Search Results1-20 of  145

  • Chang Shoou Jinn ID: 9000001684206

    Articles in CiNii:1

    • Optimized Si-Cap Layer Thickness for Tensile-Strained-Si/ Compressively Strained SiGe Dual-Channel Transistors in 0.13μm Complementary Metal Oxide Semiconductor Technology (2005)
  • Chang Shoou-Jinn ID: 9000024933376

    Articles in CiNii:1

    • AlGaN ultraviolet metal-semiconductor-metal photodetectors with low-temperature-grown cap layers (Special issue: Solid state devices and materials) (2007)
  • Chang Shoou Jinn ID: 9000024940565

    Articles in CiNii:1

    • Evaluation of interface properly and DC characteristics enhancement in nanoscale n-channel metal-oxide-semiconductor field-effect transistor using stress memorization technique (2010)
  • Chang Shoou-Jinn ID: 9000025016442

    Articles in CiNii:1

    • AlGaN metal-semiconductor-metal photodetectors with low-temperature AlN cap layer and recessed electrodes (Special issue: Solid state devices and materials) (2010)
  • Chang Shoou-Jinn ID: 9000025030706

    Articles in CiNii:1

    • High-responsivity InGaAs/InP quantum-well infrared photodetectors prepared by metal organic chemical vapor deposition (Special issue: Solid state devices and materials) (2009)
  • Chang Shoou Jinn ID: 9000025118635

    Articles in CiNii:1

    • Hole Confinement and 1/f Noise Characteristics of SiGe Double-Quantum-Well p-Type Metal-Oxide-Semiconductor Field-Effect Transistors (2006)
  • Chang Shoou-Jinn ID: 9000025122424

    Articles in CiNii:1

    • A novel fabrication of p-n diode based on ZnO nanowire/p-NiO heterojunction (Special issue: Advanced plasma science and its applications for nitrides and nanomaterials) (2011)
  • CHANG Shoou Jinn ID: 9000001684205

    Institute of Microelectronics and Department of Electrical Engineering, National Cheng Kung University (2005 from CiNii)

    Articles in CiNii:1

    • Investigation of Transport Mechanism for Strained Si n Metal-Oxide-Semiconductor Field-Effect Transistor Grown on Multi-Layer Substrate (2005)
  • CHANG Shoou Jinn ID: 9000001719055

    Department of Electrical Engineering, National Cheng Kung University (2000 from CiNii)

    Articles in CiNii:2

    • The Study of Metal-GaN Interface of Schottky Contacts with Different Metals (2000)
    • The Study of GaN and InGaN Metal-Semiconductor-Metal Photodetectors with Different Schottky Contact Metals (2000)
  • CHANG Shoou Jinn ID: 9000002176174

    Institute of Microelectronics and Department of Electrical Engineering, National Cheng Kung University (2007 from CiNii)

    Articles in CiNii:1

    • Investigation of Impact Ionization in Strained-Si nMOSFETs (2007)
  • CHANG Shoou Jinn ID: 9000005688480

    Institute of Microelectronics and Department of Electrical Engineering, National Cheng Kung University (2002 from CiNii)

    Articles in CiNii:7

    • Vertical High Quality Mirrorlike Facet of GaN-Based Device by Reactive Ion Etching (2000)
    • A New Silicon Field-Effect Transistors with Two-Hole-Transport-Mode (HTM) Channels Grown by Molecular Beam Epitaxy (MBE) (1998)
    • A Novel Triple δ-Doped SiGe Heterostructure Field-Effect Transistor (2002)
  • CHANG Shoou Jinn ID: 9000018186612

    Institute of Microelectronics & Department of Electrical Engineering, Center for Micro/Nano Science and Engineering, National Cheng Kung University (2010 from CiNii)

    Articles in CiNii:1

    • Surface Characteristics, Optical and Electrical Properties on Sol-Gel Synthesized Sn-Doped ZnO Thin Film (2010)
  • CHANG Shoou Jinn ID: 9000107334378

    Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University (2001 from CiNii)

    Articles in CiNii:1

    • Vertical High Quality Mirrorlike Facet of GaN-Based Device by Reactive Ion Etching (2001)
  • CHANG Shoou Jinn ID: 9000107389806

    Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University (2003 from CiNii)

    Articles in CiNii:1

    • P-Type Enhancement-Mode SiGe Doped-Channel Field-Effect Transistor (2003)
  • CHANG Shoou-Jinn ID: 9000001463709

    Department of electrical Engineering, National Cheng Kung University (2005 from CiNii)

    Articles in CiNii:1

    • Enhancing P-type Conductivity in Mg-doped GaN Using Oxygen and Nitrogen Plasma Activation (2005)
  • CHANG Shoou-Jinn ID: 9000001497610

    Institute of Microelectronics and Department of Electrical Engineering, National Cheng Kung University (2005 from CiNii)

    Articles in CiNii:1

    • Improved Performance of 2, 3-Dibutoxy-1, 4-Phenylene Vinylene Based Polymer Light-Emitting Diodes by Thermal Annealing (2005)
  • CHANG Shoou-Jinn ID: 9000002166338

    National Cheng Kung University, Institute of Microelectronics, Department of Electrical Engineering (2005 from CiNii)

    Articles in CiNii:2

    • Study of the electron properties by persistent photoconductive measurement in Ga_xIn_<1-x>N_yAs_<1-y> (2004)
    • Improvement of Linearity in Novel InGaAsN-based HEMTs (2005)
  • CHANG Shoou-Jinn ID: 9000002173487

    Institute of Microelectronics and Department of Electrical Engineering, National Cheng Kung University (2006 from CiNii)

    Articles in CiNii:1

    • AlGaN Ultraviolet Metal-Semiconductor-Metal Photodetectors with Low-Temperature-Grown Cap Layers (2006)
  • CHANG Shoou-Jinn ID: 9000002176640

    Center for Micro/Nano Science and Technology National Cheng Kung University (2007 from CiNii)

    Articles in CiNii:1

    • Fabrication of InGaN/GaN Multiple Quantum Wells Nanopillars by Focused Ion Beam Milling (2007)
  • CHANG Shoou-Jinn ID: 9000002176853

    Institute of Microelectronics & Department of Electrical Engineering National Cheng Kung University (2007 from CiNii)

    Articles in CiNii:1

    • ZnO Nanowire-Based CO Sensors Prepared at Various Temperatures (2007)
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