Search Results1-12 of  12

  • ARISUMI Osamu ID: 9000004970382

    Process & Manufacturing Engineering Center, Toshiba Corp., Semiconductor Company (2002 from CiNii)

    Articles in CiNii:1

    • New PZT Crystallization Technique by Using Flash Lamp for FeRAM Devices (2002)
  • ARISUMI Osamu ID: 9000005903634

    Process & Manufacturing Engineering Center, Semiconductor Company, Toshiba Corp. (2002 from CiNii)

    Articles in CiNii:5

    • Analysis of Si-Ge Source Structure in 0.15 μm SOI MOSFETs Using Two-Dimensional Device Simulation (1996)
    • Novel PZT Crystallization Technique by Using Flash Lamp for FeRAM Embedded LSIs and 1Tr FeRAM Devices (2001)
    • Analysis of Si-Ge Source Structure in 0.15μm SOI MOSFETs Using Two-Dimensional Device Simulation (1995)
  • ARISUMI Osamu ID: 9000107336328

    FeRAM Development Alliance, Semiconductor Company, Toshiba Corp. (2004 from CiNii)

    Articles in CiNii:1

    • Lead Content Control in (Pb, La) (Zr, Ti)O_3 Films Using Ar/O_2 Sequential Rapid Thermal Process (2004)
  • ARISUMI Osamu ID: 9000107383047

    ULSI Research Laboratories, R&D Center, Toshiba Corporation (1996 from CiNii)

    Articles in CiNii:1

    • Formation of SiGe Source/Drain Using Ge Implantation for Floating-Body Effect Resistant SOI MOSFETs (1996)
  • Arisumi Osamu ID: 9000258131803

    ULSI Research Laboratories, R&D Center, Toshiba Corporation, 1 Komukai Toshiba–cho, Saiwai–ku, Kawasaki 210, Japan (1996 from CiNii)

    Articles in CiNii:1

    • Formation of SiGe Source/Drain Using Ge Implantation for Floating-Body Effect Resistant SOI MOSFETs. (1996)
  • Arisumi Osamu ID: 9000258131979

    ULSI Research Laboratories, R & D Center, Toshiba Corporation, 1 Komukai Toshiba–cho, Saiwai–ku, Kawasaki, 210 Japan (1996 from CiNii)

    Articles in CiNii:1

    • Analysis of Si-Ge Source Structure in 0.15 .MU.m SOI MOSFETs Using Two-Dimensional Device Simulation. (1996)
  • Arisumi Osamu ID: 9000258151994

    Microelectronics Engineering Laboratory, Semiconductor Company, Toshiba Corporation,<BR> 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan (2000 from CiNii)

    Articles in CiNii:1

    • Ferroelectric Properties of Pb(Zi, Ti)O3 Capacitor with Thin SrRuO3 Films within Both Electrodes. (2000)
  • Arisumi Osamu ID: 9000258161001

    Process & Manufacturing Engineering Center, Semiconductor Company, Toshiba Corp., 8, Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan (2002 from CiNii)

    Articles in CiNii:1

    • Novel Pb(Ti,Zr)O3(PZT) Crystallization Technique Using Flash Lamp for Ferroelectric RAM (FeRAM) Embedded LSIs and One Transistor Type FeRAM Devices. (2002)
  • Arisumi Osamu ID: 9000401660258

    Articles in CiNii:1

    • Formation of SiGe Source/Drain Using Ge Implantation for Floating-Body Effect Resistant SOI MOSFETs (1996)
  • Arisumi Osamu ID: 9000401660304

    Articles in CiNii:1

    • 1996-02-28 (1996)
  • Arisumi Osamu ID: 9000401688320

    Articles in CiNii:1

    • Ferroelectric Properties of Pb(Zi, Ti)O3Capacitor with Thin SrRuO3Films within Both Electrodes (2000)
  • Arisumi Osamu ID: 9000401706341

    Articles in CiNii:1

    • Novel Pb(Ti, Zr)O3(PZT) Crystallization Technique Using Flash Lamp for Ferroelectric RAM (FeRAM) Embedded LSIs and One Transistor Type FeRAM Devices (2002)
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