Search Results1-9 of  9

  • BALAKRISHNAN Ganesh ID: 9000018185496

    Center for High Technology Materials, University of New Mexico (2009 from CiNii)

    Articles in CiNii:1

    • Continuous-Wave, Room-Temperature Operation of 2-μm Sb-Based Optically-Pumped Vertical-External-Cavity Surface-Emitting Laser Monolithically Grown on GaAs Substrates (2009)
  • Balakrishnan Ganesh ID: 9000237782244

    Articles in CiNii:1

    • Spectral and Transient Luminescence Measurements on GaSb/AlGaSb Quantum Wells Grown on GaSb/GaAs Heterojunctions with and without Interfacial Misfit Arrays (2013)
  • Balakrishnan Ganesh ID: 9000237783280

    Articles in CiNii:1

    • Temperature dependent carrier dynamics in telecommunication band InAs quantum dots and dashes grown on InP substrates (2013)
  • Balakrishnan Ganesh ID: 9000238353003

    Articles in CiNii:1

    • Growth and Optimization of 2-μm InGaSb/AlGaSb Quantum-Well-Based VECSELs on GaAs/AlGaAs DBRs (2013)
  • Balakrishnan Ganesh ID: 9000242576939

    Articles in CiNii:1

    • Carrier dynamics and photoluminescence quenching mechanism of strained InGaSb/AlGaSb quantum wells (2013)
  • Balakrishnan Ganesh ID: 9000345262353

    Advanced Micro Devices (AMD) (2016 from CiNii)

    Articles in CiNii:1

    • Accurate Cloning of the Memory Access Behavior (2016)
  • Balakrishnan Ganesh ID: 9000401567180

    Articles in CiNii:1

    • 2009-11-06 (2009)
  • Balakrishnan Ganesh ID: 9000401992256

    Articles in CiNii:1

    • Semipolar InGaN/GaN nanostructure light-emitting diodes onc-plane sapphire (2016)
  • Balakrishnan Ganesh ID: 9000402012525

    Articles in CiNii:1

    • Spectral and Transient Luminescence Measurements on GaSb/AlGaSb Quantum Wells Grown on GaSb/GaAs Heterojunctions with and without Interfacial Misfit Arrays (2013)
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