Search Results1-16 of  16

  • Fukuzawa Yasuhiro ID: 9000403910324

    Articles in CiNii:1

    • Photoresponse properties of Al/n-beta-FeSi2 Schottky diodes using beta-FeSi2 single crystals (2007)
  • FUKUZAWA Yasuhiro ID: 9000001235726

    Kankyo Semiconductors Co., Ltd. (2008 from CiNii)

    Articles in CiNii:2

    • Boron Doping for p-Type β-FeSi_2 Films by Sputtering Method (2004)
    • Doping of β-FeSi_2 Thin Film with Aluminum Prepared by Molecular Beam Epitaxy (2008)
  • FUKUZAWA Yasuhiro ID: 9000107332804

    Japan Science and Technology Corporation (JST) (2004 from CiNii)

    Articles in CiNii:1

    • Formation of β-FeSi_2 Microstructures by Reactive Ion Etching Using SF_6 Gas (2004)
  • FUKUZAWA Yasuhiro ID: 9000107383507

    Technology Development Department, System Engineers' Co., Ltd. (2005 from CiNii)

    Articles in CiNii:1

    • Arsenic Doping of n-Type β-FeSi_2 Films by Sputtering Method (2005)
  • FUKUZAWA Yasuhiro ID: 9000292201440

    Articles in CiNii:1

    • The development of Region Specific Projects in South Korea and its transformation. (2015)
  • FUKUZAWA Yasuhiro ID: 9000335566647

    Articles in CiNii:1

    • The Innovation System Model of Hanji Paper Industry Development in Korea;the case of Wonju,Gangwon-do. (2016)
  • FUKUZAWA Yasuhiro ID: 9000356490159

    Articles in CiNii:1

    • The significance and challenges of the Social Economy : Incubation Policy at Seoul Innovation Park. (2017)
  • FUKUZAWA Yasuhiro ID: 9000368932675

    Articles in CiNii:1

    • A Study on Applying CSV to SMEs through Network Approach (2017)
  • FUKUZAWA Yasuhiro ID: 9000398648817

    Articles in CiNii:1

    • An Overview of Regional Economy in Shinhidaka Town and Discussion on The Nijukken Road treated as The Industrial Heritage. (2018)
  • Fukuzawa Yasuhiro ID: 9000258171925

    Kankyo Semiconductors Co., Ltd., AIST Tsukuba West (2004 from CiNii)

    Articles in CiNii:1

    • Boron Doping for p-Type .BETA.-FeSi2 Films by Sputtering Method (2004)
  • Fukuzawa Yasuhiro ID: 9000258175778

    Japan Science and Technology Corporation (JST) (2004 from CiNii)

    Articles in CiNii:1

    • Formation of .BETA.-FeSi2 Microstructures by Reactive Ion Etching Using SF6 Gas (2004)
  • Fukuzawa Yasuhiro ID: 9000258184467

    Technology Development Department, System Engineers’ Co., Ltd., AIST Tsukuba West (2005 from CiNii)

    Articles in CiNii:1

    • Arsenic Doping of n-Type .BETA.-FeSi2 Films by Sputtering Method (2005)
  • Fukuzawa Yasuhiro ID: 9000401565318

    Articles in CiNii:1

    • Doping of β-FeSi2Thin Film with Aluminum Prepared by Molecular Beam Epitaxy (2008)
  • Fukuzawa Yasuhiro ID: 9000401728470

    Articles in CiNii:1

    • Formation of β-FeSi2Microstructures by Reactive Ion Etching Using SF6Gas (2004)
  • Fukuzawa Yasuhiro ID: 9000401733494

    Articles in CiNii:1

    • Boron Doping forp-Type β-FeSi2Films by Sputtering Method (2004)
  • Fukuzawa Yasuhiro ID: 9000401744030

    Articles in CiNii:1

    • Arsenic Doping ofn-Type β-FeSi2Films by Sputtering Method (2005)
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