Search Results1-20 of  423

  • Funakubo Hiroshi ID: 9000010281153

    Articles in CiNii:1

    • Development of a Novel Bismuth Precursor for MOCVD (2006)
  • Funakubo Hiroshi ID: 9000016040148

    Articles in CiNii:1

    • 技術資料 A Novel Ruthenium Precursor for MOCVD without Seed Ruthenium Layer (2003)
  • Funakubo Hiroshi ID: 9000024936534

    Articles in CiNii:1

    • Crystal Structure and Electrical Properties of Epitaxial BiFeO3 Thin Films Grown by Metal Organic Chemical Vapor Deposition (2005)
  • Funakubo Hiroshi ID: 9000024941004

    Articles in CiNii:1

    • Effect of grain size on mechanical properties of full-dense Pb(Zr,Ti)O3 ceramics (Special issue: Ferroelectric materials and their applications) (2010)
  • Funakubo Hiroshi ID: 9000024961379

    Articles in CiNii:1

    • Preparation of (001)-oriented CaBi4Ti4O15 and SrBi4Ti4O15 films using LaNiO3 nucleation layer on Pt-passivated Si wafer (Special issue: Ferroelectric materials and their applications) (2009)
  • Funakubo Hiroshi ID: 9000024961393

    Articles in CiNii:1

    • Effects of substrate clamping on electrical properties of polycrystalline piezoelectric films (Special issue: Ferroelectric materials and their applications) (2009)
  • Funakubo Hiroshi ID: 9000024961621

    Articles in CiNii:1

    • Characteristics of undoped and Mn-doped BiFeO3 films formed on Pt and SrRuO3/Pt electrodes by radio-frequency sputtering (Special issue: Ferroelectric materials and their applications) (2009)
  • Funakubo Hiroshi ID: 9000241433700

    Articles in CiNii:1

    • Laser Wavelength Effect on Size and Morphology of Silicon Nanoparticles Prepared by Laser Ablation in Liquid (2013)
  • FUNAKUBO HIROSHI ID: 9000391875834

    Tokyo Institute of Technology (2011 from CiNii)

    Articles in CiNii:1

    • Uniaxial crystal growth of LaNiO<SUB>3</SUB> film by chemical solution deposition (2011)
  • FUNAKUBO HIROSHI ID: 9000391875877

    TOKYO INSTITUTE OF TECHNOLOGY (2011 from CiNii)

    Articles in CiNii:1

    • Preparation of BiFeO<SUB>3</SUB>-Bi(Zn<SUB>1/2</SUB>Ti<SUB>1/2</SUB>)O<SUB>3</SUB> films by chemical solution deposition (2011)
  • FUNAKUBO HIROSHI ID: 9000391878099

    Tokyo Institute of Technology (2011 from CiNii)

    Articles in CiNii:1

    • Crystal Structure and Ferroelectric property of Epitaxial Rhombohedral Pb(Zr,Ti)O<SUB>3</SUB> Films (2011)
  • FUNAKUBO HIROSHI ID: 9000402089807

    Articles in CiNii:1

    • Laser Wavelength Effect on Size and Morphology of Silicon Nanoparticles Prepared by Laser Ablation in Liquid (2013)
  • FUNAKUBO HIROSHI ID: 9000402090267

    Articles in CiNii:1

    • Photovoltaic Properties of Si-Based Quantum-Dot-Sensitized Solar Cells Prepared Using Laser Plasma in Liquid (2014)
  • FUNAKUBO Hiroshi ID: 9000001098254

    Department of Innovative and Engineered Materials, Tokyo Institute of Technology (2003 from CiNii)

    Articles in CiNii:1

    • Characterization of Hafnium Oxide Thin Films by Source Gas Pulse Introduced Metalorganic Chemical Vapor Deposition Using Amino-Family Hf Precursors (2003)
  • FUNAKUBO Hiroshi ID: 9000001626768

    Department of Innovative and Engineered Materials, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology (2005 from CiNii)

    Articles in CiNii:1

    • Raman Spectroscopic Characterization of Tetragonal PbZr_xTi_<1-x>O_3 Thin Films : A Rapid Evaluation Method for c-Domain Volume (2005)
  • FUNAKUBO Hiroshi ID: 9000001814697

    Department of Innovative and Engineered Materials, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology (2006 from CiNii)

    Articles in CiNii:1

    • Growth Behavior of c-Axis-Oriented Epitaxial SrBi_2Ta_2O_9 Films on SrTiO_3 Substrates with Atomic Scale Step Structure (2006)
  • FUNAKUBO Hiroshi ID: 9000003634191

    Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology (2003 from CiNii)

    Articles in CiNii:13

    • Residual Strain in Epitaxially-grown PbTiO_3 and PZT Films Prepared on (100) MgO Substrates by MOCVD (1995)
    • Chemical vapor deposition. (1993)
    • 研究技術動向の一断面 (1993)
  • FUNAKUBO Hiroshi ID: 9000004779481

    Tokyo Institute of Technology, Int. Grad Sch. Sci. & Eng. (2009 from CiNii)

    Articles in CiNii:3

    • Preparation of SrBi_2Ta_2O_9 thin films by liquid delivery MOCVD method using RF plasma process (2009)
    • Characterization of HfO_2 Thin Films Grown on Silicon Substrates by Source Gas Pulse-Introduced MOCVD for Gate-Insulator Applications (2003)
    • Preparation of SrBi2Ta2O9 thin films by liquid delivery MOCVD method using RF plasma process (1999)
  • FUNAKUBO Hiroshi ID: 9000005602298

    Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology (1999 from CiNii)

    Articles in CiNii:1

    • Preparation of SrBi_2Ta_2O_9 Thin Films by Liquid-Delivery Metalorganic Chemical Vapor Deposition using a Double Alcoholate Source (1999)
  • FUNAKUBO Hiroshi ID: 9000005607897

    Application Laboratory, Analytical Department, Philips Japan, Ltd. (2000 from CiNii)

    Articles in CiNii:1

    • Low-Temperature Deposition of SrRuO_3 Thin Film Prepared by Metalorganic Chemical Vapor Deposition (2000)
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