Search Results1-6 of  6

  • An Junjie ID: 9000403889707

    Articles in CiNii:1

    • Investigation of short-circuit failure mechanisms of SiC MOSFETs by varying DC bus voltage (2018)
  • An Junjie ID: 9000403919734

    Articles in CiNii:1

    • Experimental and theoretical analyses of gate oxide and junction reliability for 4H-SiC MOSFET under short-circuit operation (2016)
  • An Junjie ID: 9000345338088

    Graduate School of Pure and Applied Sciences, University of Tsukuba (2017 from CiNii)

    Articles in CiNii:1

    • Investigation of Maximum Junction Temperature for 4H-SiC MOSFET during Unclamped Inductive Switching Test (2017)
  • An Junjie ID: 9000347210685

    Nihon University (2015 from CiNii)

    Articles in CiNii:1

    • A Study on Autonomous Mobile Robot by Using Depth Sensor (2015)
  • An Junjie ID: 9000402039901

    Articles in CiNii:1

    • Experimental and theoretical analyses of gate oxide and junction reliability for 4H-SiC MOSFET under short-circuit operation (2016)
  • An Junjie ID: 9000402049707

    Articles in CiNii:1

    • Investigation of short-circuit failure mechanisms of SiC MOSFETs by varying DC bus voltage (2018)
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