Search Results1-20 of  306

  • AKASAKI Isamu ID: 9000404506985

    名城大学教授/名古屋大学名誉教授・特別教授 (2011 from CiNii)

    Articles in CiNii:1

    • 20190927 (2011)
  • AKASAKI Isamu ID: 9000404509092

    Graduate School of Science and Technology, Meijo University, (2004 from CiNii)

    Articles in CiNii:1

    • Creation of desired blue light-emitting devices:−My personal history of nitride research− (2004)
  • Akasaki Isamu ID: 9000007231831

    Articles in CiNii:1

    • An interview with Professor Isamu Akasaki of Meijo University,pioneer in the field of Semiconducting GaN(qallium nitride)and related devices (1998)
  • Akasaki Isamu ID: 9000025014073

    Articles in CiNii:1

    • Breakthroughs in Improving Crystal Quality of GaN and Invention of the p-n Junction Blue-Light-Emitting Diode (2006)
  • AKASAKI Isamu ID: 9000000793080

    Meijo University (2002 from CiNii)

    Articles in CiNii:1

    • 2nd JSAP Outstanding Achievement Award : Research Accomplishments (2002)
  • AKASAKI Isamu ID: 9000001716420

    Department of Electrical and Electronic Engineering, Meijo University (1997 from CiNii)

    Articles in CiNii:1

    • Progress in Crystal Growth and Conductivity Control of Group III Nitride Semiconductors : Seeking Blue Emission (1997)
  • AKASAKI Isamu ID: 9000001722188

    Department of Electrical and Electronic Engineering, Meijo University (1995 from CiNii)

    Articles in CiNii:1

    • Fabrication and Properties of GaN-Based Quantum Well Structure for Short Wavelength Light Emitter (1995)
  • AKASAKI Isamu ID: 9000002165187

    High Tech Research Center, Meijo University (1999 from CiNii)

    Articles in CiNii:1

    • Piezoelectric Polarization Effects in GaInN/GaN Heterostructures and Some Consequences for Device Design (1999)
  • AKASAKI Isamu ID: 9000003243249

    Matsushita Research Institute Tokyo, Inc. (1966 from CiNii)

    Articles in CiNii:1

    • Infrared Absorption in n-Type GaAs (1966)
  • AKASAKI Isamu ID: 9000003341455

    Matsushita Research Institute Tokyo, Inc, (1965 from CiNii)

    Articles in CiNii:1

    • Temperature Dependence of Electron Mobility in GaAs (1965)
  • AKASAKI Isamu ID: 9000004820999

    Faculty of Science and Technology, Meijo University (2011 from CiNii)

    Articles in CiNii:45

    • ZrB_2 Substrate for Nitride Semiconductors (2003)
    • Study on the Seeded Growth of AlN Bulk Crystals by Sublimation (2004)
    • Present and Future Nitride-Based Devices (2001)
  • AKASAKI Isamu ID: 9000045939450

    Department of Electrical and Electronic Engineering, Meijo University (1997 from CiNii)

    Articles in CiNii:1

    • Optical Properties of Strained AlGaN and GaInN on GaN (1997)
  • AKASAKI Isamu ID: 9000046254755

    Department of Electrical and Electronic Engineering, Meijo University (2000 from CiNii)

    Articles in CiNii:1

    • Solar-Blind UV Photodetectors Based on GaN/AlGaN p-i-n Photodiodes (2000)
  • AKASAKI Isamu ID: 9000107308425

    Articles in CiNii:1

    • Theoretical Study of Orientation Dependence of Piezoelectric Effects in Wurtzite Strained GaInN/GaN Heterostructures and Quantum Wells (2000)
  • AKASAKI Isamu ID: 9000107313630

    Faculty of Science and Technology, 21st-Century COE Program "Nano-factory", Meijo University (2007 from CiNii)

    Articles in CiNii:1

    • Dislocations in AlN Epilayers Grown on Sapphire Substrate by High-Temperature Metal-Organic Vapor Phase Epitaxy (2007)
  • AKASAKI Isamu ID: 9000107338119

    Department of Materials Science and Engineering, Meijo University (2011 from CiNii)

    Articles in CiNii:1

    • Microstructures of GaInN/GaInN Superlattices on GaN Substrates (2011)
  • AKASAKI Isamu ID: 9000107338231

    Faculty of Science and Technology, Meijo University (2011 from CiNii)

    Articles in CiNii:1

    • GaInN-Based Solar Cells Using Strained-Layer GaInN/GaInN Superlattice Active Layer on a Freestanding GaN Substrate (2011)
  • AKASAKI Isamu ID: 9000107341737

    Faculty of Science and Technology, 21st Century-COE "Nano-Factory", Meijo University (2005 from CiNii)

    Articles in CiNii:1

    • Impact of H_2-Preannealing of the Sapphire Substrate on the Crystallinity of Low-Temperature-Deposited AlN Buffer Layer (2005)
  • AKASAKI Isamu ID: 9000107347542

    Faculty of Science and Technology, High-Tech Research Center (2004 from CiNii)

    Articles in CiNii:1

    • 350.9nm UV Laser Diode Grown on Low-Dislocation-Density AlGaN (2004)
  • AKASAKI Isamu ID: 9000107348608

    Faculty of Science and Technology, Meijo University (2003 from CiNii)

    Articles in CiNii:1

    • High-Power UV-Light-Emitting Diode on Sapphire (2003)
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