Search Results1-20 of  306

  • AKASAKI Isamu ID: 9000404506985

    名城大学教授／名古屋大学名誉教授・特別教授 （2011 from CiNii）

    Articles in CiNii:1

    • 20190927 （2011）
  • AKASAKI Isamu ID: 9000404509092

    Graduate School of Science and Technology, Meijo University, （2004 from CiNii）

    Articles in CiNii:1

    • Creation of desired blue light-emitting devices:−My personal history of nitride research− （2004）
  • Akasaki Isamu ID: 9000007231831

    Articles in CiNii:1

    • An interview with Professor Isamu Akasaki of Meijo University,pioneer in the field of Semiconducting GaN(qallium nitride)and related devices （1998）
  • Akasaki Isamu ID: 9000025014073

    Articles in CiNii:1

    • Breakthroughs in Improving Crystal Quality of GaN and Invention of the p-n Junction Blue-Light-Emitting Diode （2006）
  • AKASAKI Isamu ID: 9000000793080

    Meijo University （2002 from CiNii）

    Articles in CiNii:1

    • 2nd JSAP Outstanding Achievement Award : Research Accomplishments （2002）
  • AKASAKI Isamu ID: 9000001716420

    Department of Electrical and Electronic Engineering, Meijo University （1997 from CiNii）

    Articles in CiNii:1

    • Progress in Crystal Growth and Conductivity Control of Group III Nitride Semiconductors : Seeking Blue Emission （1997）
  • AKASAKI Isamu ID: 9000001722188

    Department of Electrical and Electronic Engineering, Meijo University （1995 from CiNii）

    Articles in CiNii:1

    • Fabrication and Properties of GaN-Based Quantum Well Structure for Short Wavelength Light Emitter （1995）
  • AKASAKI Isamu ID: 9000002165187

    High Tech Research Center, Meijo University （1999 from CiNii）

    Articles in CiNii:1

    • Piezoelectric Polarization Effects in GaInN/GaN Heterostructures and Some Consequences for Device Design （1999）
  • AKASAKI Isamu ID: 9000003243249

    Matsushita Research Institute Tokyo, Inc. （1966 from CiNii）

    Articles in CiNii:1

    • Infrared Absorption in n-Type GaAs （1966）
  • AKASAKI Isamu ID: 9000003341455

    Matsushita Research Institute Tokyo, Inc, （1965 from CiNii）

    Articles in CiNii:1

    • Temperature Dependence of Electron Mobility in GaAs （1965）
  • AKASAKI Isamu ID: 9000004820999

    Faculty of Science and Technology, Meijo University （2011 from CiNii）

    Articles in CiNii:45

    • ZrB_2 Substrate for Nitride Semiconductors （2003）
    • Study on the Seeded Growth of AlN Bulk Crystals by Sublimation （2004）
    • Present and Future Nitride-Based Devices （2001）
  • AKASAKI Isamu ID: 9000045939450

    Department of Electrical and Electronic Engineering, Meijo University （1997 from CiNii）

    Articles in CiNii:1

    • Optical Properties of Strained AlGaN and GaInN on GaN （1997）
  • AKASAKI Isamu ID: 9000046254755

    Department of Electrical and Electronic Engineering, Meijo University （2000 from CiNii）

    Articles in CiNii:1

    • Solar-Blind UV Photodetectors Based on GaN/AlGaN p-i-n Photodiodes （2000）
  • AKASAKI Isamu ID: 9000107308425

    Articles in CiNii:1

    • Theoretical Study of Orientation Dependence of Piezoelectric Effects in Wurtzite Strained GaInN/GaN Heterostructures and Quantum Wells （2000）
  • AKASAKI Isamu ID: 9000107313630

    Faculty of Science and Technology, 21st-Century COE Program "Nano-factory", Meijo University （2007 from CiNii）

    Articles in CiNii:1

    • Dislocations in AlN Epilayers Grown on Sapphire Substrate by High-Temperature Metal-Organic Vapor Phase Epitaxy （2007）
  • AKASAKI Isamu ID: 9000107338119

    Department of Materials Science and Engineering, Meijo University （2011 from CiNii）

    Articles in CiNii:1

    • Microstructures of GaInN/GaInN Superlattices on GaN Substrates （2011）
  • AKASAKI Isamu ID: 9000107338231

    Faculty of Science and Technology, Meijo University （2011 from CiNii）

    Articles in CiNii:1

    • GaInN-Based Solar Cells Using Strained-Layer GaInN/GaInN Superlattice Active Layer on a Freestanding GaN Substrate （2011）
  • AKASAKI Isamu ID: 9000107341737

    Faculty of Science and Technology, 21st Century-COE "Nano-Factory", Meijo University （2005 from CiNii）

    Articles in CiNii:1

    • Impact of H_2-Preannealing of the Sapphire Substrate on the Crystallinity of Low-Temperature-Deposited AlN Buffer Layer （2005）
  • AKASAKI Isamu ID: 9000107347542

    Faculty of Science and Technology, High-Tech Research Center （2004 from CiNii）

    Articles in CiNii:1

    • 350.9nm UV Laser Diode Grown on Low-Dislocation-Density AlGaN （2004）
  • AKASAKI Isamu ID: 9000107348608

    Faculty of Science and Technology, Meijo University （2003 from CiNii）

    Articles in CiNii:1

    • High-Power UV-Light-Emitting Diode on Sapphire （2003）
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