Search Results1-13 of  13

  • Bouzazi Boussairi ID: 9000025069756

    Articles in CiNii:1

    • Effect of Thermal Stress on a N-Related Recombination Center in GaAsN Grown by Chemical Beam Epitaxy (Special Issue : Solid State Devices and Materials (1)) (2012)
  • Bouzazi Boussairi ID: 9000241669404

    Articles in CiNii:1

    • Ⅲ-Ⅴ-N Materials for Super-High Efficiency Multi Junction Solar Cells (Special Issue : Recent Advances in Nitride Semiconductors) (2013)
  • BOUZAZI Boussairi ID: 9000018185954

    Toyota Technological Institute (2010 from CiNii)

    Articles in CiNii:1

    • Nitrogen Related Electron Trap with High Capture Cross Section in n-Type GaAsN Grown by Chemical Beam Epitaxy (2010)
  • Bouzazi Boussairi ID: 9000025072067

    Articles in CiNii:1

    • Properties of a nitrogen-related hole trap acceptor-like state in p-type GaAsN grown by chemical beam epitaxy (2010)
  • Bouzazi Boussairi ID: 9000025080714

    Articles in CiNii:1

    • Origin investigation of a nitrogen-related recombination center in GaAsN grown by chemical beam epitaxy (2011)
  • Bouzazi Boussairi ID: 9000025117060

    Articles in CiNii:1

    • Nitrogen-related recombination center in GaAsN grown by chemical beam epitaxy (2010)
  • Bouzazi Boussairi ID: 9000401568022

    Articles in CiNii:1

    • Nitrogen Related Electron Trap with High Capture Cross Section in n-Type GaAsN Grown by Chemical Beam Epitaxy (2010)
  • Bouzazi Boussairi ID: 9000401804163

    Articles in CiNii:1

    • Effect of Thermal Stress on a N-Related Recombination Center in GaAsN Grown by Chemical Beam Epitaxy (2012)
  • Bouzazi Boussairi ID: 9000401997631

    Articles in CiNii:1

    • Origin Investigation of a Nitrogen-Related Recombination Center in GaAsN Grown by Chemical Beam Epitaxy (2011)
  • Bouzazi Boussairi ID: 9000402005025

    Articles in CiNii:1

    • Effect of Thermal Stress on a N-Related Recombination Center in GaAsN Grown by Chemical Beam Epitaxy (2012)
  • Bouzazi Boussairi ID: 9000402017078

    Articles in CiNii:1

    • 2013-08-01 (2013)
  • Bouzazi Boussairi ID: 9000402022362

    Articles in CiNii:1

    • Effect of surface morphology on the density of energy states in GaAsN grown by chemical beam epitaxy (2014)
  • Bouzazi Boussairi ID: 9000402025827

    Articles in CiNii:1

    • Analysis of the main acceptor defect in p-type GaAsN grown by chemical beam epitaxy (2014)
Page Top