Search Results1-20 of  46

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  • Asaoka Hidehito ID: 9000399821242

    Articles in CiNii:1

    • Absorbent property of fullerene for cesium isotope separation investigated using X-ray photoelectron spectroscopy (Proceedings of Actinides 2017) (2018)
  • ASAOKA Hidehito ID: 9000001377747

    Japan Atomic Energy Research Institute (2000 from CiNii)

    Articles in CiNii:2

    • Thermal properties of Y123 single crystal (2000)
    • Thermal conductivity of YBCO single crystal of ab-plane (1999)
  • ASAOKA Hidehito ID: 9000001673711

    Neutron Science Research Center, Japan Atomic Energy Research Institute (2005 from CiNii)

    Articles in CiNii:1

    • Nucleation of Oxides during Dry Oxidation of Si(001)-2 × 1 Studied by Scanning Tunneling Microscopy (2005)
  • ASAOKA Hidehito ID: 9000019052608

    Quantum Beam Science Directorate, Japan Atomic Energy Agency (2012 from CiNii)

    Articles in CiNii:1

    • Ordering of C_<60> on One-Dimensional Template of Single-Domain Ge(110)-16×2 and Si(110)-16×2 Surfaces (2012)
  • ASAOKA Hidehito ID: 9000283835392

    Japan Atomic Energy Research Institute (2002 from CiNii)

    Articles in CiNii:1

    • Fabrication of β-FeSi<sub>2</sub> Thin Film on Si(111) Surface by Solid Phase Epitaxy (SPE) Analyzed by Means of Synchrotron Radiation XPS (SR-XPS) (2002)
  • ASAOKA Hidehito ID: 9000345406412

    Advanced Science Research Center, Japan Atomic Energy Agency (2016 from CiNii)

    Articles in CiNii:1

    • Stress Evolution during Si(111)7×7 Surface Reconstruction (2016)
  • ASAOKA Hidehito ID: 9000404639617

    Japan Atomic Energy Agency, Advanced Science Research Center (2019 from CiNii)

    Articles in CiNii:1

    • <i>In-situ</i> Optical Microscopy of Crystal Growth of Graphene Using Thermal Radiation (2019)
  • Asaoka Hidehito ID: 9000061628423

    Articles in CiNii:1

    • Observation of Initial Oxidation on Si(110)-16×2 surface by Scanning Tunneling Microscopy (2007)
  • Asaoka Hidehito ID: 9000252767068

    Institute for Solid State Physics, The University of Tokyo (1993 from CiNii)

    Articles in CiNii:1

    • Growth of Large Isometric YBa<SUB>2</SUB>Cu<SUB>3</SUB>O<I><SUB>x</SUB></I> Single Crystals from Coexisting Region of Solid with Melt in Y<SUB>2</SUB>O<SUB>3</SUB> Crucibles (1993)
  • Asaoka Hidehito ID: 9000252979596

    Institute for Solid State Physics, University of Tokyo (1991 from CiNii)

    Articles in CiNii:1

    • Growth of Polyhedral YBa<SUB>2</SUB>Cu<SUB>3</SUB>O<I><SUB>x</SUB></I> Single Crystals and Their Anisotropic Properties (1991)
  • Asaoka Hidehito ID: 9000258120276

    Japan Atomic Energy Research Institute, Tokai–mura, Naka–gun Ibaraki 319–11 (1994 from CiNii)

    Articles in CiNii:1

    • Homogeneity of Superconductivity in YBa2Cu3Ox Single Crystals. (1994)
  • Asaoka Hidehito ID: 9000258123279

    Japan Atomic Energy Research Institute, Tokai–mura, Naka–gun, Ibaraki 319–11 (1994 from CiNii)

    Articles in CiNii:1

    • Crystal Growth Mechanism of YBa2Cu3O.CHI. from Coexisting Region of Solid with Melt. (1994)
  • Asaoka Hidehito ID: 9000258195636

    Japan Atomic Energy Research Institute, Tokai-mura, Naka-gun, Ibaraki 319-1195 (2001 from CiNii)

    Articles in CiNii:1

    • Intrinsic Pinning does not Influence the Vortex Melting Transition of YBa2Cu3O6.94 in H .ORTH. c Configuration. (2001)
  • Asaoka Hidehito ID: 9000258701474

    JAEA (2006 from CiNii)

    Articles in CiNii:1

    • Real-time stress measurement during Ge/Si heteroepitaxial growth (2006)
  • Asaoka Hidehito ID: 9000258702611

    JAEA (2007 from CiNii)

    Articles in CiNii:1

    • Direct determination of surface stress during Ge/Si hetero-growth (2007)
  • Asaoka Hidehito ID: 9000258703373

    JAEA (2008 from CiNii)

    Articles in CiNii:1

    • In-situ observation of heterointerface between epitaxial Sr film and hydrogen-terminated Si(111) (2008)
  • Asaoka Hidehito ID: 9000258704149

    JAEA (2009 from CiNii)

    Articles in CiNii:1

    • Hetero-interface between Sr and H-terminated Si(111) analysed using neutron reflectometry (2009)
  • Asaoka Hidehito ID: 9000283572049

    Quantum Beam Science Directorate, Japan Atomic Energy Agency, Japan (2012 from CiNii)

    Articles in CiNii:1

    • One-Dimensional Nanotemplate Structure of a Si(110) Substrate (2012)
  • Asaoka Hidehito ID: 9000283847934

    JAEA (2010 from CiNii)

    Articles in CiNii:1

    • Organic thin films on the Si(110)-16*2 single domain surface (2010)
  • Asaoka Hidehito ID: 9000296664000

    Quantum Beam Science Center, Japan Atomic Energy Agency (2015 from CiNii)

    Articles in CiNii:1

    • Crystal Structure and Electron Density Distribution Analyses of Nd<i><sub>x</sub></i>Ce<sub>1−</sub><i><sub>x</sub></i>O<sub>2−<i>δ</i></sub> for Electrolyte by Rietveld/Maximum Entropy Method (2015)
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