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  • Chin Daeje ID: 9000004871533

    Product Development Center, Memory Division, Samsung Electronics (1994 from CiNii)

    Articles in CiNii:2

    • Variable V_<CC> Design Techniques for Battery-Operated DRAM's (Special Section on the 1992 VLSI Circuits Symposium) (1993)
    • 16-Mb Synchronous DRAM with 125-Mbyte/s Data Rate (Special Section on the 1993 VLSI Circuits Symposium (Joint Issue with the IEEE Journal of Solid-State Circuits, Vol.29, No.4 April 1994)) (1994)
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