Search Results1-20 of  70

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  • Ahmet Parhat ID: 9000018691285

    Articles in CiNii:1

    • Rare earth oxide capping effect on La2O3 gate dielectrics for equivalent oxide thickness scaling toward 0.5nm (Special issue: Dielectric thin films for future electron devices: science and technology) (2011)
  • Ahmet Parhat ID: 9000024933132

    Articles in CiNii:1

    • Characteristics of ultrathin lanthanum oxide films on germanium substrate: comparison with those on silicon substrate (2007)
  • Ahmet Parhat ID: 9000025061424

    Articles in CiNii:1

    • Crystal structures of Pt-Ru alloy Schottky contacts on ZnO by combinatorial ion beam deposition (2007)
  • Ahmet Parhat ID: 9000025085520

    Articles in CiNii:1

    • Combinatorial Fabrication and Characterization of Ternary La2O3-Mn2O3-Co3O4 Composition Spreads (2005)
  • Ahmet Parhat ID: 9000403864359

    Articles in CiNii:1

    • Structural advantages of rectangular-like channel cross-section on electrical characteristics of silicon nanowire field-effect transistors (2011)
  • Ahmet Parhat ID: 9000403864837

    Articles in CiNii:1

    • Effects of corner angle of trapezoidal and triangular channel cross-sections on electrical performance of silicon nanowire field-effect transistors with semi gate-around structure (2011)
  • AHMET P. ID: 9000006001581

    Tokyo Institute of Technology (2006 from CiNii)

    Articles in CiNii:3

    • Wide Controllability of Flatband Voltage in La_2O_3 Gate Stack Structures : Remarkable Advantages of La_2O_3 over HfO_2 (2006)
    • Universal theory of workfunctions at metal/Hf-based high-k dielectrics interfaces : Guiding principles for gate metal selection (2006)
    • Influences of Annealing Conditions on Flatband Voltage Properties Using Continuously Workfunction-Tuned Metal Electrodes (2006)
  • AHMET PARHAT ID: 9000403817950

    Articles in CiNii:1

    • Control of Flat Band Voltage by Partial Incorporation of La2O3 or Sc2O3 into MfO2 in Metal/MfO2/SiO2/Si MOS Capacitors (2007)
  • AHMET PARHAT ID: 9000403817951

    Articles in CiNii:1

    • Control of Flat Band Voltage by Partial Incorporation of La2O3 or Sc2O3 into MfO2 in Metal/MfO2/SiO2/Si MOS Capacitors (2007)
  • AHMET Parhat ID: 9000001104828

    National Institute for Material Science (2003 from CiNii)

    Articles in CiNii:1

    • Influence of Internal Electric Field on the Recombination Dynamics of Localized Excitons in an InGaN Double-Quantum-Well Laser Diode Wafer Operated at 450nm (2003)
  • AHMET Parhat ID: 9000001623162

    Frontier Research Center, Tokyo Tech. (2012 from CiNii)

    Articles in CiNii:9

    • Combinatorial Characterization of Electrical Properties On Hf-based oxides : Materials selection rule and interface control by thermodynamics (2005)
    • Feasibility of Si Interfacial Layer Insertion for La_2O_3/Ge MOS Device (2008)
    • 次世代ゲート絶縁膜の課題とコンビナトリアル手法による材料探索 (2003)
  • AHMET Parhat ID: 9000001790897

    Frontier Collaborative Research Center, Tokyo Institute of Technology (2006 from CiNii)

    Articles in CiNii:1

    • Fabrication of Optically Active Er^<3+>-Doped Bi_2O_3-SiO_2 Glass Thin Films by Pulsed Laser Deposition (2006)
  • AHMET Parhat ID: 9000003320965

    National Institute for Materials Science (2002 from CiNii)

    Articles in CiNii:9

    • Crystalline Electric Field and Metamagnetic Transition of PrCu2 (1996)
    • Crystalline Electric Field and Metamagnetic Transition of PrCu_2 (1996)
    • Metamagnetic Transition in PrCu_2 Studied by the de Haas-van Alphen Effect (1995)
  • AHMET Parhat ID: 9000005915042

    Articles in CiNii:1

    • Epitaxial Growth of the Wurtzite (1120) AIN Thin Films on Si(100) with MnS Buffer Layer (2001)
  • AHMET Parhat ID: 9000005917209

    COMET in National Institute for Research in Inorganic Materials (2001 from CiNii)

    Articles in CiNii:1

    • Molecular Beam Epitaxy of Wurtzite GaN-Based Magnetic Alloy Semiconductors (2001)
  • AHMET Parhat ID: 9000016498632

    Frontier Collaborative Research Center, Tokyo Institute of Technology (2007 from CiNii)

    Articles in CiNii:1

    • Parasitic Effects in Multi-Gate MOSFETs (2007)
  • AHMET Parhat ID: 9000107345056

    National Institute for Materials Science (2005 from CiNii)

    Articles in CiNii:1

    • Effects of Single-Crystalline GaN Target on GaN Thin Films in Pulsed Laser Deposition Process (2005)
  • AHMET Parhat ID: 9000107352342

    COMET-NIMS, National Institute for Materials Science (2004 from CiNii)

    Articles in CiNii:1

    • Critical Roles of Decomposition-Shielding Layer Deposited at Low Temperature Governing the Structural and Photoluminescence Properties of Cubic GaN Epilayers Grown on (001) GaAs by Metalorganic Vapor Phase Epitaxy (2004)
  • AHMET Parhat ID: 9000107375131

    Articles in CiNii:1

    • High Temperature Rapid Thermal Annealing of Rare-Earth Oxides Dielectrics for Highly Scaled Gate Stack of EOT=0.5nm (2010)
  • AHMET Parhat ID: 9000107375584

    Articles in CiNii:1

    • An Analysis of Effective Carrier Mobility of Silicon Nanowire FET (2010)
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