Search Results1-20 of  54

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  • FUJIEDA Shinji ID: 9000404508794

    System Devices Research Laboratories, NEC Corporation (2005 from CiNii)

    Articles in CiNii:1

    • Microscopic characterization of point defects in silicon oxynitride films (2005)
  • FUJIEDA Shinji ID: 9000001719765

    Silicon Systems Research Laboratories System Devices and Fundamental Research, NEC Corporation (2000 from CiNii)

    Articles in CiNii:1

    • Spin-Dependent Trap-Assisted Tunneling Current in Ultra-Thin Gate Dielectrics (2000)
  • FUJIEDA Shinji ID: 9000001877756

    Department of Internal Medicine, Division of Gastroenterology, Jichi Medical School (2005 from CiNii)

    Articles in CiNii:1

    • ESD IN THE COLON (2005)
  • FUJIEDA Shinji ID: 9000002166178

    System Devices Research Laboratories, NEC Corp. (2004 from CiNii)

    Articles in CiNii:3

    • 1.2nm HfSiON/SiON stacked gate insulators for 65nm-node MISFETs (2004)
    • Influences of Traps within HfSiON Bulk on Positive- and Negative-Bias Temperature Instability of HfSiON Gate Stacks (2004)
    • Breakdown Mechanisms and Lifetime Prediction for 90nm-node Low-power HfSiON/SiO_2 CMOSFETs (2004)
  • FUJIEDA Shinji ID: 9000005917044

    Silicon Systems Research Laboratories, NEC Corporation (2001 from CiNii)

    Articles in CiNii:1

    • Mechanism of Leakage Current Reduction by Adding WO_3 to Crystallized Ta_2O_5 (2001)
  • FUJIEDA Shinji ID: 9000005924997

    Silicon Systems Research Laboratories, System Devices and Fundamental Research, NEC Corporation (2000 from CiNii)

    Articles in CiNii:1

    • Paramagnetic Defects Related to Positive Charges in Silicon Oxynitride Films (2000)
  • FUJIEDA Shinji ID: 9000006838100

    Nano Electronics Research Laboratories, NEC Corporation (2008 from CiNii)

    Articles in CiNii:2

    • A Ta_2O_5 Solid-electrolyte Switch with Improved Reliability (2008)
    • A Ta_2O_5 Solid-electrolyte Switch with Improved Reliability (2008)
  • FUJIEDA Shinji ID: 9000107334826

    Silicon Systems Research Laboratories, System Devices and Fundamental Research, NEC Corporation (2001 from CiNii)

    Articles in CiNii:1

    • Spin-Dependent Trap-Assisted Tunneling Current in Ultra-Thin Gate Dielectrics (2001)
  • FUJIEDA Shinji ID: 9000107344101

    System Devices Research Laboratories, NEC Corporation (2005 from CiNii)

    Articles in CiNii:1

    • 1.2nm HfSiON/SiON Stacked Gate Insulators for 65-nm-Node MISFETs (2005)
  • FUJIEDA Shinji ID: 9000107344131

    System Devices Research Laboratories, NEC Corporation (2005 from CiNii)

    Articles in CiNii:1

    • Breakdown Mechanisms and Lifetime Prediction for 90-nm-Node Low-Power HfSiON/SiO_2 CMOSFETs (2005)
  • FUJIEDA Shinji ID: 9000107344264

    System Devices Research Laboratories, NEC Corporation (2005 from CiNii)

    Articles in CiNii:1

    • Influence of Charge Traps within HfSiON Bulk on Positive and Negative Bias Temperature Instability of HfSiON Gate Stacks (2005)
  • FUJIEDA Shinji ID: 9000252915656

    Microelectronics Research Laboratories, NEC Corporation (1994 from CiNii)

    Articles in CiNii:1

    • Relation between Schottky Barrier Height and Crystallographic Alignment at Al/Si Interfaces. (1994)
  • Fujieda Shinji ID: 9000252762786

    Fundamental Research Laboratories, NEC Corporation (1990 from CiNii)

    Articles in CiNii:1

    • Control of the Electrical Properties of AlN/thin-a-Si/GaAs MIS Diodes by GaAs Surface Pretreatments (1990)
  • Fujieda Shinji ID: 9000252954571

    Department of Applied Physics, Faculty of Engineering, The University of Tokyo (1984 from CiNii)

    Articles in CiNii:1

    • Diffusion of Defects Introduced into CdS Crystals by Electron Beam Annealing (1984)
  • Fujieda Shinji ID: 9000252958841

    Fundamental Research Laboratories, NEC Corporation (1986 from CiNii)

    Articles in CiNii:1

    • Low Temperature Growth of GaN and AlN on GaAs Utilizing Metalorganics and Hydrazine (1986)
  • Fujieda Shinji ID: 9000252959968

    Fundamental Research Laboratories, NEC Corporation (1987 from CiNii)

    Articles in CiNii:1

    • Growth Characterization of Low-Temperature MOCVD GaN—Comparison between N<SUB>2</SUB>H<SUB>4</SUB> and NH<SUB>3</SUB>— (1987)
  • Fujieda Shinji ID: 9000252966237

    Fundamental Research Laboratories, NEC Corporation (1988 from CiNii)

    Articles in CiNii:1

    • Improvement of the Electrical Properties of the AlN/GaAs MIS System and Their Thermal Stability by GaAs Surface Stoichiometry Control (1988)
  • Fujieda Shinji ID: 9000252967588

    Fundamental Research Laboratories, NEC Corporation (1988 from CiNii)

    Articles in CiNii:1

    • Interfacial Superstructure of AlN/n-GaAs(001) System Fabricated by Metalorganic Chemical Vapor Deposition (1988)
  • Fujieda Shinji ID: 9000252969664

    Fundamental Research Laboratories, NEC Corporation (1989 from CiNii)

    Articles in CiNii:1

    • Effects of InP Surface Treatment on the Electrical Properties and Structures of AlN/n-InP Interface (1989)
  • Fujieda Shinji ID: 9000252974141

    Fundamental Research Laboratories, NEC Corporation (1990 from CiNii)

    Articles in CiNii:1

    • Thermal Stability of the AlN/a-Si/GaAs MIS Diodes with Different GaAs Surface Stoichiometry (1990)
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