Search Results1-20 of  61

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  • FUKATSU Susumu ID: 9000025068963

    Articles in CiNii:1

    • Recombination Dynamics of High-Density Photocarriers in Type-Ⅱ Ge/Si Quantum Dots (2012)
  • FUKATSU Susumu ID: 9000002167811

    Graduate School of Arts and Sciences, The University of Tokyo (2004 from CiNii)

    Articles in CiNii:1

    • Diminished nonradiative recombination in near-surface pseudomorphic Si_<1-x>Ge_x/Si quantum wells (2004)
  • FUKATSU Susumu ID: 9000005566988

    Research Center for Advanced Science and Technology (RCAST), The University of Tokyo:(Present address)Department of Pure and Applied Sciences, The University of Tokyo (1995 from CiNii)

    Articles in CiNii:1

    • Si/1ML-Ge/Si(001) Interface Structure Characterized by Surface X-Ray Diffraction and X-Ray Standing-Wave Method (1995)
  • FUKATSU Susumu ID: 9000018186029

    Graduate School of Arts and Sciences, The University of Tokyo (2010 from CiNii)

    Articles in CiNii:1

    • Hybrid Laser Activation of Highly Concentrated Bi Donors in Wire-δ-Doped Silicon (2010)
  • FUKATSU Susumu ID: 9000107353362

    Graduate School of Arts and Sciences, The University of Tokyo (2010 from CiNii)

    Articles in CiNii:1

    • Control of Auger Recombination Rate in Si_<1-x>Ge_x/Si Heterostructures (2010)
  • Fukatsu Susumu ID: 9000023706759

    Articles in CiNii:1

    • Photoluminescence dynamics and reduced Auger recombination in Si1-xGex/Si superlattices under high-density photoexcitation (2009)
  • Fukatsu Susumu ID: 9000252763346

    Research Center for Advanced Science and Technology, The University of Tokyo (1990 from CiNii)

    Articles in CiNii:1

    • Fabrication of GaAs Ultrafine Gratings by Single-Layer-Masked SiCl<SUB>4</SUB> Reactive Ion Etching (1990)
  • Fukatsu Susumu ID: 9000252764784

    Research Center for Advanced Science and Technology (RCAST), The University of Tokyo (1991 from CiNii)

    Articles in CiNii:1

    • Strain Relaxation in MBE-Grown Si<SUB>1−<I>x</I></SUB>Ge<I><SUB>x</SUB></I>/Si(100) Heterostructures by Annealing (1991)
  • Fukatsu Susumu ID: 9000252766222

    Research Center for Advanced Science and Technology (RCAST), The University of Tokyo (1992 from CiNii)

    Articles in CiNii:1

    • Electroluminescence from Strained SiGe/Si Quantum Well Structures Grown by Solid Source Si Molecular Beam Epitaxy (1992)
  • Fukatsu Susumu ID: 9000252766248

    Research Center for Advanced Science and Technology (RCAST), The Universiry of Tokyo (1992 from CiNii)

    Articles in CiNii:1

    • Band-Edge Luminescence of Strained Si<I><SUB>x</SUB></I>Ge<SUB>1−<I>x</I></SUB>/Si Single Quantum Well Structures Grown on Si(111) by Si Molecular Beam Epitaxy (1992)
  • Fukatsu Susumu ID: 9000252766698

    Research Center for Advanced Science and Technology (RCAST), The University of Tokyo (1993 from CiNii)

    Articles in CiNii:1

    • Fast Lateral Transport of Excitons in a GaAs/AlGaAs Quantum Well (1993)
  • Fukatsu Susumu ID: 9000252959022

    Department of Applied Physics, Faculty of Engineering, The University of Tokyo (1986 from CiNii)

    Articles in CiNii:1

    • Anomalous Permeation of Low Energy Neon Atoms in Tungsten at Low Temperatures (1986)
  • Fukatsu Susumu ID: 9000252974303

    Research Center for Advanced Science and Technology, The University of Tokyo (1990 from CiNii)

    Articles in CiNii:1

    • Realization of Abrupt Interfaces in Si/Ge Superlattices by Suppressing Ge Surface Segregation with Submonolayer of Sb (1990)
  • Fukatsu Susumu ID: 9000252979175

    Research Center for Advanced Science and Technology, The University of Tokyo (1991 from CiNii)

    Articles in CiNii:1

    • Compositional Latching in GaAs<SUB>1−<I>x</I></SUB>P<I><SUB>x</SUB></I>/GaAs Metalorganic Vapor Phase Epitaxy (1991)
  • Fukatsu Susumu ID: 9000252980144

    Research Center for Advanced Science and Technology, The University of Tokyo (1991 from CiNii)

    Articles in CiNii:1

    • Dependence of Band Offsets on Elastic Strain in GaAs/GaAs<SUB>1−<I>x</I></SUB>P<I><SUB>x</SUB></I> Strained-Layer Single Quantum Wells (1991)
  • Fukatsu Susumu ID: 9000252982867

    Research Center for Advanced Science and Technology (RCAST), The University of Tokyo (1992 from CiNii)

    Articles in CiNii:1

    • Photogeneration and Transport of Carriers in Strained Si<SUB>1−<I>x</I></SUB>Ge<I><SUB>x</SUB></I>/Si Quantum Well Structures (1992)
  • Fukatsu Susumu ID: 9000252983884

    Research Center for Advanced Science and Technology (RCAST), The University of Tokyo (1992 from CiNii)

    Articles in CiNii:1

    • Nonlinear Optical Coefficient of AlAs Thin Film on GaAs Substrate (1992)
  • Fukatsu Susumu ID: 9000252984188

    Research Center for Advanced Science and Technology (RCAST), The University of Tokyo (1992 from CiNii)

    Articles in CiNii:1

    • Quantum Size Effect of Excitonic Band-Edge Luminescence in Strained Si<SUB>1−<I>x</I></SUB>Ge<I><SUB>x</SUB></I>/Si Single Quantum Well Structures Grown by Gas-Source Si Molecular Beam Epitaxy (1992)
  • Fukatsu Susumu ID: 9000252986005

    Research Center for Advanced Science and Technology (RCAST), The University of Tokyo (1993 from CiNii)

    Articles in CiNii:1

    • Luminescence from Strained Si<SUB>1−<I>x</I></SUB>Ge<I><SUB>x</SUB></I>/Si Quantum Wells Grown by Si Molecular Beam Epitaxy (1993)
  • Fukatsu Susumu ID: 9000252988020

    Research Center for Advanced Science and Technology (RCAST), The University of Tokyo (1993 from CiNii)

    Articles in CiNii:1

    • Band-Edge Photoluminescence of SiGe/Strained-Si/SiGe Type-II Quantum Wells on Si(100) (1993)
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