Search Results1-20 of  26

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  • CHEN Bomy ID: 9000001463658

    Silicon Storage Technology Inc. (2005 from CiNii)

    Articles in CiNii:1

    • Modeling of Two Different Operation Modes of Phase Change Material for Phase-Change Random-Access Memory (2005)
  • CHEN Bomy ID: 9000001719383

    IBM, Microelectronic Division (2000 from CiNii)

    Articles in CiNii:1

    • Electrical Characterization of a Triple Self-Aligned Split-Gate Flash Cell for 0.18μm Embedded Application (2000)
  • CHEN Bomy ID: 9000001857332

    Silicon Storage Technology, Inc. (2009 from CiNii)

    Articles in CiNii:4

    • Investigation of Compositional Gradient Phase Change Si_xSb_2Te_3 Thin Films (2007)
    • High Speed Chalcogenide Random Access Memory Based on Si_2Sb_2Te_5 (2007)
    • Germanium Nitride Interfacial Layer for Chalcogenide Random Access Memory Applications (2008)
  • CHEN Bomy ID: 9000016261531

    SST Inc. (2007 from CiNii)

    Articles in CiNii:1

    • Multilevel Storage in Phase-Change Memory (2007)
  • CHEN Bomy ID: 9000107347603

    Silicon Storage Technology, Inc. (2007 from CiNii)

    Articles in CiNii:1

    • Multilevel Data Storage Characteristics of Phase Change Memory Cell with Doublelayer Chalcogenide Films (Ge_2Sb_2Te_5 and Sb_2Te_3) (2007)
  • CHEN Bomy ID: 9000107347632

    Silicon Storage Technology, Inc. (2007 from CiNii)

    Articles in CiNii:1

    • Reversible Resistance Switching of GeTi Thin Film Used for Non-Volatile Memory (2007)
  • CHEN Bomy ID: 9000107354646

    Silicon Storage Technology, Inc. (2006 from CiNii)

    Articles in CiNii:1

    • Effects of Si Doping on Phase Transition of Ge_2Sb_2Te_5 Films by in situ Resistance Measurements (2006)
  • Chen Bomy ID: 9000054667261

    Articles in CiNii:1

    • Design of Multi-States Storage Medium for Phase Change Memory (2007)
  • Chen Bomy ID: 9000066354494

    Articles in CiNii:1

    • Phase Change Memory Cell Using Si2Sb2Te3Material (2010)
  • Chen Bomy ID: 9000258179955

    Silicon Storage Technology Inc. (2005 from CiNii)

    Articles in CiNii:1

    • Modeling of Two Different Operation Modes of Phase Change Material for Phase-Change Random-Access Memory (2005)
  • Chen Bomy ID: 9000316214765

    Shanghai Xinchu Integrated Circuit Incorporation (2016 from CiNii)

    Articles in CiNii:1

    • An FPGA enhanced extensible and parallel query storage system for emerging NVRAM (2016)
  • Chen Bomy ID: 9000345384575

    Shanghai Xinchu Integrated Circuit Incorporation (2017 from CiNii)

    Articles in CiNii:1

    • Multi-core architecture with asynchronous clocks to prevent power analysis attacks (2017)
  • Chen Bomy ID: 9000351078822

    Shanghai Xinchu Integrated Circuit Inc. (2017 from CiNii)

    Articles in CiNii:1

    • CAM-based retention-aware DRAM (CRA-DRAM) for refresh power reduction (2017)
  • Chen Bomy ID: 9000356511210

    Shanghai Xinchu Integrated Circuit Inc. (2017 from CiNii)

    Articles in CiNii:1

    • Erratum: CAM-based retention-aware DRAM (CRA-DRAM) for refresh power reduction [IEICE Electronics Express Vol. 14 (2017) No. 10 pp. 20170053] (2017)
  • Chen Bomy ID: 9000362818961

    Shanghai Xinchu Integrated Circuit Incorporation (2017 from CiNii)

    Articles in CiNii:1

    • Logic area reduction using the deep trench isolation technique based on 40 nm embedded PCM process (2017)
  • Chen Bomy ID: 9000401563882

    Articles in CiNii:1

    • Germanium Nitride Interfacial Layer for Chalcogenide Random Access Memory Applications (2007)
  • Chen Bomy ID: 9000401566896

    Articles in CiNii:1

    • Si2Sb2Te6Phase Change Material for Low-Power Phase Change Memory Application (2009)
  • Chen Bomy ID: 9000401735041

    Articles in CiNii:1

    • Modeling of Two Different Operation Modes of Phase Change Material for Phase-Change Random-Access Memory (2005)
  • Chen Bomy ID: 9000401755555

    Articles in CiNii:1

    • Effects of Si Doping on Phase Transition of Ge2Sb2Te5Films byin situResistance Measurements (2006)
  • Chen Bomy ID: 9000401760382

    Articles in CiNii:1

    • 2007-07-04 (2007)
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