Search Results1-20 of  28

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  • FURUKAWA AKIHIKO ID: 9000005266357

    Faculty of Pharmaceutical Sciences, Kumamoto University (1989 from CiNii)

    Articles in CiNii:1

    • Protective Effect of N-Benzyl-D-Glucamine Dithiocarbamate against Cadmium-Thionein-Induced Renal Damage in Rats (Proceedings of the 14th Symposium on Environmental Pollutants and Toxicology) (1989)
  • FURUKAWA AKIHIKO ID: 9000254595431

    Articles in CiNii:1

    • Protective Effect of N-Benzyl-D-Glucamine Dithiocarbamate against Cadmium-Thionein-Induced Renal Damage in Rats (Proceedings of the 14th Symposium on Environmental Pollutants and Toxicology) (1989)
  • FURUKAWA Akihiko ID: 9000000614682

    Kaken Pharmaceutical Co., Ltd. (2001 from CiNii)

    Articles in CiNii:1

    • Transport Mechanism of Basic Fibroblast Growth Factor through the Blood-Brain Barrier (2001)
  • FURUKAWA Akihiko ID: 9000004752584

    Articles in CiNii:21

    • 2.4-GHz 1.8-V RFCMOS Front-End Integrated Circuits (2002)
    • 高周波CMOSデバイスモデリング技術 (特集 光・高周波デバイス) (2004)
    • SiC Power Devices (2011)
  • FURUKAWA Akihiko ID: 9000004850334

    Advanced Technology R & D Center, Mitsubishi Electric Corporation (2002 from CiNii)

    Articles in CiNii:2

    • 2.4-GHz-Band CMOS RF Front-End Building Blocks at a 1.8-V Supply (2002)
    • Design and Experimental Results of CMOS Low-Noise/Driver MMIC Amplifiers for Use in 2.4-GHz and 5.2-GHz Wireless Communications (2002)
  • FURUKAWA Akihiko ID: 9000005235506

    Advanced Technology R&D Center, Mitsubishi Electric Corporation (1999 from CiNii)

    Articles in CiNii:5

    • Noticeable Enhancement of Edge Effect in Short Channel Characteristics of Trench-Isolated MOSFETs (1998)
    • Metabolism of the Intravenously Administered Recombinant Human Basic Fibroblast Growth Factor, Trafermin, in Liver and Kidney: Degradation Implicated in Its Selective Localization to the Fenestrated Type Microvasculatures (1997)
    • Advantage of Shallow Trench Isolation over Local Oxidation of Silicon on Alignment Tolerance (1999)
  • FURUKAWA Akihiko ID: 9000005588008

    Advanced Technology R&D Center, Mitsubishi Electric Corporation (1998 from CiNii)

    Articles in CiNii:1

    • High Performance 0.2μm Dual Gate Complementary MOS Technologies by Suppression of Transient-Enhanced-Diffusion using Rapid Thermal Annealing (1998)
  • FURUKAWA Akihiko ID: 9000107305926

    Advanced Technology R&D Center, Mitsubishi Electric Corporation (2003 from CiNii)

    Articles in CiNii:1

    • An Electrostatic-Discharge (ESD) Protection Device with Low Parasitic Capacitance Utilizing a Depletion-Later-Extended Transistor (DET) for RF CMOS ICs (2003)
  • FURUKAWA Akihiko ID: 9000252831398

    Kaken Pharmaceutical Co., Ltd. (2001 from CiNii)

    Articles in CiNii:1

    • Transport Mechanism of Basic Fibroblast Growth Factor through the Blood-Brain Barrier. (2001)
  • FURUKAWA Akihiko ID: 9000253263124

    Kaken Pharmaceutical Co., Ltd. (2000 from CiNii)

    Articles in CiNii:1

    • TRANSPORT MECHANISM OF BASIC FIBROBLAST GROWTH FACTOR (bFGF) THROUGH THE BLOOD-BRAIN BARRIER (2000)
  • FURUKAWA Akihiko ID: 9000253320826

    東京芝浦電気株式会社総合研究所 (1977 from CiNii)

    Articles in CiNii:1

    • Deformation of Si Wafer (1977)
  • FURUKAWA Akihiko ID: 9000254720722

    Dept. of Urban and Environ. Eng., Graduate School of Eng., Hokkaido University (2004 from CiNii)

    Articles in CiNii:1

    • Relation between arsenic and other metals and ions in groundwater in Bangladesh (2004)
  • FURUKAWA Akihiko ID: 9000256541166

    Dept. of Electrical Engineering, Faculty of Engineering, Keio Univ. (1972 from CiNii)

    Articles in CiNii:1

    • Two-Part Body Plethysmograph:Measurement of Rib-cage and Abdominal Volume Changes during Breathing and the Correlation to the Physical Characteristics (1972)
  • Furukawa Akihiko ID: 9000004966703

    ULSI Research Laboratories, Research and Development Center, Toshiba Corporation (1995 from CiNii)

    Articles in CiNii:12

    • HDTV対応--アモルファスSi積層型200万画素CCD (高画素化進むCCDイメ-ジセンサ--HDTV対応200万画素CCDも登場) (1988)
    • Analyze of a-Si:H film properties prepared by a Laminar Flow Photo-CVD Method (1995)
    • Two Million Pixel CCD Image Sensor with an Amorphous Silicon Photo Conversion Layer (1988)
  • Furukawa Akihiko ID: 9000252971744

    Toshiba ULSI Research Center (1990 from CiNii)

    Articles in CiNii:1

    • A Predischarge Doping Method for Hydrogenated Amorphous Silicon Films (1990)
  • Furukawa Akihiko ID: 9000258140700

    Advanced Technology R&D Center, Mitsubishi Electric Corporation, Itami, Hyogo 664, Japan (1998 from CiNii)

    Articles in CiNii:1

    • High Performance 0.2 .MU.m Dual Gate Complementary MOS Technologies by Suppression of Transient-Enhanced-Diffusion using Rapid Thermal Annealing. (1998)
  • Furukawa Akihiko ID: 9000258166340

    Advanced Technology R&D Center, Mitsubishi Electric Corporation (2003 from CiNii)

    Articles in CiNii:1

    • An Electrostatic-Discharge(ESD) Protection Device with Low Parasitic Capacitance Utilizing a Depletion-Layer-Extended Transistor(DET) for RF CMOS ICs (2003)
  • Furukawa Akihiko ID: 9000283158443

    Articles in CiNii:1

    • In-plane Orientation and Coincidence Site Lattice Relation of Bi2Sr2CaCu2Ox Thin Films Formed on Highly Mismatched (001) YAG Substrates. (1994)
  • Furukawa Akihiko ID: 9000392715835

    Articles in CiNii:1

    • A Predischarge Doping Method for Hydrogenated Amorphous Silicon Films (1990)
  • Furukawa Akihiko ID: 9000401617355

    Articles in CiNii:1

    • A Predischarge Doping Method for Hydrogenated Amorphous Silicon Films (1990)
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