Search Results1-14 of  14

  • Eikyu Katsumi ID: 9000025016953

    Articles in CiNii:1

    • Temperature coefficient of threshold voltage in high-k metal gate transistors with various TiN and capping layer thicknesses (Special issue: Solid state devices and materials) (2010)
  • EIKYU Katsumi ID: 9000004875052

    ULSI Research and Development Center, Mitsubishi Electric Corporation (2000 from CiNii)

    Articles in CiNii:3

    • 3-D Topography and Impurity Integrated Process Simulator (3-D MIPS) and Its Applications (1999)
    • 2-Dimensional Simulation of FN Current Suppression Including Phonon Assisted Tunneling Model in Silicon Dioxide (1999)
    • Simulation of Dopant Redistribution During Gate Oxidation Including Transient - Enhanced Diffusion Caused by Implantation Damage (2000)
  • EIKYU Katsumi ID: 9000004954090

    Renesas Technology Corp. (2009 from CiNii)

    Articles in CiNii:15

    • Non-Destructive Inverse Modeling of Cu interconnect structure in 90nm Technology Node (2003)
    • An Analysis of the Electrical Characteristics of a-Si:H TFT's Including Contact Current- Voltage Characteristics (1996)
    • Coupling of Device/Circuit Simulators (1995)
  • EIKYU Katsumi ID: 9000015734691

    ULSI Development Center, Mitsubishi Electric Corporation (2003 from CiNii)

    Articles in CiNii:1

    • Modified Gate Re-Oxidation Technology for High-Performance Embedded Dynamic RAM by Self-Adjusted Gate Bird's Beak (2003)
  • Eikyu Katsumi ID: 9000079998938

    Articles in CiNii:1

    • A Robust Silicon-on-Insulator Static-Random-Access-Memory Architecture by using Advanced Actively Body-Bias Controlled Technology (2008)
  • Eikyu Katsumi ID: 9000252767908

    Research Center for Advanced Science and Technology, The University of Tokyo (1993 from CiNii)

    Articles in CiNii:1

    • Fabrication of YBCO/PBCO/SrTiO<SUB>3</SUB>/PBCO/YBCO Layered Structure for Superconductor-Insulator-Superconductor Tunnel-Type Josephson Junction (1993)
  • Eikyu Katsumi ID: 9000258166497

    ULSI Development Center, Mitsubishi Electric Corporation (2003 from CiNii)

    Articles in CiNii:1

    • Modified Gate Re-Oxidation Technology for High-Performance Embedded Dynamic RAM by Self-Adjusted Gate Bird's Beak (2003)
  • Eikyu Katsumi ID: 9000392738396

    Articles in CiNii:1

    • Fabrication of YBCO/PBCO/SrTiO<SUB>3</SUB>/PBCO/YBCO Layered Structure for Superconductor-Insulator-Superconductor Tunnel-Type Josephson Junction (1993)
  • Eikyu Katsumi ID: 9000401638097

    Articles in CiNii:1

    • Fabrication of YBCO/PBCO/SrTiO3/PBCO/YBCO Layered Structure for Superconductor-Insulator-Superconductor Tunnel-Type Josephson Junction (1993)
  • Eikyu Katsumi ID: 9000401688845

    Articles in CiNii:1

    • Simulation of Dopant Redistribution During Gate Oxidation Including Transient-Enhanced Diffusion Caused by Implantation Damage (2000)
  • Eikyu Katsumi ID: 9000401715111

    Articles in CiNii:1

    • Modified Gate Re-Oxidation Technology for High-Performance Embedded Dynamic RAM by Self-Adjusted Gate Bird's Beak (2003)
  • Eikyu Katsumi ID: 9000401786504

    Articles in CiNii:1

    • Temperature Coefficient of Threshold Voltage in High-kMetal Gate Transistors with Various TiN and Capping Layer Thicknesses (2010)
  • Eikyu Katsumi ID: 9000401795601

    Articles in CiNii:1

    • 2011-04-20 (2011)
  • Eikyu Katsumi ID: 9000401996476

    Articles in CiNii:1

    • 2011-04-01 (2011)
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