Search Results1-20 of  79

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  • FUNATO Mitsuru ID: 9000404506833

    Department of Electronic Science and Engineering, Kyoto University (2011 from CiNii)

    Articles in CiNii:1

    • Development of phosphor-free white and multi-color light-emitting diodes (2011)
  • Funato Mitsuru ID: 9000019043795

    Articles in CiNii:1

    • Homoepitaxy and Photoluminescence Properties of (0001) AlN (2012)
  • Funato Mitsuru ID: 9000024967077

    Articles in CiNii:1

    • Nanoscopic Photoluminescence Properties of a Green-Emitting InGaN Single Quantum Well on a {2021} GaN Substrate Probed by Scanning Near-Field Optical Microscopy (2012)
  • Funato Mitsuru ID: 9000241877810

    Articles in CiNii:1

    • Remarkably Suppressed Luminescence Inhomogeneity in a (0001) InGaN Green Laser Structure (2013)
  • Funato Mitsuru ID: 9000242140119

    Articles in CiNii:1

    • Optical Gain Spectra of a (0001) InGaN Green Laser Diode (2013)
  • FUNATO Mitsuru ID: 9000380485217

    Articles in CiNii:1

    • Polar-plane-free faceted InGaN microstructures for highly efficient polychromatic emitters (レーザ・量子エレクトロニクス) (2017)
  • Funato Mitsuru ID: 9000403851232

    Articles in CiNii:1

    • Localized excitons in cubic Zn1-xCdxS lattice matched to GaAs (1994)
  • FUNATO Mitsuru ID: 9000005546417

    Department of Electronic Science and Engineering, Kyoto University (2000 from CiNii)

    Articles in CiNii:3

    • Growth Behavior of GaAs in Metalorganic Vapor Phase Epitaxy onto ZnSe (1994)
    • Formation of an Atomically Flat Surface of ZnSe on GaAs (001) by Metalorganic Vapor Phase Epitaxy (1997)
    • The Role of Growth Rates and Buffer Layer Structures for Quality Improvement of Cubic GaN Grown on GaAs (2000)
  • FUNATO Mitsuru ID: 9000019096226

    Department of Electronic Science and Engineering, Kyoto University (2012 from CiNii)

    Articles in CiNii:9

    • Blue, Green, and Amber InGaN/GaN Light-Emitting Diodes on Semipolar {1122} GaN Bulk Substrates (2006)
    • Monolithic Polychromatic Light-Emitting Diodes Based on InGaN Microfacet Quantum Wells toward Tailor-Made Solid-State Lighting (2008)
    • Weak Carrier/Exciton Localization in InGaN Quantum Wells for Green Laser Diodes Fabricated on Semi-Polar {2021} GaN Substrates (2010)
  • FUNATO Mitsuru ID: 9000107336638

    Department of Electronic Science and Engineering, Kyoto University (2010 from CiNii)

    Articles in CiNii:1

    • Experimental and Theoretical Considerations of Polarization Field Direction in Semipolar InGaN/GaN Quantum Wells (2010)
  • FUNATO Mitsuru ID: 9000107358246

    Department of Electronic Science and Engineering, Kyoto University (2011 from CiNii)

    Articles in CiNii:1

    • Optical gain spectra in semipolar {2021} oriented green InGaN LDs in comparison with (0001) LDs (2011)
  • FUNATO Mitsuru ID: 9000107359058

    Department of Electronic Science and Engineering, Kyoto University (2011 from CiNii)

    Articles in CiNii:1

    • Optical gain spectra in semipolar {2021} oriented green InGaN LDs in comparison with (0001) LDs (2011)
  • FUNATO Mitsuru ID: 9000107364814

    Department of Electronic Science and Engineering, Kyoto University (2012 from CiNii)

    Articles in CiNii:1

    • Homoepitaxy and Photoluminescence Properties of (0001) AlN (2012)
  • FUNATO Mitsuru ID: 9000238257985

    Department of Electronic Science and Engineering, Kyoto University (2012 from CiNii)

    Articles in CiNii:1

    • Nanoscopic Photoluminescence Properties of a Green-Emitting InGaN Single Quantum Well on a {2021} GaN Substrate Probed by Scanning Near-Field Optical Microscopy (2012)
  • FUNATO Mitsuru ID: 9000241154552

    Department of Electronic Science and Engineering, Kyoto University (2012 from CiNii)

    Articles in CiNii:1

    • Effects of internal field and potential inhomogeneity on the lasing properties of In GaN-based green laser diodes fabricated on(0001)polar substrates (2012)
  • FUNATO Mitsuru ID: 9000241154744

    Department of Electronic Science and Engineering, Kyoto University (2012 from CiNii)

    Articles in CiNii:1

    • Effects of internal field and potential inhomogeneity on the lasing properties of In GaN-based green laser diodes fabricated on(0001)polar substrates (2012)
  • FUNATO Mitsuru ID: 9000252845746

    京都大学 大学院工学研究科 (2012 from CiNii)

    Articles in CiNii:2

    • Tunable band discontinuity in ZnSe/GaAs heterovalent heterostructures (1997)
    • Enhancement of emission from InGaN QW by surface plasmon resonance with Alminium (2012)
  • FUNATO Mitsuru ID: 9000261681240

    Department of Electronic Science and Engineering, Kyoto University (2013 from CiNii)

    Articles in CiNii:1

    • Optical Properties of Highly Strained AlN Coherently Grown on 6H-SiC (0001) (2013)
  • FUNATO Mitsuru ID: 9000284629988

    Department of Electronic Science and Engineering, Kyoto University (2013 from CiNii)

    Articles in CiNii:1

    • A novel method for crystallizations of aluminum nitride (2013)
  • FUNATO Mitsuru ID: 9000284630108

    Department of Electronic Science and Engineering, Kyoto University (2013 from CiNii)

    Articles in CiNii:1

    • A novel method for crystallizations of aluminum nitride (2013)
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