Search Results1-6 of  6

  • FURUMURA Yuji ID: 9000000677541

    Fujitsu Limited (1993 from CiNii)

    Articles in CiNii:2

    • Outgassing Properties of CVD-SiO_2 Films (1993)
    • SiHCl3-C3H8-H2系から成長させたβ-SiC膜の特性 (1986)
  • FURUMURA Yuji ID: 9000004963621

    Articles in CiNii:3

    • Al CVD Technology using MPA (methylpyrrolidine alane) (2003)
    • Evaluation of CMP-Cu interconnects prepared with CVD and with sputter-reflow (1996)
    • Crystallization of Amorphous Silicon Film on Glass Substrate by Heated Gas Beam Annealing (2009)
  • FURUMURA Yuji ID: 9000005654388

    Advanced Technology Division, Fujitsu Ltd. (1994 from CiNii)

    Articles in CiNii:1

    • RuO_2 Thin Films as Bottom Electrodes for High Dielectric Constant Materials (1994)
  • Furumura Yuji ID: 9000258122900

    Advanced Technology Division, Fujitsu Ltd., 1015 Kamikodanaka, Nakahara–ku, Kawasaki 211 (1994 from CiNii)

    Articles in CiNii:1

    • RuO2 Thin Films as Bottom Electrodes for High Dielectric Constant Materials. (1994)
  • Furumura Yuji ID: 9000401647391

    Articles in CiNii:1

    • $\bf RuO_{2}$ Thin Films as Bottom Electrodes for High Dielectric Constant Materials (1994)
  • Furumura Yuji ID: 9000401967420

    Philtech Inc., Bunkyo, Tokyo 113-0033, Japan (2014 from CiNii)

    Articles in CiNii:1

    • Elastic Softening of Surface Acoustic Wave Caused by Vacancy Orbital in Silicon Wafer (2014)
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