Search Results1-20 of  36

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  • EIMORI Takahisa ID: 9000001496372

    Renesas Technology Corporation, Wafer Process Engineering Development Department (2005 from CiNii)

    Articles in CiNii:1

    • Suppression of Boron Penetration from Source/Drain-Extension to Improve Gate Leakage Characteristics and Gate-Oxide Reliability for 65-nm Node CMOS and Beyond (2005)
  • EIMORI Takahisa ID: 9000002172837

    Research Department 1, Semiconductor Leading Edge Technologies, Inc. (2006 from CiNii)

    Articles in CiNii:1

    • Hf and N Release from HfSiON in High-Temperature Annealing Induced by Oxygen Incorporation (2006)
  • EIMORI Takahisa ID: 9000002175624

    Semiconductor Leading Edge Technologies, Inc. (2007 from CiNii)

    Articles in CiNii:1

    • Performance and Reliability Improvement by Optimized Nitrogen Content of TaSiNx Metal Gate in Metal/HfSiON nFETs (2007)
  • EIMORI Takahisa ID: 9000004813748

    ULSI Development Center, Mitsubishi Electric Corporation (1999 from CiNii)

    Articles in CiNii:3

    • Features of SOI DRAM's and their Potential for Low-Voltage and/or Giga-Bit Scale DRAM's (1996)
    • Analysis and Optimization of Floating Body Cell Operation for High-Speed SOI-DRAM (1999)
    • Disk-Shaped Stacked Capacitor Cell for 256 Mb Dynamic Random-Access Memory (1994)
  • EIMORI Takahisa ID: 9000006459180

    ULSI Development Center, Mitsubishi Electric Corporation (2002 from CiNii)

    Articles in CiNii:1

    • Saturation Phenomenon of Stress-Induced Gate Leakage Current (2002)
  • EIMORI Takahisa ID: 9000015734684

    ULSI Development Center, Mitsubishi Electric Corporation (2003 from CiNii)

    Articles in CiNii:1

    • Modified Gate Re-Oxidation Technology for High-Performance Embedded Dynamic RAM by Self-Adjusted Gate Bird's Beak (2003)
  • EIMORI Takahisa ID: 9000107305913

    ULSI Development Center, Mitsubishi Electric Corporation (2003 from CiNii)

    Articles in CiNii:1

    • Improvement of Surface Morphology of Epitaxial Silicon Film for Elevated Source/Drain Ultrathin Silicon-on-Insulator Complementary-Metal-Oxide-Semiconductor Devices (2003)
  • EIMORI Takahisa ID: 9000107343855

    Process Technology Development Division, Renesas Technology Corp. (2005 from CiNii)

    Articles in CiNii:1

    • Novel Shallow Trench Isolation Process from Viewpoint of Total Strain Process Design for 45nm Node Devices and Beyond (2005)
  • EIMORI Takahisa ID: 9000107388596

    Advanced Device Development Department, Renesas Technology Corporation (2004 from CiNii)

    Articles in CiNii:1

    • W-Polymetal Gate with Low W/Poly-Si Interface Resistance for High-Speed/High-Density Embedded Memory (2004)
  • Eimori Takahisa ID: 9000052232472

    Articles in CiNii:1

    • Universal Correlation between Flatband Voltage and Electron Mobility in TiN/HfSiON Devices with MgO or La2O3Incorporation and Stack Variation (2008)
  • Eimori Takahisa ID: 9000073770317

    Articles in CiNii:1

    • Hole Mobility Enhancement Caused by Gate-Induced Vertical Strain in Gate-First Full-Metal High-kP-Channel Field Effect Transistors Using Ion-Beam W (2009)
  • Eimori Takahisa ID: 9000252956998

    LSI R & D Laboratory, Mitsubishi Electric Corporation (1985 from CiNii)

    Articles in CiNii:1

    • Hot Electron Improvement in MOS RAM's Based on Epitaxial Substrate (1985)
  • Eimori Takahisa ID: 9000252959702

    LSI R & D Laboratory, Mitsubishi Electric Corporation (1987 from CiNii)

    Articles in CiNii:1

    • X-Ray Lithography Using Chlorinated Polymethylstyrene (CPMS) as a Negative X-Ray Resist (1987)
  • Eimori Takahisa ID: 9000258123946

    ULSI Laboratory, Mitsubishi Electric Corporation, 4–1 Mizuhara, Itami, Hyogo 664 (1994 from CiNii)

    Articles in CiNii:1

    • Disk-Shaped Stacked Capacitor Cell for 256 Mb Dynamic Random-Access Memory (1994)
  • Eimori Takahisa ID: 9000258161176

    ULSI Development Center, Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami, Hyogo 664-8641, Japan (2002 from CiNii)

    Articles in CiNii:1

    • Saturation Phenomenon of Stress-Induced Gate Leakage Current. (2002)
  • Eimori Takahisa ID: 9000258166280

    ULSI Development Center, Mitsubishi Electric Corporation (2003 from CiNii)

    Articles in CiNii:1

    • Improvement of Surface Morphology of Epitaxial Silicon Film for Elevated Source/Drain Ultrathin Silicon-on-Insulator Complementary-Metal-Oxide-Semiconductor Devices (2003)
  • Eimori Takahisa ID: 9000258166493

    ULSI Development Center, Mitsubishi Electric Corporation (2003 from CiNii)

    Articles in CiNii:1

    • Modified Gate Re-Oxidation Technology for High-Performance Embedded Dynamic RAM by Self-Adjusted Gate Bird's Beak (2003)
  • Eimori Takahisa ID: 9000258180442

    Renesas Technology Corperation, Wafer Process Engineering Development Department (2005 from CiNii)

    Articles in CiNii:1

    • Suppression of Boron Penetration from Source/Drain-Extension to Improve Gate Leakage Characteristics and Gate-Oxide Reliability for 65-nm Node CMOS and Beyond (2005)
  • Eimori Takahisa ID: 9000258180454

    Process Technology Development Division, Renesas Technology Corp. (2005 from CiNii)

    Articles in CiNii:1

    • Novel Shallow Trench Isolation Process from Viewpoint of Total Strain Process Design for 45nm Node Devices and Beyond (2005)
  • Eimori Takahisa ID: 9000392711636

    Articles in CiNii:1

    • Hot Electron Improvement in MOS RAM’s Based on Epitaxial Substrate (1985)
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