Search Results1-20 of  23

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  • FUJINO Toshiaki ID: 9000003035225

    Fac. Agr., Tohoku Univ. (1972 from CiNii)

    Articles in CiNii:1

    • Effect of Gibberellic Acid Treatment on the Growth and Yield of Rice Plant (1972)
  • FUJINO Toshiaki ID: 9000015563503

    Department of Elecronic Engineering, Graduate School of Engineering, Osaka University (2003 from CiNii)

    Articles in CiNii:1

    • Thermal Stability in the Morphology of Ge Films on Si(001) Grown by Hydrogen-Surfactant-Mediated Epitaxy (2003)
  • FUJINO Toshiaki ID: 9000020104265

    Department of Electronic Engineering, Graduate School of Engineering, Osaka University (2001 from CiNii)

    Articles in CiNii:1

    • サマリー・アブストラクト (2001)
  • FUJINO Toshiaki ID: 9000107327763

    Department of Electronic Engineering,Graduate School of Engineering, Osaka University (2003 from CiNii)

    Articles in CiNii:1

    • Quantitative Anaysis of Hydrogen-Induced Si Segregation on Ge-Covered Si(001) Surface (2003)
  • FUJINO Toshiaki ID: 9000257982442

    Department of Electronic Engineering, Graduate School of Engineering, Osaka University (2002 from CiNii)

    Articles in CiNii:1

    • In Situ Monitoring of Surface Processes in a Gas Phase Atmosphere by Use of Ion Scattering and Recoiling Spectroscopy. Hydrogen-Surfactant Mediated Epitaxy of Ge on Si(001).:—Hydrogen-Surfactant Mediated Epitaxy of Ge on Si(001)— (2002)
  • Fujino Toshiaki ID: 9000003429546

    Department of Electronic Engineering, Graduate School of Engineering, Osaka University (2002 from CiNii)

    Articles in CiNii:5

    • Structural Change Process of Si(100)4×3-In Surface Phase Induced by Atomic Hydrogen Interaction (1999)
    • Real Time Monitoring of Ge Thin Film Growth on Si(001) Surface in Atomic Hydrogen Atmosphere using Ion Scattering Sspectroscopy (2001)
    • In-situ Observation of Ge Thin-Film Growth on Hydrogen Terminated Si(001) Surface by Low Energy Ion Scattering and Recoiling Spectroscopy (2001)
  • Fujino Toshiaki ID: 9000258146490

    Department of Electronic Engineering, Faculty of Engineering, Osaka University, 2–1 Yamadaoka, Suita, Osaka 565–0871, Japan (1999 from CiNii)

    Articles in CiNii:1

    • Adsorption of H on the Ge/Si(001) Surface as Studied by Time-of-Flight Elastic Recoil Detection Analysis and Coaxial Impact Collision Ion Scattering Spectroscopy. (1999)
  • Fujino Toshiaki ID: 9000258153161

    Department of Electronic Engineering, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan (2000 from CiNii)

    Articles in CiNii:1

    • Adsorption of Atomic Hydrogen on Ag-Covered 6H-SiC(0001) Surface. (2000)
  • Fujino Toshiaki ID: 9000258154695

    Department of Electronic Engineering, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan (2001 from CiNii)

    Articles in CiNii:1

    • Hydrogen Segregation and Its Detrimental Effect in Epitaxial Growth of Ge Thin Film on Hydrogen-Terminated Si(001) Surface. (2001)
  • Fujino Toshiaki ID: 9000258156829

    Department of Electronic Engineering, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan (2001 from CiNii)

    Articles in CiNii:1

    • Coaxial Impact-Collision Ion Scattering Spectroscopy and Time-of-Flight Elastic Recoil Detection Analysis for In Situ Monitoring of Surface Processes in Gas Phase Atmosphere. (2001)
  • Fujino Toshiaki ID: 9000258160634

    Department of Electronic Engineering, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan (2002 from CiNii)

    Articles in CiNii:1

    • Influence of Mn Incorporation on Molecular Beam Epitaxial Growth of GaMnN Film. (2002)
  • Fujino Toshiaki ID: 9000258164813

    Department of Electronic Engineering, Graduate School of Engineering, Osaka University (2003 from CiNii)

    Articles in CiNii:1

    • Thermal Stability in the Morphology of Ge Films on Si(001) Grown by Hydrogen-Surfactant-Mediated Epitaxy. (2003)
  • Fujino Toshiaki ID: 9000258167168

    Department of Electronic Engineering, Graduate School of Engineering, Osaka University (2003 from CiNii)

    Articles in CiNii:1

    • Quantitative Analysis of Hydrogen-Induced Si Segregation on Ge-Covered Si(001) Surface (2003)
  • Fujino Toshiaki ID: 9000401678947

    Articles in CiNii:1

    • Adsorption of H on the Ge/Si(001) Surface as Studied by Time-of-Flight Elastic Recoil Detection Analysis and Coaxial Impact Collision Ion Scattering Spectroscopy (1999)
  • Fujino Toshiaki ID: 9000401680533

    Articles in CiNii:1

    • Total Cross Section of Electron Stimulated Desorption of Hydrogen from Hydrogen-Terminated Ge/Si(001) as Observed by Time of Flight Elastic Recoil Detection Analysis (1999)
  • Fujino Toshiaki ID: 9000401690476

    Articles in CiNii:1

    • Adsorption of Atomic Hydrogen on Ag-Covered 6H-SiC(0001) Surface (2000)
  • Fujino Toshiaki ID: 9000401692497

    Articles in CiNii:1

    • 2000-11-15 (2000)
  • Fujino Toshiaki ID: 9000401702747

    Articles in CiNii:1

    • Hydrogen Segregation and Its Detrimental Effect in Epitaxial Growth of Ge Thin Film on Hydrogen-Terminated Si(001) Surface (2001)
  • Fujino Toshiaki ID: 9000401703797

    Articles in CiNii:1

    • Coaxial Impact-Collision Ion Scattering Spectroscopy and Time-of-Flight Elastic Recoil Detection Analysis for In Situ Monitoring of Surface Processes in Gas Phase Atmosphere (2001)
  • Fujino Toshiaki ID: 9000401712886

    Articles in CiNii:1

    • Influence of Mn Incorporation on Molecular Beam Epitaxial Growth of GaMnN Film (2002)
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