Search Results81-100 of  305

  • Akasaki Isamu ID: 9000258126019

    Department of Electrical and Electronic Engineering, Meijo University, 1–501 Shiogamaguchi, Tempaku–ku, Nagoya 468, Japan (1995 from CiNii)

    Articles in CiNii:1

    • Direct Patterning of the Current Confinement Structure for p-Type Column-III Nitrides by Low-Energy Electron Beam Irradiation Treatment. (1995)
  • Akasaki Isamu ID: 9000258136474

    Department of Electrical and Electronic Engineering, Meijo University, 1–501 Shiogamaguchi, Tempaku–ku, Nagoya 468, Japan (1997 from CiNii)

    Articles in CiNii:1

    • Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells. (1997)
  • Akasaki Isamu ID: 9000258138031

    Department of Electrical and Electronic Engineering, Meijo University, 1–501 Shiogamaguchi, Tempaku–ku, Nagoya 468, Japan (1997 from CiNii)

    Articles in CiNii:1

    • Crystal Growth and Conductivity Control of Group III Nitride Semiconductors and Their Application to Short Wavelength Light Emitters. (1997)
  • Akasaki Isamu ID: 9000258138891

    Department of Electrical and Electronic Engineering, Meijo University, 1–501 Shiogamaguchi, Tempaku–ku, Nagoya 468–8502, Japan (1998 from CiNii)

    Articles in CiNii:1

    • Investigation of the Leakage Current in GaN P-N Junctions. (1998)
  • Akasaki Isamu ID: 9000258140839

    Department of Electrical and Electronic Engineering, Meijo University, 1–501 Shiogamaguchi, Tempaku–ku, Nagoya 468–8502, Japan (1998 from CiNii)

    Articles in CiNii:1

    • Reduction of Etch Pit Density in Organometallic Vapor Phase Epitaxy-Grown GaN on Sapphire by Insertion of a Low-Temperature-Deposited Buffer Layer between High-Temperature-Grown GaN. (1998)
  • Akasaki Isamu ID: 9000258141552

    Department of Electrical and Electronic Engineering, Meijo University, 1–501 Shiogamaguchi, Tempaku–ku, Nagoya 468–8502, Japan (1998 from CiNii)

    Articles in CiNii:1

    • GaN Based Laser Diode with Focused Ion Beam Etched Mirrors. (1998)
  • Akasaki Isamu ID: 9000258143543

    High–Tech Research Center, Meijo University, Shiogamaguchi, Tempaku–ku, Nagoya 468–8502, Japan (1999 from CiNii)

    Articles in CiNii:1

    • Correlation between Dislocation Density and the Macroscopic Properties of GaN Grown by Metalorganic Vapor Phase Epitaxy. (1999)
  • Akasaki Isamu ID: 9000258144279

    Department of Electrical and Electronic Engineering and High–Tech Research Center, Meijo University, 1–501 Shiogamaguchi, Tempaku–ku, Nagoya 468–8502, Japan (1999 from CiNii)

    Articles in CiNii:1

    • Optical Transitions of the Mg Acceptor in GaN. (1999)
  • Akasaki Isamu ID: 9000258146287

    High–Tech Research Center and Department of Electrical and Electronic Engineering, Meijo University, 1–501 Shiogamaguchi, Tempaku–ku, Nagoya 468–8502, Japan (1999 from CiNii)

    Articles in CiNii:1

    • Piezoelectric Stark-like Ladder in GaN/GaInN/GaN Heterostructures. (1999)
  • Akasaki Isamu ID: 9000258150199

    High-Tech Research Center, Meijo University 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan|Department of Electrical and Electronic Engineering, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan (2000 from CiNii)

    Articles in CiNii:1

    • Performance of GaN-Based Semiconductor Laser with Spectral Broadening due to Compositional Inhomogeneity in GaInN Active Layer. (2000)
  • Akasaki Isamu ID: 9000258150234

    Department of Electrical and Electronic Engineering, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan (2000 from CiNii)

    Articles in CiNii:1

    • Theoretical Study of Orientation Dependence of Piezoelectric Effects in Wurtzite Strained GaInN/GaN Heterostructures and Quantum Wells. (2000)
  • Akasaki Isamu ID: 9000258150790

    Department of Electrical and Electronic Engineering, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan|High-Tech Research Center, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan (2000 from CiNii)

    Articles in CiNii:1

    • Effect on GaN/Al0.17Ga0.83N and Al0.05Ga0.95N/Al0.17Ga0.83N Quantum Wells by Isoelectronic In-Doping during Metalorganic Vapor Phase Epitaxy. (2000)
  • Akasaki Isamu ID: 9000258151627

    High-Tech Research Center, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan|Department of Electrical and Electronic Engineering, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan (2000 from CiNii)

    Articles in CiNii:1

    • The Effect of Isoelectronic In-Doping on the Structural and Optical Properties of (Al)GaN Grown by Metalorganic Vapor Phase Epitaxy. (2000)
  • Akasaki Isamu ID: 9000258151980

    High Tech Research Center and Department of Electrical and Electronic Engineering, Meijo University,<BR> 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan (2000 from CiNii)

    Articles in CiNii:1

    • Piezoelectric Polarization in GaInN/GaN Heterostructures and Some Consequences for Device Design. (2000)
  • Akasaki Isamu ID: 9000258154953

    Faculty of Science and Technology, and High-Tech Research Center, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan (2001 from CiNii)

    Articles in CiNii:1

    • Zirconium Diboride (0001) as an Electrically Conductive Lattice-Matched Substrate for Gallium Nitride. (2001)
  • Akasaki Isamu ID: 9000258155774

    Department of Materials Science and Engineering, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan|High-Tech Research Center, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan (2001 from CiNii)

    Articles in CiNii:1

    • Fracture of AlxGa1-xN/GaN Heterostructure. Compositional and Impurity Dependence. (2001)
  • Akasaki Isamu ID: 9000258156092

    Department of Materials Science and Engineering, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan|High-Tech Research Center, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan (2001 from CiNii)

    Articles in CiNii:1

    • Metalorganic Vapor Phase Epitaxial Growth of High-Quality AlInN/AlGaN Multiple Layers on GaN. (2001)
  • Akasaki Isamu ID: 9000258158726

    High Tech Research Center and Department of Materials Science and Engineering, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya, 468-8502, Japan (2002 from CiNii)

    Articles in CiNii:1

    • Optical Absorption in Polarized Ga1-xInxN/GaN Quantum Wells. (2002)
  • Akasaki Isamu ID: 9000258166621

    Faculty of Science and Technology, High-Tech Research Center, Meijo University (2003 from CiNii)

    Articles in CiNii:1

    • ZrB2 Substrate for Nitride Semiconductors (2003)
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