Search Results1-7 of  7

  • Furuhashi Takahisa ID: 9000018256361

    Articles in CiNii:1

    • Analysis of sidewall damage layer in low-k film using the interline dielectric capacitance measurements (Special issue: Advanced metallization for ULSI applications) (2011)
  • Furuhashi Takahisa ID: 9000390929951

    Articles in CiNii:1

    • The assembly mechanism of coiled-coil domains of the yeast cargo receptors Emp46p/47p and the mutational alteration of pH-dependency of complex formation (2018)
  • FURUHASHI Takahisa ID: 9000107375983

    Department of Materials Science & Engineering, Tokyo Institute of Technology (2005 from CiNii)

    Articles in CiNii:1

    • Atomic Arrangement in a Triple-period A-type Ordered GaInP Layer Grown with Sb Addition during Metal Organic Vapor Phase Epitaxy Observed by Cross Sectional Scanning Tunneling Microscope (2005)
  • Furuhashi Takahisa ID: 9000258178610

    Department of Materials Science & Engineering, Tokyo Institute of Technology (2005 from CiNii)

    Articles in CiNii:1

    • Atomic Arrangement in a Triple-period A-type Ordered GaInP Layer Grown with Sb Addition during Metal Organic Vapor Phase Epitaxy Observed by Cross Sectional Scanning Tunneling Microscope (2005)
  • Furuhashi Takahisa ID: 9000401742768

    Articles in CiNii:1

    • Atomic Arrangement in a Triple-period A-type Ordered GaInP Layer Grown with Sb Addition during Metal Organic Vapor Phase Epitaxy Observed by Cross Sectional Scanning Tunneling Microscope (2005)
  • Furuhashi Takahisa ID: 9000401797076

    Articles in CiNii:1

    • Analysis of Sidewall Damage Layer in Low-kFilm Using the Interline Dielectric Capacitance Measurements (2011)
  • Furuhashi Takahisa ID: 9000401997945

    Articles in CiNii:1

    • Analysis of Sidewall Damage Layer in Low-kFilm Using the Interline Dielectric Capacitance Measurements (2011)
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