Search Results1-20 of  209

  • ARAI Shigehisa ID: 9000399576814

    Articles in CiNii:1

    • Continuous wave operation up to 90℃ of npn-AlGaInAs/InP transistor laser (光エレクトロニクス) (2018)
  • ARAI Shigehisa ID: 9000399578288

    Articles in CiNii:1

    • Continuous wave operation up to 90℃ of npn-AlGaInAs/InP transistor laser (レーザ・量子エレクトロニクス) (2018)
  • ARAI SHIGEHISA ID: 9000402088137

    Articles in CiNii:1

    • Loss Reduction of Si Wire Waveguide Fabricated by Edge-Enhancement Writing for Electron Beam Lithography and Reactive Ion Etching Using Double Layered Resist Mask with C60 (2009)
  • ARAI SHIGEHISA ID: 9000402090606

    Articles in CiNii:1

    • Spectral characteristics of a 1.3-µm npn-AlGaInAs/InP transistor laser under various operating conditions (2014)
  • ARAI SHIGEHISA ID: 9000402091708

    Articles in CiNii:1

    • Crystalline/Amorphous Si Integrated Optical Couplers for 2D/3D Interconnection (2016)
  • ARAI SHIGEHISA ID: 9000402092386

    Articles in CiNii:1

    • Self-Holding Magneto-Optical Switch Integrated with Thin-Film Magnet (2018)
  • ARAI SHIGEHISA ID: 9000403818429

    Articles in CiNii:1

    • The Base Layer Design of Long Wavelength Laser Transistor (2008)
  • ARAI SHIGEHISA ID: 9000403818995

    Articles in CiNii:1

    • 光生成キャリア変調による光信号からサブテラヘルツ信号への直接変換速度特性 (2009)
  • ARAI SHIGEHISA ID: 9000403821274

    Articles in CiNii:1

    • Low-loss GaInAsP wire waveguide for optical interconnection (2011)
  • ARAI SHIGEHISA ID: 9000403826530

    Articles in CiNii:1

    • Dynamic Behavior of 1.3-μm npn-AlGaInAs/InP Transistor Lasers under Collector-Base Voltage Loss-modulation (2015)
  • ARAI SHIGEHISA ID: 9000403827067

    Articles in CiNii:1

    • Dynamic Behavior of 1.3-μm npn-AlGaInAs/InP Transistor Lasers under Collector-Base Voltage Modulation (2015)
  • ARAI SHIGEHISA ID: 9000403827081

    Articles in CiNii:1

    • Launch position dependence of transmission characteristics of quantum dots laser through 1.3-μm optimized multi-mode fibers (2015)
  • ARAI SHIGEHISA ID: 9000403829268

    Articles in CiNii:1

    • Design of double taper interlayer coupler for multilayered photonic integrated circuits (2016)
  • ARAI SHIGEHISA ID: 9000403831873

    Articles in CiNii:1

    • Lasing Wavelength Dependence on Injection Current of GaInAsP/InP Membrane Distributed Reflector Laser with Thin-BCB Layer (2018)
  • ARAI SHIGEHISA ID: 9000403832157

    Articles in CiNii:1

    • Gas Species Comparison of Fast Atom Beam Irradiation to Photoluminescence Properties of GaInAs/InP layers for Surface Activated Bonding (2018)
  • ARAI Shigehisa ID: 1000030151137

    Dept. of Electrical and Electronic Engineering, Tokyo Institute of Technology:Quantum Nanoelectronics Research Center, Tokyo Institute of Technology (2015 from CiNii)

    Articles in CiNii:164

    • オプトエレクトロニクス・光デバイス (1995)
    • 第16回インジウム・リンと関連材料国際会議のトピックス (2004)
    • Anisotropic Gain in GaInAsP/InP Strained Quantum-Wire Lasers (2005)
  • ARAI Shigehisa ID: 9000004872457

    Quantum Nanoelectronics Research Center, Tokyo Institute of Technology (2007 from CiNii)

    Articles in CiNii:20

    • Estimation of Sidewall Nonradiative Recombination in GaInAsP/InP Wire Structures Fabricated by Low Energy Electron-Cyclotron-Resonance Reactive-Ion-Beam-Etching (1998)
    • Room Temperature-Copntinuous Wave Operation of GaInAsP/InP Multiple-Quantum-Wire Lasers by Dry Etching and Regrowth Method (2003)
    • Low-Threshold Current Density GaInAsP/InP Quantum-Wire Distributed Feedback Lasers Fabricated by Low-Damage Processes (2007)
  • ARAI Shigehisa ID: 9000005533388

    Department of Physical Electronics, Tokyo Institute of Technology (1981 from CiNii)

    Articles in CiNii:3

    • The Temperature Dependence of the Efficiency and Threshold Current of In_<1-x>Ga_xAs_yP__<1-y> Lasers Related to Intervalence Band Absorption (1980)
    • Room Temperature CW Operation of GaInAsP/InP DH Laser Emitting at 1.51 μm (1979)
    • Spontaneous Recombination, Gain and Refractive Index Variation for 1.6 μm Wavelength InGaAsP/InP Lasers (1981)
  • ARAI Shigehisa ID: 9000005534138

    Department of Physical Electronics, Tokyo Institute of Technology (1980 from CiNii)

    Articles in CiNii:4

    • 1.6 μm Wavelength Buried Heterostructure GaInAsP/InP Lasers (1980)
    • Conditions of LPE Growth for Lattice Matched GaInAsP/InP DH Lasers with(100)Substrate in the Range of 1.2-1.5 μm (1978)
    • Low Threshold Current Density (100) GaInAsP/InP Double-Heterostructure Lasers for Wavelength 1.3 μm (1979)
  • ARAI Shigehisa ID: 9000005548025

    Research Center for Quantum Effect Electronics, Tokyo Institute of Technology (2002 from CiNii)

    Articles in CiNii:13

    • Deeply Etched Semiconductor/Benzocyclobutene Distributed Bragg Reflector Laser Combined with Multiple Cavities for 1.5-μm-Wavelength Single-Mode Operation (2001)
    • Stripe Direction Dependence of Mesa Angle Formed on(100)InP by Selective Etching using HCl Solution (1996)
    • Proposal of Semiconductor Directional-Coupler-Type All-Optical Switch with Tapered-Waveguide Structures (1997)
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