Search Results21-40 of  50

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  • Arai Masakazu ID: 9000258152217

    Precision and Intelligence Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan (2000 from CiNii)

    Articles in CiNii:1

    • AlAs Oxidation System with H2O Vaporizer for Oxide-Confined Surface Emitting Lasers. (2000)
  • Arai Masakazu ID: 9000258153428

    Precision and Intelligence Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan (2000 from CiNii)

    Articles in CiNii:1

    • Highly Stable Single Polarization Operation of GaInAs/GaAs Vertical-Cavity Surface-Emitting Laser on GaAs (311)B Substrate under High-Speed Modulation. (2000)
  • Arai Masakazu ID: 9000258154828

    Microsystem Research Center, Precision & Intelligence Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan (2001 from CiNii)

    Articles in CiNii:1

    • Composition Dependence of Thermal Annealing Effect on 1.3.MU.m GaInNAs/GaAs Quantum Well Lasers Grown by Chemical Beam Epitaxy. (2001)
  • Arai Masakazu ID: 9000258156042

    Microsystem Research Center, Precision and Intelligence Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan (2001 from CiNii)

    Articles in CiNii:1

    • 1.12.MU.m Polarization Controlled Highly Strained GaInAs Vertical-Cavity Surface-Emitting Lasers on GaAs(311)B by Metal Organic Chemical Vapor Deposition. (2001)
  • Arai Masakazu ID: 9000258156998

    Microsystem Research Center, Precision and Intelligence Laboratory, Tokyo Institute of Technology 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan (2001 from CiNii)

    Articles in CiNii:1

    • Monolithic Formation of Metal Organic Chemical Vapor Deposition Grown Multi-wavelength Vertical Cavities with Highly Strained GaInAs/GaAs Quantum Wells on GaAs (311)B. (2001)
  • Arai Masakazu ID: 9000258161803

    Microsystem Research Center, Precision & Intelligence Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan (2002 from CiNii)

    Articles in CiNii:1

    • Low Threshold Current Density Operation of 1.16.MU.m Highly Strained GaInAs/GaAs Vertical Cavity Surface Emitting Lasers on (100) GaAs Substrate. (2002)
  • Arai Masakazu ID: 9000258164087

    Microsystem Research Center, Tokyo Institute of Technology (2003 from CiNii)

    Articles in CiNii:1

    • Micromachined GaAs/AlGaAs Resonant-Cavity Light Emitter with Small Temperature Dependence of Emission Wavelength (2003)
  • Arai Masakazu ID: 9000258168657

    Microsystem Research Center, Precision and Intelligence Laboratory, Tokyo Institute of Technology (2003 from CiNii)

    Articles in CiNii:1

    • Design and Fabrication of Double-Cavity Tunable Filter Using Micromachined Structure (2003)
  • Arai Masakazu ID: 9000317157011

    R&D Laboratories, POLA PHARMA INC. (2016 from CiNii)

    Articles in CiNii:1

    • Distribution of Luliconazole in Nail Plate by <I>In Vitro</I> Permeation and Efficacy by Zone of Inhibition Test after Treatment of Luliconazole Nail Solution (2016)
  • Arai Masakazu ID: 9000391779359

    POLA Chemical Industries,Inc. Pharmaceuticals division (2005 from CiNii)

    Articles in CiNii:1

    • Study of relationship between intradermal distribution and antifungal activity of luliconazole. (2005)
  • Arai Masakazu ID: 9000392860779

    Articles in CiNii:1

    • GeSn/SiGeSn Multiple-Quantum-Well Electroabsorption Modulator With Taper Coupler for Mid-Infrared Ge-on-Si Platform (2018)
  • Arai Masakazu ID: 9000401564406

    Articles in CiNii:1

    • Enhanced Temperature Characteristics of InGaAs/InAlGaAs Multi-Quantum-Well Lasers on Low-In-Content InGaAs Ternary Substrates (2008)
  • Arai Masakazu ID: 9000401565816

    Articles in CiNii:1

    • 2009-01-23 (2009)
  • Arai Masakazu ID: 9000401685597

    Articles in CiNii:1

    • Fabrication of Micro-Aperture Surface Emitting Laser for Near Field Optical Data Storage (1999)
  • Arai Masakazu ID: 9000401687764

    Articles in CiNii:1

    • Micromachined Semiconductor Vertical Cavity for Temperature Insensitive Surface Emitting Lasers and Optical Filters (2000)
  • Arai Masakazu ID: 9000401689699

    Articles in CiNii:1

    • AlAs Oxidation System with H2O Vaporizer for Oxide-Confined Surface Emitting Lasers (2000)
  • Arai Masakazu ID: 9000401693693

    Articles in CiNii:1

    • 2000-10-15 (2000)
  • Arai Masakazu ID: 9000401694874

    Articles in CiNii:1

    • Vertical-Cavity Surface-Emitting Laser Array on GaAs(311)B Substrate Exhibiting Single-Transverse Mode and Stable-Polarization Operation (2000)
  • Arai Masakazu ID: 9000401695291

    Articles in CiNii:1

    • Highly Stable Single Polarization Operation of GaInAs/GaAs Vertical-Cavity Surface-Emitting Laser on GaAs (311)B Substrate under High-Speed Modulation (2000)
  • Arai Masakazu ID: 9000401699256

    Articles in CiNii:1

    • Monolithic Formation of Metal Organic Chemical Vapor Deposition Grown Multi-wavelength Vertical Cavities with Highly Strained GaInAs/GaAs Quantum Wells on GaAs (311)B (2001)
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