Search Results1-7 of  7

  • AKUTSU Haruko ID: 9000001720136

    Microelectronics Engineering Laboratory, TOSHIBA Corporation (1996 from CiNii)

    Articles in CiNii:1

    • Anomalous Junction Leakage Behavior of Ti-SALICIDE Contacts on Ultra-Shallow Junctions (1996)
  • AKUTSU Haruko ID: 9000006459350

    TOSHIBA Corporation Semiconductor Company (2007 from CiNii)

    Articles in CiNii:3

    • Reduction in PN Junction Leakage for Ni-silicided Small Si Islands by Using Thermal Conduction Heating with Stacked Hot Plates (2006)
    • New Finding of Pt Segregation at the NiSi/Si Interface by Atom Probe (2007)
    • 10-15nm Ultrashallow Junction Formation by Flash-Lamp Annealing (2002)
  • AKUTSU Haruko ID: 9000018474201

    Department of Biological Science and Technology, Tokyo University of Science (2010 from CiNii)

    Articles in CiNii:1

    • A Rice Cytochrome P450 OsCYP84A That May Interact with the UV Tolerance Pathway (2010)
  • Akutsu Haruko ID: 9000258160832

    Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corp., 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan (2002 from CiNii)

    Articles in CiNii:1

    • 10-15 nm Ultrashallow Junction Formation by Flash-Lamp Annealing. (2002)
  • Akutsu Haruko ID: 9000347216580

    Semiconductor & Storage Products Company, Toshiba Corporation (2015 from CiNii)

    Articles in CiNii:1

    • Comparison of matix effect of dopant in Sputtered Neutral Mass Spectrometry with Secondary Ion Mass Spectrometry (2015)
  • Akutsu Haruko ID: 9000391950325

    Dept. of Biol. Sci. and Technol., Tokyo Univ. of Sci. (2008 from CiNii)

    Articles in CiNii:1

    • Functional Analysis of Rice Cytochrome P450 Gene <I>OsCYP10</I> (2008)
  • Akutsu Haruko ID: 9000401706020

    Articles in CiNii:1

    • 2002-04-30 (2002)
Page Top