Search Results1-5 of  5

  • FENG Gaoming ID: 9000001908835

    Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences (2007 from CiNii)

    Articles in CiNii:1

    • High Speed Chalcogenide Random Access Memory Based on Si_2Sb_2Te_5 (2007)
  • FENG Gaoming ID: 9000107347600

    Nanotechnology Laboratory, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences (2007 from CiNii)

    Articles in CiNii:1

    • Multilevel Data Storage Characteristics of Phase Change Memory Cell with Doublelayer Chalcogenide Films (Ge_2Sb_2Te_5 and Sb_2Te_3) (2007)
  • Feng Gaoming ID: 9000401765297

    Articles in CiNii:1

    • High Speed Chalcogenide Random Access Memory Based on Si2Sb2Te5 (2007)
  • Feng Gaoming ID: 9000401765305

    Articles in CiNii:1

    • Multilevel Data Storage Characteristics of Phase Change Memory Cell with Doublelayer Chalcogenide Films (Ge2Sb2Te5and Sb2Te3) (2007)
  • Feng Gaoming ID: 9000402012071

    Articles in CiNii:1

    • Optimization of Anomalous Cells with High SET Resistance in Phase Change Memory Arrays (2013)
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