Search Results1-20 of  116

  • Fujiwara Yasufumi ID: 9000025032298

    Articles in CiNii:1

    • Edge-light backlight unit using optically patterned film with plural light-emitting diodes placed on side as light source (2007)
  • FUJIWARA Yasufumi ID: 9000001289908

    Department of Materials Science and Engineering, Graduate School of Engineering, Osaka University (2004 from CiNii)

    Articles in CiNii:1

    • Photoluminescence around 1.54μm from Er-containing ZnO at Room Temperature (2004)
  • FUJIWARA Yasufumi ID: 9000002169612

    Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University (2005 from CiNii)

    Articles in CiNii:1

    • Investigation of β-FeSi_2/Si Heterostructures by Photoluminescence with Different Optical Configurations (2005)
  • FUJIWARA Yasufumi ID: 9000002173005

    Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University (2006 from CiNii)

    Articles in CiNii:1

    • Thermally Stable Carbon-Doped Silicon Oxide Films Deposited at Room Temperature (2006)
  • FUJIWARA Yasufumi ID: 9000002174719

    Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University (2006 from CiNii)

    Articles in CiNii:1

    • Characterization of Epitaxial Silicon Films Grown by Atmospheric Pressure Plasma Chemical Vapor Deposition at Low Temperatures (450-600℃) (2006)
  • FUJIWARA Yasufumi ID: 9000003213537

    Osaka Univ. (2009 from CiNii)

    Articles in CiNii:4

    • OMVPE growth and luminescence properties of rare-earth doped III-V semiconductors (2000)
    • 25pWJ-1 ESR study of Er-concentration dependence in photoluminescent material GaAs:Er,O (2008)
    • 25aXD-4 Photoluminescence measurement of GaAs:Er,O under high magnetic field (2009)
  • FUJIWARA Yasufumi ID: 9000003274844

    Institute of Multidisciplinary Research for Advanced Materials, Tohoku University (2002 from CiNii)

    Articles in CiNii:18

    • Nuclear Magnetic Resonance of Iron-Rich Fe-V Alloys (1975)
    • Effect of Electron Irradiation on Photoconductivity of CdS in the S-Atom Threshold Energy Region (1975)
    • Nuclear Magnetic Resonance of Fe^<57> in Iron-Rich Fe-V Alloys (1972)
  • FUJIWARA Yasufumi ID: 9000005583850

    Department of Materials Science and Engineering, Graduate School of Engineering, Nagoya University (1997 from CiNii)

    Articles in CiNii:1

    • Observation of Electric Fields at Surface and Interface of Doped GaAs/Semi-insulating GaAs Structures by Fast Fourier Transformed Photoreflectance (1997)
  • FUJIWARA Yasufumi ID: 9000015687554

    Department of Materials Science and Engineering, Graduate School of Engineering, Nagoya University (2003 from CiNii)

    Articles in CiNii:1

    • Room-Temperature 1.54μm Light Emission from Er,O-Codoped GaAs/GaInP Light-Emitting Diodes Grown by Low-Pressure Organometallic Vapor Phase Epitaxy (2003)
  • FUJIWARA Yasufumi ID: 9000016378311

    Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University (2009 from CiNii)

    Articles in CiNii:1

    • Room-Temperature Red Emission from a p-Type/Europium-Doped/n-Type Gallium Nitride Light-Emitting Diode under Current Injection (2009)
  • FUJIWARA Yasufumi ID: 9000018699501

    Course of Materials Science and Engineering, Graduate School of Engineering, Osaka University (2011 from CiNii)

    Articles in CiNii:1

    • ESD Robustness Improvement for Integrated DMOS Transistors-The Different Gate-Voltage Dependence of I_<t2> Between VDMOS and LDMOS Transistors (2011)
  • FUJIWARA Yasufumi ID: 9000019998223

    Articles in CiNii:1

    • Improvement of Crystalline Quality in GaAs Layer Grown on Thermal Cyclic Annealed SOS (2011)
  • FUJIWARA Yasufumi ID: 9000020179360

    Articles in CiNii:1

    • The Oxygen Stoichiometry in Superconductive Ceramic Er<sub>1</sub>Ba<sub>2</sub>Cu<sub>3</sub>O<sub><i>y</i></sub> (1988)
  • FUJIWARA Yasufumi ID: 9000107348816

    Department of Materials Science and Engineering, Nagoya University (2003 from CiNii)

    Articles in CiNii:1

    • Corss-Sectional Scanning Tunneling Microscopy Study of Interfacial Roughness in an InGaAs/InP Multiple Quantum Well Structure Grown by Metalorganic Vapor Phase Epitaxy (2003)
  • FUJIWARA Yasufumi ID: 9000107351057

    Course of Materials Science and Engineering, Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University (2007 from CiNii)

    Articles in CiNii:1

    • Edge-Light Backlight Unit Using Optically Patterned Film (2007)
  • FUJIWARA Yasufumi ID: 9000253323217

    Department of Electrical Engineering, Faculty of Engineering Science, Osaka University. (1985 from CiNii)

    Articles in CiNii:1

    • Characterization of Transition Metal Impurity in GaAs by Photoluminescence Method (1985)
  • FUJIWARA Yasufumi ID: 9000253324394

    Department of Electrical Engineering, Faculty of Engineering Science, Osaka University. (1989 from CiNii)

    Articles in CiNii:1

    • Characterization of High <i>T</i><sub>c</sub> Superconductor by Luminescence Methods (1989)
  • FUJIWARA Yasufumi ID: 9000308048894

    Graduate School of Engineering, Osaka University (2013 from CiNii)

    Articles in CiNii:2

    • Present Conditions and Subjects of Japan's Manufacturing (2010)
    • I-1-6 Electrode Formation on GaN-based LED by Printing of Nanoparticle Inks under Atmospheric Pressure (2013)
  • FUJIWARA Yasufumi ID: 9000391881591

    Articles in CiNii:1

    • New development in rare-earth-doped semiconductors (2011)
  • Fujiwara Yasufumi ID: 9000020130323

    Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University (2012 from CiNii)

    Articles in CiNii:1

    • Characteristics of SiN/GaAs interface under exposure to high-temperature and high-humidity conditions measured by photoreflectance spectroscopy (2012)
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