Search Results1-20 of  53

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  • Cho Won-Ju ID: 9000025063398

    Articles in CiNii:1

    • Channel Recessed One Transistor Dynamic Random Access Memory with SiO₂/Si₃N₄/SiO₂ Gate Dielectric (Special Issue : Microprocesses and Nanotechnology) (2012)
  • Cho Won-Ju ID: 9000025069904

    Articles in CiNii:1

    • Fabrication of High Performance Ion-Sensitive Field-Effect Transistors Using an Engineered Sensing Membrane for Bio-Sensor Application (Special Issue : Solid State Devices and Materials (1)) (2012)
  • Cho Won-Ju ID: 9000241800182

    Articles in CiNii:1

    • Investigation of Tungsten Nitride Deposition Using Tungsten Hexafluoride Precursor for Via and Plug Metallization (Special Issue : Electronic Materials and Nanotechnology for Green Environment) (2013)
  • CHO Won-Ju ID: 9000004780246

    LG Semicon Co., Ltd. (1999 from CiNii)

    Articles in CiNii:3

    • Dependence of Reverse Narrow Width Effect and Sub-threshold Hump Characteristics on the Gate length (1999)
    • Dependence of Reverse Narrow Width Effect and Sub-threshold Hump Characteristics on the Gate length (1999)
    • Dependence of Reverse Narrow Width Effect and Sub-threshold Hump Characteristics on the Gate length (1999)
  • CHO Won-Ju ID: 9000005596311

    LG Semicon Co., Ltd. (1999 from CiNii)

    Articles in CiNii:1

    • Effects of Oxidation Ambient and Low Temperature Post Oxidation Anneal on the Silicon/Oxide Interface Structure and the Electrical Properties of the Thin Gate Oxide (1999)
  • CHO Won-Ju ID: 9000005891369

    Hyundai Electronics Co. (2000 from CiNii)

    Articles in CiNii:1

    • Gate-Oxide-Integrity Characteristics of Vacancy-rich Wafer Compared with Crystal-Originated-Pits-free Wafer as a Function of Oxide Thickness (2000)
  • CHO Won-Ju ID: 9000006179149

    Department of Electronic Material Engineering, Kwangwoon University (2008 from CiNii)

    Articles in CiNii:14

    • Analysis of Interface Property of SiGe-On-Insulator (SGOI) Substrate with a Strained-Si Layer for Nano-CMOS Device Applications (2006)
    • SOI-Based Nanoscale CMOS Device Technology (2006)
    • Ultra-Shallow Junction Formation using Novel Plasma Doping Technology beyond 50nm MOS Devices (2004)
  • CHO Won-Ju ID: 9000107388832

    Nano Electronic Device Team, Fundamental Technology Department, Future Technology Research Division, Electronics and Telecommunications Research Institute (2004 from CiNii)

    Articles in CiNii:1

    • Fabrication of 50nm Trigate Silicon On Insulator Metal-Oxide-Silicon Field-Effect Transistor without Source/Drain Activation Annealing (2004)
  • CHO Won-ju ID: 9000005601658

    Process Development Team, Memory Business HQ, LG Semicon Ltd. (1999 from CiNii)

    Articles in CiNii:1

    • Effects of Crystal Originated Particles on Breakdown Characteristics of Ultra Thin Gate Oxide (1999)
  • CHO Won-ju ID: 9000005901110

    Process Development Team, Hyundai Micro-Electronics Ltd.:(Present address)Material Science Division, Electrotechnical Laboratory (2000 from CiNii)

    Articles in CiNii:1

    • Effects of Denudation Anneal of Silicon wafer on the Characteristics of Ultra Large - Scale Integration Devices (2000)
  • CHO Won-ju ID: 9000107344412

    Department of Semiconductor and New Materials, College of Electronics & Information, Kwangwoon University (2005 from CiNii)

    Articles in CiNii:1

    • Ultrashallow Junction Formation Using Novel Plasma Doping Technology beyond 50nm MOS Devices (2005)
  • CHO Won-ju ID: 9000107356264

    Fundamental Technology Department, Basic Rrsearch Laboratory (2003 from CiNii)

    Articles in CiNii:1

    • Gate Depletion in WSi_x/Polysilicon Gate Stack and Effects of Phosphorus Ion Implantation (2003)
  • Cho Won-Ju ID: 9000025037849

    Articles in CiNii:1

    • Fabrication of low temperature polycrystalline silicon thin-film transistor nonvolatile memory devices for digital memory on glass applications (Special issue: Solid state devices and materials) (2008)
  • Cho Won-Ju ID: 9000078383945

    Articles in CiNii:1

    • Characteristics of Nano-Floating-Gate Memory with Au Nanoparticles in SiO2Dielectrics (2007)
  • Cho Won-Ju ID: 9000080523775

    Articles in CiNii:1

    • Fabrication of Nonvolatile Nano Floating Gate Memory with Self-Assembled Metal-Oxide Nano Particles Embedded in Polyimide (2008)
  • Cho Won-Ju ID: 9000242139974

    Articles in CiNii:1

    • Enhanced Sensing Properties of Fully Depleted Silicon-on-Insulator-Based Extended-Gate Field-Effect Transistor with Dual-Gate Operation (2013)
  • Cho Won-Ju ID: 9000258152709

    Hyundai Electronics Co., 1, Hyangjeoung-dong, Hungduk-gu, Chungju City, Chungbuk, 361-725, Korea (2000 from CiNii)

    Articles in CiNii:1

    • Gate-Oxide-Integrity Characteristics of Vacancy-rich Wafer Compared with Crystal-Originated-Pits-free Wafer as a Function of Oxide Thickness. (2000)
  • Cho Won-Ju ID: 9000258172554

    Nano Electronic Device Team, Fundamental Technology Department, Future Technology Research Division, Electronics and Telecommunications Research Institute (2004 from CiNii)

    Articles in CiNii:1

    • Fabrication of 50 nm Trigate Silicon On Insulator Metal-Oxide-Silicon Field-Effect Transistor without Source/Drain Activation Annealing (2004)
  • Cho Won-Ju ID: 9000401690218

    Articles in CiNii:1

    • Gate-Oxide-Integrity Characteristics of Vacancy-rich Wafer Compared with Crystal-Originated-Pits-free Wafer as a Function of Oxide Thickness (2000)
  • Cho Won-Ju ID: 9000401725534

    Articles in CiNii:1

    • 2004-05-11 (2004)
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