Search Results1-10 of  10

  • FUKUSHIMA Toshitaka ID: 9000000913169

    Electronic Devices Group, Fujitsu Limited (2002 from CiNii)

    Articles in CiNii:1

    • Review of the International Technology Roadmap for Semiconductors (ITRS) 2001 : Acceleration of miniaturization, major roadblocks circa 2005 (2002)
  • FUKUSHIMA Toshitaka ID: 9000005752308

    IC Division, Fujitsu Limited (1980 from CiNii)

    Articles in CiNii:1

    • A High Speed Schottky 4 k-Bit PROM Using Diffused Eutectic Aluminum Process (Deap) : A-4: LSI DEVICES (1980)
  • FUKUSHIMA Toshitaka ID: 9000253327972

    Electronic Devices Group, Fujitsu Limited (2002 from CiNii)

    Articles in CiNii:1

    • Review of the International Technology Roadmap for Semiconductors (ITRS) 2001:Acceleration of miniaturization, major road-blocks circa 2005 (2002)
  • Fukushima Toshitaka ID: 9000252947207

    Institute for Nuclear Study, University of Tokyo (1980 from CiNii)

    Articles in CiNii:1

    • Beam Loading Effect on Capture Efficiency in Radio Frequency Acceleration in Electron Synchrotron (1980)
  • Fukushima Toshitaka ID: 9000252976003

    Institute for Nuclear Study, University of Tokyo (1991 from CiNii)

    Articles in CiNii:1

    • Measurement of Beam Bunch Length in the 1.3-GeV Electron Synchrotron (1991)
  • Fukushima Toshitaka ID: 9000392689114

    Articles in CiNii:1

    • Beam Loading Effect on Capture Efficiency in Radio Frequency Acceleration in Electron Synchrotron (1980)
  • Fukushima Toshitaka ID: 9000392726097

    Articles in CiNii:1

    • Measurement of Beam Bunch Length in the 1.3-GeV Electron Synchrotron (1991)
  • Fukushima Toshitaka ID: 9000401586257

    Articles in CiNii:1

    • Beam Loading Effect on Capture Efficiency in Radio Frequency Acceleration in Electron Synchrotron (1980)
  • Fukushima Toshitaka ID: 9000401623078

    Articles in CiNii:1

    • Measurement of Beam Bunch Length in the 1.3-GeV Electron Synchrotron (1991)
  • Fukushima Toshitaka ID: 9000402054418

    Articles in CiNii:1

    • A High Speed Schottky 4 k-Bit PROM Using Diffused Eutectic Aluminum Process (Deap) (1980)
Page Top