Search Results1-20 of  301

  • Akasaki Isamu ID: 9000007231831

    Articles in CiNii:1

    • An interview with Professor Isamu Akasaki of Meijo University,pioneer in the field of Semiconducting GaN(qallium nitride)and related devices (1998)
  • Akasaki Isamu ID: 9000025014073

    Articles in CiNii:1

    • Breakthroughs in Improving Crystal Quality of GaN and Invention of the p-n Junction Blue-Light-Emitting Diode (2006)
  • AKASAKI Isamu ID: 9000003243249

    Matsushita Research Institute Tokyo, Inc. (1966 from CiNii)

    Articles in CiNii:1

    • Infrared Absorption in n-Type GaAs (1966)
  • AKASAKI Isamu ID: 9000003341455

    Matsushita Research Institute Tokyo, Inc, (1965 from CiNii)

    Articles in CiNii:1

    • Temperature Dependence of Electron Mobility in GaAs (1965)
  • AKASAKI Isamu ID: 9000004820999

    Faculty of Science and Technology, Meijo University (2011 from CiNii)

    Articles in CiNii:46

    • ZrB_2 Substrate for Nitride Semiconductors (2003)
    • Study on the Seeded Growth of AlN Bulk Crystals by Sublimation (2004)
    • Present and Future Nitride-Based Devices (2001)
  • AKASAKI Isamu ID: 9000004844326

    Department of Materials Science and Engineering, Meijo University (2011 from CiNii)

    Articles in CiNii:9

    • 2nd JSAP Outstanding Achievement Award : Research Accomplishments (2002)
    • Progress in Crystal Growth and Conductivity Control of Group III Nitride Semiconductors : Seeking Blue Emission (1997)
    • Fabrication and Properties of GaN-Based Quantum Well Structure for Short Wavelength Light Emitter (1995)
  • AKASAKI Isamu ID: 9000107308425

    Articles in CiNii:1

    • Theoretical Study of Orientation Dependence of Piezoelectric Effects in Wurtzite Strained GaInN/GaN Heterostructures and Quantum Wells (2000)
  • AKASAKI Isamu ID: 9000107338231

    Faculty of Science and Technology, Meijo University (2011 from CiNii)

    Articles in CiNii:1

    • GaInN-Based Solar Cells Using Strained-Layer GaInN/GaInN Superlattice Active Layer on a Freestanding GaN Substrate (2011)
  • AKASAKI Isamu ID: 9000107341737

    Faculty of Science and Technology, 21st Century-COE "Nano-Factory", Meijo University (2005 from CiNii)

    Articles in CiNii:1

    • Impact of H_2-Preannealing of the Sapphire Substrate on the Crystallinity of Low-Temperature-Deposited AlN Buffer Layer (2005)
  • AKASAKI Isamu ID: 9000107347542

    Faculty of Science and Technology, High-Tech Research Center (2004 from CiNii)

    Articles in CiNii:1

    • 350.9nm UV Laser Diode Grown on Low-Dislocation-Density AlGaN (2004)
  • AKASAKI Isamu ID: 9000107348608

    Faculty of Science and Technology, Meijo University (2003 from CiNii)

    Articles in CiNii:1

    • High-Power UV-Light-Emitting Diode on Sapphire (2003)
  • AKASAKI Isamu ID: 9000107361230

    Faculty of Science and Technology, Meijo University (2010 from CiNii)

    Articles in CiNii:1

    • Realization of Nitride-Based Solar Cell on Freestanding GaN Substrate (2010)
  • AKASAKI Isamu ID: 9000107366139

    Faculty of Science and Technology, Meijo University (2012 from CiNii)

    Articles in CiNii:1

    • Correlation between Device Performance and Defects in GalnN-Based Solar Cells (2012)
  • AKASAKI Isamu ID: 9000107374328

    Articles in CiNii:1

    • Crystal Growth and Conductivity Control of Group III Nitride Semiconductors and Their Application to Short Wavelengh Light Emitters (1997)
  • AKASAKI Isamu ID: 9000107376245

    Faculty of Science and Technology, Meijo University (2011 from CiNii)

    Articles in CiNii:1

    • AlGaN-Based Deep Ultraviolet Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates (2011)
  • AKASAKI Isamu ID: 9000107379013

    Faculty of Science and Technology, Meijo University (2011 from CiNii)

    Articles in CiNii:1

    • Freestanding Highly Crystalline Single Crystal AlN Substrates Grown by a Novel Closed Sublimation Method (2011)
  • AKASAKI Isamu ID: 9000411039991

    Faculty of Science and Technology, Meijo University|Akasaki Research Center, Nagoya University (2018 from CiNii)

    Articles in CiNii:1

    • Status and Prospects of GaN-Based Blue Lasers and Photo Detectors (2018)
  • Akasaki Isamu ID: 9000003240161

    Department of Electronics, Faculty of Engineering, Nagoya University (1962 from CiNii)

    Articles in CiNii:1

    • Etch Patterns in Germanium (1962)
  • Akasaki Isamu ID: 9000003240164

    Department of Electronics, Faculty of Engineering, Nagoya University (1962 from CiNii)

    Articles in CiNii:1

    • On the Structural Properties of Vapor-Deposited Germanium Layers (1962)
  • Akasaki Isamu ID: 9000047210487

    Articles in CiNii:1

    • Thermodynamic Aspects of Growth of AlGaN by High-Temperature Metal Organic Vapor Phase Epitaxy (2006)
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