Search Results1-8 of  8

  • FUJINAGA Masato ID: 9000000510091

    ULSI Laboratory, Mitsubishi Electric Corporation (1993 from CiNii)

    Articles in CiNii:3

    • An algorithm of three-dimensional topography simulation and the applications (1993)
    • プロセス/デバイスシミュレ-ション (VLSI<特集>) (1988)
    • 3次元形状シミュレ-タ (三菱半導体事業30周年記念特集号) (1989)
  • FUJINAGA Masato ID: 9000004875039

    ULSI Research and Development Center, Mitsubishi Electric Corporation (2000 from CiNii)

    Articles in CiNii:3

    • 3-D Topography and Impurity Integrated Process Simulator (3-D MIPS) and Its Applications (1999)
    • Stable Solution Method for Viscoelastic Oxidation Including Stress-Dependent Viscosity (1996)
    • Simulation of Dopant Redistribution During Gate Oxidation Including Transient - Enhanced Diffusion Caused by Implantation Damage (2000)
  • FUJINAGA Masato ID: 9000253325761

    ULSI Laboratory, Mitsubishi Electric Corporation. (1993 from CiNii)

    Articles in CiNii:1

    • An algorithm of three-dimensional topography simulation and the applications (1993)
  • FUJINAGA Masato ID: 9000316689946

    Silvaco Japan Co., Ltd. (2015 from CiNii)

    Articles in CiNii:1

    • Advanced Simulation of Organic Light Emitting Devices (2015)
  • Fujinaga Masato ID: 9000242894380

    TCAD Department, Silvaco Japan Co., Ltd. (2013 from CiNii)

    Articles in CiNii:1

    • Simulation Techniques used in Atlas/Victory Device for GaN device simulations (2013)
  • Fujinaga Masato ID: 9000401657850

    Articles in CiNii:1

    • Stable Solution Method for Viscoelastic Oxidation Including Stress-Dependent Viscosity (1996)
  • Fujinaga Masato ID: 9000401688847

    Articles in CiNii:1

    • Simulation of Dopant Redistribution During Gate Oxidation Including Transient-Enhanced Diffusion Caused by Implantation Damage (2000)
  • Fujinaga Masato ID: 9000402029230

    Articles in CiNii:1

    • Switching characteristics of a 4H-SiC insulated-gate bipolar transistor with interface defects up to the nonquasi-static regime (2015)
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