Search Results1-10 of  10

  • Chen Frederick Tse-shyang ID: 9000002618393

    Articles in CiNii:1

    • The Planned Preemptive Strike by the United States Against Iraq and the International Law of Self-Defense (2003)
  • Chen Frederick Tse-shyang ID: 9000010135082

    Articles in CiNii:1

    • The Iraqi War, Hegemony, and International Law (2005)
  • Chen Frederick T. ID: 9000401805182

    Articles in CiNii:1

    • Improvement of Uniformity of Resistive Switching Parameters by Selecting the Electroformation Polarity in IrO$_{x}$/TaO$_{x}$/WO$_{x}$/W Structure (2012)
  • Chen Frederick T. ID: 9000401805217

    Articles in CiNii:1

    • Record Resistance Ratio and Bipolar/Unipolar Resistive Switching Characteristics of Memory Device Using Germanium Oxide Solid Electrolyte (2012)
  • Chen Frederick T. ID: 9000401805253

    Articles in CiNii:1

    • Formation-Polarity-Dependent Improved Resistive Switching Memory Performance Using IrO$_{x}$/GdO$_{x}$/WO$_{x}$/W Structure (2012)
  • Chen Frederick T. ID: 9000402006050

    Articles in CiNii:1

    • Improvement of Uniformity of Resistive Switching Parameters by Selecting the Electroformation Polarity in IrOx/TaOx/WOx/W Structure (2012)
  • Chen Frederick T. ID: 9000402006085

    Articles in CiNii:1

    • Record Resistance Ratio and Bipolar/Unipolar Resistive Switching Characteristics of Memory Device Using Germanium Oxide Solid Electrolyte (2012)
  • Chen Frederick T. ID: 9000402006121

    Articles in CiNii:1

    • Formation-Polarity-Dependent Improved Resistive Switching Memory Performance Using IrOx/GdOx/WOx/W Structure (2012)
  • Chen Frederick ID: 9000401786779

    Articles in CiNii:1

    • Improved Bipolar Resistive Switching of HfOx/TiN Stack with a Reactive Metal Layer and Post Metal Annealing (2010)
  • Chen Frederick ID: 9000402025398

    Articles in CiNii:1

    • Impact of self-complementary resistance switch induced by over-reset energy on the memory reliability of hafnium oxide based resistive random access memory (2014)
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