Search Results1-19 of  19

  • ESHITA Takashi ID: 9000001931300

    Fujitsu Laboratories Ltd (1997 from CiNii)

    Articles in CiNii:1

    • Magnetic Properties of Co-based Granular Films and their Application to Quasi-Microwave-Range Inductors (1997)
  • ESHITA Takashi ID: 9000003304037

    Department of Crystalline Materials Science,Faculty of Engineering,Nagoya University (1986 from CiNii)

    Articles in CiNii:2

    • Generation of Free Excitons by Optical Excitation of Self-Trapped Excitons in KI (1984)
    • Volume Change due to Self-Trapped Exciton and Frenkel Pair in KBr (1986)
  • ESHITA Takashi ID: 9000004779465

    Articles in CiNii:8

    • Nonvolatile ferroelectric random access memory (2000)
    • Embedded FRAM on CMOS logic LSI technology (2002)
    • 富士通のFRAMプロセス技術 (特集1:FRAM) (2002)
  • ESHITA Takashi ID: 9000005581199

    Fujitsu Limited (2002 from CiNii)

    Articles in CiNii:2

    • Realization of Highly Resistive GaAs/Si Interface and Improvement of RF Performance for High Electron-Mobility Transistors Grown on Si Substrates (1997)
    • IrO_2/Pb (Zr, Ti) O_3/Pt Capacitor Degradation with D_2 Gas at Elevated Temperature (2002)
  • ESHITA Takashi ID: 9000017585797

    Fujitsu Semiconductor Ltd. (2010 from CiNii)

    Articles in CiNii:2

    • Development of sub-10μm Thinning Technology using Actual Device Wafers (2010)
    • Development of sub-10μm Thinning Technology using Actual Device Wafers (2010)
  • ESHITA Takashi ID: 9000253327557

    F-Project, Fujitsu Laboratories Ltd. (2000 from CiNii)

    Articles in CiNii:1

    • Nonvolatile ferroelectric random access memory (2000)
  • ESHITA Takashi ID: 9000253328198

    FRAM Division, Fujitsu Ltd. (2002 from CiNii)

    Articles in CiNii:1

    • Embedded FRAM on CMOS logic LSI technology (2002)
  • Eshita Takashi ID: 9000254134432

    Department of Crystalline Materials Science, Faculty of Engineering, Nagoya University (1984 from CiNii)

    Articles in CiNii:1

    • Generation of Free Excitons by Optical Excitation of Self-Trapped Excitons in KI (1984)
  • Eshita Takashi ID: 9000254560700

    Articles in CiNii:1

    • Two Slowly Decaying Luminescence Bands in Alkali Iodides (1985)
  • Eshita Takashi ID: 9000254562256

    Department of Crystalline Materials Science, Faculty of Engineering, Nagoya University (1986 from CiNii)

    Articles in CiNii:1

    • Volume Change due to Self-Trapped Exciton and Frenkel Pair in KBr (1986)
  • Eshita Takashi ID: 9000258136609

    Fujitsu Laboratories Ltd., 10–1 Morinosato–Wakamiya, Atsugi 243–01, Japan (1997 from CiNii)

    Articles in CiNii:1

    • Realization of Highly Resistive GaAs/Si Interface and Improvement of RF Performance for High Electron-Mobility Transistors Grown on Si Substrates. (1997)
  • Eshita Takashi ID: 9000401663206

    Articles in CiNii:1

    • Realization of Highly Resistive GaAs/Si Interface and Improvement of RF Performance for High Electron-Mobility Transistors Grown on Si Substrates (1997)
  • Eshita Takashi ID: 9000401851053

    Department of Crystalline Materials Science, Faculty of Engineering, Nagoya University (1984 from CiNii)

    Articles in CiNii:1

    • Generation of Free Excitons by Optical Excitation of Self-Trapped Excitons in KI (1984)
  • Eshita Takashi ID: 9000401853865

    Department of Crystalline Materials Science, Faculty of Engineering, Nagoya University (1985 from CiNii)

    Articles in CiNii:1

    • Two Slowly Decaying Luminescence Bands in Alkali Iodides (1985)
  • Eshita Takashi ID: 9000401855884

    Department of Crystalline Materials Science, Faculty of Engineering, Nagoya University (1986 from CiNii)

    Articles in CiNii:1

    • Volume Change due to Self-Trapped Exciton and Frenkel Pair in KBr (1986)
  • Eshita Takashi ID: 9000401977023

    Articles in CiNii:1

    • Ferroelectric random access memory with high electric properties and high production yield realized by employing an AlOx underlying layer of Pt bottom electrode for a La-doped lead zirconate titanate capacitor (2018)
  • Eshita Takashi ID: 9000402045320

    Articles in CiNii:1

    • Control of La-doped Pb(Zr,Ti)O3crystalline orientation and its influence on the properties of ferroelectric random access memory (2017)
  • Eshita Takashi ID: 9000402052271

    Articles in CiNii:1

    • Development of highly reliable ferroelectric random access memory and its Internet of Things applications (2018)
  • Eshita Takashi ID: 9000402052429

    Articles in CiNii:1

    • Improvement of ferroelectric random access memory manufacturing margin by employing Pt/AlO x bottom electrode for the La-doped Pb(Zr,Ti)O3 ferroelectric capacitor (2018)
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