Search Results1-15 of  15

  • Andoh Nobuyuki ID: 9000025042102

    Articles in CiNii:1

    • Activation of implanted boron atoms in silicon wafers by infrared semiconductor laser annealing using carbon films as optical absorption layers (2007)
  • ANDOH Nobuyuki ID: 9000001479817

    Tokyo University of Agriculture and Technology (2007 from CiNii)

    Articles in CiNii:2

    • Activation Behavior of Boron and Phosphorus Atoms Implanted in Polycrystalline Silicon Films by Heat Treatment at 250℃ (2005)
    • Infrared Semiconductor Laser Crystallization of Silicon Thin Films Using Diamond-Like Carbon as Photoabsorption Layer (2007)
  • ANDOH Nobuyuki ID: 9000004754930

    Tokyo University of Agriculture and Technology (2006 from CiNii)

    Articles in CiNii:10

    • Crystallization of Silicon Thin Films by Electrical Current Induced Joule Heating Method (2002)
    • Activation of dopant atoms doped to polycrystalline silicon by ion doping method (2003)
    • Reduction of Defect States and Improvement of SiO_2/Si Interface by High Pressure H_2O Vapor Treatment (2001)
  • ANDOH Nobuyuki ID: 9000005909702

    Tokyo University of Agriculture and Technology (2003 from CiNii)

    Articles in CiNii:3

    • Application of Rapid Joule Heating Method to Fabrication of Polycrystalline Silicon Thin Film Transistors (2003)
    • Rapid Joule Heating of Metal Films Used to Fabricate Polycrystalline Silicon Thin Film Transistors (2002)
    • Crystalline Grain Growth in the Lateral Direction for Silicon Thin Films by Electrical Current-Induced Joule Heating (2002)
  • Andoh Nobuyuki ID: 9000014590795

    Tokyo University of Agriculture and Technology (2004 from CiNii)

    Articles in CiNii:1

    • 25aD12 Application for crystallization of silicon thin films to nano-technology(NCCG-34) (2004)
  • Andoh Nobuyuki ID: 9000024958076

    Articles in CiNii:1

    • Pulsed Laser Annealing of Thin Silicon Films (2006)
  • Andoh Nobuyuki ID: 9000055392626

    Articles in CiNii:1

    • Activation of Silicon Implanted with Phosphorus Atoms by Infrared Semiconductor Laser Annealing (2007)
  • Andoh Nobuyuki ID: 9000258163591

    Tokyo University of Agriculture and Technology, 2-24-16, Nakacho, Koganei, Tokyo 184-8588, Japan (2002 from CiNii)

    Articles in CiNii:1

    • Rapid Joule Heating of Metal Films Used to Fabricate Polycrystalline Silicon Thin Film Transistors. (2002)
  • Andoh Nobuyuki ID: 9000258179482

    Tokyo University of Agriculture and Technology (2005 from CiNii)

    Articles in CiNii:1

    • Activation Behavior of Boron and Phosphorus Atoms Implanted in Polycrystalline Silicon Films by Heat Treatment at 250.DEG.C. (2005)
  • Andoh Nobuyuki ID: 9000283193903

    Tokyo University of Agriculture and Technology (2005 from CiNii)

    Articles in CiNii:1

    • Heating Layer of Diamond-Like Carbon Films Used for Crystallization of Silicon Films (2005)
  • Andoh Nobuyuki ID: 9000401709337

    Articles in CiNii:1

    • Crystalline Grain Growth in the Lateral Direction for Silicon Thin Films by Electrical Current-Induced Joule Heating (2002)
  • Andoh Nobuyuki ID: 9000401713700

    Articles in CiNii:1

    • Rapid Joule Heating of Metal Films Used to Fabricate Polycrystalline Silicon Thin Film Transistors (2002)
  • Andoh Nobuyuki ID: 9000401718833

    Articles in CiNii:1

    • Application of Rapid Joule Heating Method to Fabrication of Polycrystalline Silicon Thin Film Transistors (2003)
  • Andoh Nobuyuki ID: 9000401734523

    Articles in CiNii:1

    • Activation Behavior of Boron and Phosphorus Atoms Implanted in Polycrystalline Silicon Films by Heat Treatment at 250°C (2005)
  • Andoh Nobuyuki ID: 9000401765977

    Articles in CiNii:1

    • Activation of Implanted Boron Atoms in Silicon Wafers by Infrared Semiconductor Laser Annealing Using Carbon Films as Optical Absorption Layers (2007)
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