Search Results1-12 of  12

  • FURUKAWA Taisuke ID: 9000107325776

    Advanced Technology R&D Center, Mitsubishi Electric Co. (2005 from CiNii)

    Articles in CiNii:1

    • Fatigueless Ferroelectric Capacitors with Ruthenium Bottom and Top Electrodes Formed by Metalorganic Chemical Vapor Deposition (2005)
  • FURUKAWA Taisuke ID: 9000107334234

    Advanced Technology R&D Center, Mitsubishi Electric Corporation (2001 from CiNii)

    Articles in CiNii:1

    • A Dual-Gate Complementary Metal-Oxide-Semiconductor Technology with Novel Self-Aligned Pocket Implantation which Takes Advantage of Elevated Source/Drain Configurations (2001)
  • Furukawa Taisuke ID: 9000258147921

    Advanced Technology R&D Center, Mitsubishi Electric Corporation, 8–1–1 Tsukaguchi–Honmachi, Amagasaki, Hyogo 661–8661, Japan (1999 from CiNii)

    Articles in CiNii:1

    • Si Deposition into Fine Contact Holes by Ultrahigh-Vacuum Chemical Vapor Deposition. (1999)
  • Furukawa Taisuke ID: 9000258150135

    Advanced Technology R&D Center, Mitsubishi Electric Corporation, 4-1, Mizuhara, Itami, Hyogo 664-8641, Japan (2000 from CiNii)

    Articles in CiNii:1

    • Parasitic Resistance Reduction in Deep Submicron Dual-Gate Transistors with Partially Elevated Source/Drain Extension Regions Fabricated by Complementary Metal-Oxide-Semiconductor Technologies. (2000)
  • Furukawa Taisuke ID: 9000401681605

    Articles in CiNii:1

    • Si Deposition into Fine Contact Holes by Ultrahigh-Vacuum Chemical Vapor Deposition (1999)
  • Furukawa Taisuke ID: 9000401682579

    Articles in CiNii:1

    • Significant Effects of As Ion Implantation on Si-selective Epitaxy by Ultrahigh Vacuum Chemical Vapor Deposition (1999)
  • Furukawa Taisuke ID: 9000401690068

    Articles in CiNii:1

    • Parasitic Resistance Reduction in Deep Submicron Dual-Gate Transistors with Partially Elevated Source/Drain Extension Regions Fabricated by Complementary Metal-Oxide-Semiconductor Technologies (2000)
  • Furukawa Taisuke ID: 9000401692268

    Articles in CiNii:1

    • Selective Epitaxial Growth by Ultrahigh-Vacuum Chemical Vapor Deposition with Alternating Gas Supply of Si2H6and Cl2 (2000)
  • Furukawa Taisuke ID: 9000401697826

    Articles in CiNii:1

    • A Dual-Gate Complementary Metal-Oxide-Semiconductor Technology with Novel Self-Aligned Pocket Implantation which Takes Advantage of Elevated Source/Drain Configurations (2001)
  • Furukawa Taisuke ID: 9000401701325

    Articles in CiNii:1

    • A Chemical Mechanism for Determining the Influence of Boron on Silicon Epitaxial Growth (2001)
  • Furukawa Taisuke ID: 9000401702562

    Articles in CiNii:1

    • Surface Defect Formation in Epitaxial Si Grown on Boron-Doped Substrates by Ultrahigh Vacuum Chemical Vapor Deposition (2001)
  • Furukawa Taisuke ID: 9000401744232

    Articles in CiNii:1

    • Fatigueless Ferroelectric Capacitors with Ruthenium Bottom and Top Electrodes Formed by Metalorganic Chemical Vapor Deposition (2005)
Page Top