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  • ARAI Kohichi ID: 9000004964803

    System Devices Research Labs., NEC Corporation (2006 from CiNii)

    Articles in CiNii:4

    • A 65nm-node interconnect technology using ultra-thin low-k pore seal (2004)
    • Low Cost and Highly Reliable, 65nm-node Cu Dual Damascene Interconnects (2004)
    • Impact of Radical Oxynitridation on Characteristics & Reliability of Sub-1.5nm-Thick Gate-Dielectric FETs with Narrow Channel and Shallow Trench Isolation (2002)
  • ARAI Kohichi ID: 9000005733447

    System Devices Research Laboratories, NEC Corporation (2005 from CiNii)

    Articles in CiNii:4

    • 10-nm-Scale Pattern Delineation Using Calixarene Electron Beam Resist for Complementary Metal Oxide Semiconductor Gate Etching (2005)
    • Improvement of SiO2/4H-SiC Interface by Using High Temperature Hydrogen Annealing at 1000℃ (1998)
    • Improvement of SiO_2/4H-SiC Interface Using High-Temperature Hydrogen Annealing at Low Pressure and Vacuum Annealing (1999)
  • ARAI Kohichi ID: 9000021949075

    Articles in CiNii:1

    • A new method for obtaining cutting energy of filled-rubber vulcanizates and its physical meaning. (1990)
  • Arai Kohichi ID: 9000020644230

    Toshiba Corp (1990 from CiNii)

    Articles in CiNii:1

    • Development of static unbalanced power compensator with scalene Scott-connected transformer for AC traction system. (1990)
  • Arai Kohichi ID: 9000021963957

    Toshiba Corporation (1991 from CiNii)

    Articles in CiNii:1

    • Development of three-winding tansformer for Shinkansen auto-transformer feeding system receiving extra-high voltage. (1991)
  • Arai Kohichi ID: 9000258149694

    System Devices and Fundamental Research, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan (2000 from CiNii)

    Articles in CiNii:1

    • Intra-Level Mix-and-Match Lithography Process for Fabricating Sub-100-nm Complementary Metal-Oxide-Semiconductor Devices using the JBX-9300FS Point-Electron-Beam System. (2000)
  • Arai Kohichi ID: 9000258183897

    System Devices Research Laboratories, NEC Corporation (2005 from CiNii)

    Articles in CiNii:1

    • 10-nm-Scale Pattern Delineation Using Calixarene Electron Beam Resist for Complementary Metal Oxide Semiconductor Gate Etching (2005)
  • Arai Kohichi ID: 9000391385929

    株式会社東芝 (1986 from CiNii)

    Articles in CiNii:1

    • An experiment of far infrared snow melting for the Shinkansen railway (1986)
  • Arai Kohichi ID: 9000401692911

    Articles in CiNii:1

    • Intra-Level Mix-and-Match Lithography Process for Fabricating Sub-100-nm Complementary Metal-Oxide-Semiconductor Devices using the JBX-9300FS Point-Electron-Beam System (2000)
  • Arai Kohichi ID: 9000401739343

    Articles in CiNii:1

    • 10-nm-Scale Pattern Delineation Using Calixarene Electron Beam Resist for Complementary Metal Oxide Semiconductor Gate Etching (2005)
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