Search Results1-6 of  6

  • AIHARA Yasuki ID: 9000002472154

    Department of Nuclear Engineering, Faculty of Engineering,Hokkaido University (1996 from CiNii)

    Articles in CiNii:4

    • Relation between Surface Composition of Nitride Films Produced by Sputtering and Optical Emission Intensities of Magnetron Plasma (1995)
    • Preparation of TiN Films by Magnetron Sputtering and Diagnostics for Optical Emission of Magnetron Plasma (1995)
    • Evaluation of Hydrogen Absorption and Desorption for Ti-6Al-4V Alloy with Low Activation Property as a Vacuum Vessel Material (1996)
  • AIHARA Yasuki ID: 9000017491851

    Articles in CiNii:4

    • Effect of Oxidation by Ultraviolet & Ozone and Subsequent Nitridation by Electron Cyclotron Plasma on Gate Portion of GaAs-FETs (2005)
    • Degradation mechanism and improvement of reliability of high frequency devices under high electric field and high humidity condition (2011)
    • A 76GHz High Performance Subharmonic Mixer MMIC Using Low 1/f Noise Diodes for Automotive Radars (2004)
  • AIHARA Yasuki ID: 9000021466365

    Department of Nuclear Engineering, Hokkaido University (1995 from CiNii)

    Articles in CiNii:1

    • サマリー・アブストラクト (1995)
  • AIHARA Yasuki ID: 9000107333749

    High Frequency and Optoelectronic Devices Works, Mitsubishi Electric Co., Ltd. (2006 from CiNii)

    Articles in CiNii:1

    • Effect of Oxidation using Ultraviolet Light and Ozone and Subsequent Nitridation using Electron Cyclotron Resonance Plasma on Gate Portion of GaAs Field-Effect Transistors (2006)
  • Aihara Yasuki ID: 9000300663006

    Mitsubishi Electric Corporation (2014 from CiNii)

    Articles in CiNii:1

    • Study of a 5.8GHz-band high efficiency rectifier with a high breakdown voltage GaAs schottky barrier diode (2014)
  • Aihara Yasuki ID: 9000311485619

    Mitsubishi Electric Corporation (2015 from CiNii)

    Articles in CiNii:1

    • C-2-1 Prototype of the 5.8 GHz-band high efficiency rectifier with low resistance and high-voltage GaAs SBD (2015)
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