Search Results1-20 of  85

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  • Akimoto Katsuhiro ID: 9000403857463

    Articles in CiNii:1

    • Concentration quenching of Eu-related luminescence in Eu-doped GaN (2004)
  • Akimoto Katsuhiro ID: 9000403857467

    Articles in CiNii:1

    • Control of the growth orientation and electrical properties of polycrystalline Cu2O thin films by group-IV elements doping (2004)
  • Akimoto Katsuhiro ID: 9000403857482

    Articles in CiNii:1

    • Origin of efficient luminescence from GaN:Eu3+ epitaxial films revealed by microscopic photoluminescence imaging spectroscopy (2006)
  • Akimoto Katsuhiro ID: 9000403857515

    Articles in CiNii:1

    • Na-induced variations in the structural, optical, and electrical properties of Cu(In,Ga)Se2 thin films (2009)
  • Akimoto Katsuhiro ID: 9000403867025

    Articles in CiNii:1

    • Energy band bending induced charge accumulation at fullerene/bathocuproine heterojunction interface (2012)
  • Akimoto Katsuhiro ID: 9000403869529

    Articles in CiNii:1

    • Favorable electronic structure for organic solar cells induced by strong interaction at interface (2013)
  • Akimoto Katsuhiro ID: 9000403871833

    Articles in CiNii:1

    • Effect of antimony on the deep-level traps in GaInNAsSb thin films (2014)
  • Akimoto Katsuhiro ID: 9000403877345

    Articles in CiNii:1

    • A comparative study on charge carrier recombination across the junction region of Cu2ZnSn(S,Se)4 and Cu(In,Ga)Se2 thin film solar cells (2016)
  • Akimoto Katsuhiro ID: 9000403911965

    Articles in CiNii:1

    • Suppression of concentration quenching of Er-related luminescence in Er-doped GaN (2010)
  • AKIMOTO Katsuhiro ID: 9000001097715

    Institute of Applied Physics, University of Tsukuba (2003 from CiNii)

    Articles in CiNii:1

    • Magnetic Properties of Eu-Doped GaN Grown by Molecular Beam Epitaxy (2003)
  • AKIMOTO Katsuhiro ID: 9000001464082

    Institute of Applied Physics, University of Tsukuba (2005 from CiNii)

    Articles in CiNii:1

    • Influence of 3, 4, 9, 10-Perylene Tetracarboxylic Dianhydride Intermediate Layer on Molecular Orientation of Phthalocyanine (2005)
  • AKIMOTO Katsuhiro ID: 9000005541641

    Institute of Applied Physics, University of Tsukuba (2001 from CiNii)

    Articles in CiNii:3

    • Nitrogen Doping into Cu_2O Thin Films Deposited by Reactive Radio-Frequency Magnetron Sputtering (2001)
    • Nitrogen Doping into Cu_2O Thin Films Deposited by Reactive Sputtering Method (2000)
    • Thin Film-Deposition of Cu_2 O by Reactive Radio-Frequency Magnetron Sputtering (2000)
  • AKIMOTO Katsuhiro ID: 9000005647975

    Institute of Applied Physics, University of Tsukuba (1999 from CiNii)

    Articles in CiNii:1

    • Red Emission from Eu-Doped GaN Studied by Photoluminescence and Photo-Calorimetric Spectroscopy (1999)
  • AKIMOTO Katsuhiro ID: 9000005659084

    Institute of Materials Science, University of Tsukuba (1995 from CiNii)

    Articles in CiNii:1

    • Epitaxial Growth of GaN on Sapphire (0001) Substrates by Electron Cyclotron Resonance Molecular Beam Epitaxy (1995)
  • AKIMOTO Katsuhiro ID: 9000005659852

    Institute of Materials Science, University of Tsukuba (1995 from CiNii)

    Articles in CiNii:1

    • Extended X-ray Absorption Fine Structure Study of ZnSSe and ZnMgSSe (1995)
  • AKIMOTO Katsuhiro ID: 9000005673169

    Institute of Materials Science, University of Tsukuba (1996 from CiNii)

    Articles in CiNii:1

    • Photoluminescence Properties of GaN Grown under Ion Flux Reduced Condition by Plasma Enhanced Molecular Beam Epitaxy (1996)
  • AKIMOTO Katsuhiro ID: 9000006459730

    Institute of Applied Physics, University of Tsukuba (2002 from CiNii)

    Articles in CiNii:1

    • Interface Properties between Ni and p-GaN Studied by Photoemission Spectroscopy (2002)
  • AKIMOTO Katsuhiro ID: 9000021487856

    Department of Chemistry, Faculty of Science, Kyoto University (1975 from CiNii)

    Articles in CiNii:1

    • Chemical Effects in the Auger Spectra of Fe due to Oxygen Adsorption (1975)
  • AKIMOTO Katsuhiro ID: 9000045949021

    Institute of Materials Science, University of Tsukuba (1995 from CiNii)

    Articles in CiNii:1

    • Photoluminescence of Undoped GaN Grown on c-Plane Al_2O_3 by Electron Cyclotron Resonance Molecular Beam Epitaxy (1995)
  • AKIMOTO Katsuhiro ID: 9000253325194

    Sony Corporation Research Center (1991 from CiNii)

    Articles in CiNii:1

    • Properties of oxgen-doped ZnSe and fabrication of pn junctions (1991)
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