Search Results1-20 of  24

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  • Balakrishnan Krishnan ID: 9000024933124

    Articles in CiNii:1

    • Influence of high temperature in the growth of low dislocation content AlN bridge layers on patterned 6H-SiC substrates by metalorganic vapor phase epitaxy (2007)
  • BALAKRISHNAN Krishnan ID: 9000001534268

    Faculty of Science and Technology, 21^<st> Century COE "Nano-Factory", Meijo University (2006 from CiNii)

    Articles in CiNii:17

    • Growth of thick AlN by MOVPE (2005)
    • Microstructure of ELO-AlN grown by HT-MOVPE (2005)
    • Growth of thick AlN by MOVPE (2005)
  • BALAKRISHNAN Krishnan ID: 9000002536486

    Faculty of Science and Technology, 21st Century COE Nano-Factory, Meijo University (2004 from CiNii)

    Articles in CiNii:27

    • Growth of InGaSb under Reduced Gravity ushing an Airplane (2001)
    • Effects of Natural and Marangoni Convections on Dissolution of GaSb in InSb Melt (2000)
    • In-situ Observation of Formation of InGaSb Projections under Micrograbity using Drop Experiment (2001)
  • BALAKRISHNAN Krishnan ID: 9000005579065

    Electrotechnical Laboratory (1997 from CiNii)

    Articles in CiNii:1

    • Structural Analysis of Cubic GaN through X-Ray Pole Figure Generation (1997)
  • BALAKRISHNAN Krishnan ID: 9000016652004

    Department of Electrical Engineering, University of South Carolina (2009 from CiNii)

    Articles in CiNii:1

    • Vertical Injection Thin Film Deep Ultraviolet Light Emitting Diodes with AlGaN Multiple-Quantum Wells Active Region (2009)
  • BALAKRISHNAN Krishnan ID: 9000107313626

    Faculty of Science and Technology, 21st-Century COE Program "Nano-factory", Meijo University (2007 from CiNii)

    Articles in CiNii:1

    • Dislocations in AlN Epilayers Grown on Sapphire Substrate by High-Temperature Metal-Organic Vapor Phase Epitaxy (2007)
  • BALAKRISHNAN Krishnan ID: 9000107341733

    Faculty of Science and Technology, 21st Century-COE "Nano-Factory", Meijo University (2005 from CiNii)

    Articles in CiNii:1

    • Impact of H_2-Preannealing of the Sapphire Substrate on the Crystallinity of Low-Temperature-Deposited AlN Buffer Layer (2005)
  • BALAKRISHNAN Krishnan ID: 9000107349105

    Research Institute of Electronics, Shizuoka University (2003 from CiNii)

    Articles in CiNii:1

    • Composition Conversion Mechanism of InSb into InGaSb (2003)
  • BALAKRISHNAN Krishnan ID: 9000107355396

    Department of Electrical Engineering, University of South Carolina (2011 from CiNii)

    Articles in CiNii:1

    • Ultraviolet Stimulated Emission From Optically Pumped AlGaN/AlGaN Multiple Quantum Wells on Pulsed Laterally Overgrown a-Plane GaN (2011)
  • Balakrishnan Krishnan ID: 9000025017383

    Articles in CiNii:1

    • First demonstration of semipolar deep ultraviolet light emitting diode on m-plane sapphire with AlGaN multiple quantum wells (2010)
  • Balakrishnan Krishnan ID: 9000047210479

    Articles in CiNii:1

    • Thermodynamic Aspects of Growth of AlGaN by High-Temperature Metal Organic Vapor Phase Epitaxy (2006)
  • Balakrishnan Krishnan ID: 9000082850099

    Articles in CiNii:1

    • High-Temperature Metal-Organic Vapor Phase Epitaxial Growth of AlN on Sapphire by Multi Transition Growth Mode Method Varying V/III Ratio (2006)
  • Balakrishnan Krishnan ID: 9000258133386

    Electrotechnical Laboratory, 1–1–4 Umezono, Tsukuba, 305 Ibaraki, Japan (1997 from CiNii)

    Articles in CiNii:1

    • Structural Analysis of Cubic GaN through X-Ray Pole Figure Generation. (1997)
  • Balakrishnan Krishnan ID: 9000258144041

    Electrotechnical Laboratory, 1–1–4 Umezono, Tsukuba, Ibaraki 305–8568, Japan (1999 from CiNii)

    Articles in CiNii:1

    • Computer Simulation for Analysis of Lattice Polarity of Wurtzite GaN{0001} Film by Coaxial Impact Collision Ion Scattering Spectroscopy. (1999)
  • Balakrishnan Krishnan ID: 9000258150346

    Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305-8568, Japan (2000 from CiNii)

    Articles in CiNii:1

    • Characterization of Polarity of Plasma-Assisted Molecular Beam Epitaxial GaN{0001} Film Using Coaxial Impact Collision lon Scattering Spectroscopy. (2000)
  • Balakrishnan Krishnan ID: 9000258182612

    Faculty of Science and Technology, 21st Century-COE “Nano-Factory”, Meijo University (2005 from CiNii)

    Articles in CiNii:1

    • Impact of H2-Preannealing of the Sapphire Substrate on the Crystallinity of Low-Temperature-Deposited AlN Buffer Layer (2005)
  • Balakrishnan Krishnan ID: 9000401571022

    Articles in CiNii:1

    • Ultraviolet Stimulated Emission From Optically Pumped AlGaN/AlGaN Multiple Quantum Wells on Pulsed Laterally Overgrown $a$-Plane GaN (2011)
  • Balakrishnan Krishnan ID: 9000401666875

    Articles in CiNii:1

    • Structural Analysis of Cubic GaN through X-Ray Pole Figure Generation (1997)
  • Balakrishnan Krishnan ID: 9000401685417

    Articles in CiNii:1

    • Computer Simulation for Analysis of Lattice Polarity of Wurtzite GaN{0001} Film by Coaxial Impact Collision Ion Scattering Spectroscopy (1999)
  • Balakrishnan Krishnan ID: 9000401695106

    Articles in CiNii:1

    • Characterization of Polarity of Plasma-Assisted Molecular Beam Epitaxial GaN{0001} Film Using Coaxial Impact Collision Ion Scattering Spectroscopy (2000)
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