Search Results1-20 of  23

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  • Gosain Dharam Pal ID: 9000025036763

    Articles in CiNii:1

    • Instability of amorphous indium gallium zinc oxide thin film transistors under light illumination (Special issue: Active-matrix flatpanel displays and devices: TFT technologies and FPD materials) (2009)
  • Oberoi Gunjan Gosain ID: 9000287356916

    Articles in CiNii:1

    • Cross-Cultural Conflicts and Pursuit of Identity in Bharati Mukherjee's Jasmine (2015)
  • GOSAIN Arun K. ID: 9000001571223

    Department of Plastic and Reconstructive Surgery, Medical College of Wisconsin (2001 from CiNii)

    Articles in CiNii:1

    • Quantitative Assessment of Cranial Defect Healing and Correlation with the Expression of TGF-β (2001)
  • GOSAIN Arun K. ID: 9000001571742

    Department of Plastic and Reconstructive Surgery, Medical College of Wisconsin (2002 from CiNii)

    Articles in CiNii:1

    • Otoplasty in Children Less Than Four Years of Age : Surgical Technique (2002)
  • GOSAIN Dharam Pal ID: 9000000616052

    Frontier Science Laboratories, Sony Corporation (2001 from CiNii)

    Articles in CiNii:1

    • Polycrystalline Si Thin Film Transistor Fabrication on a Plastic Substrate (2001)
  • GOSAIN Dharam Pal ID: 9000004780800

    Frontier Science Laboratory, Sony Corporation (2000 from CiNii)

    Articles in CiNii:4

    • Poly-Si TFTs Fabricated at a Substrate Temperature of 110℃ (2000)
    • Si Dot Thin-Film-Transistor Memory (2000)
    • Si Dot Thin-Film-Transistor Memory (2000)
  • GOSAIN Dharam Pal ID: 9000005579035

    Research Center, Sony Corporation (1997 from CiNii)

    Articles in CiNii:2

    • Control of the Size and Position of Silicon Nanowires Grown via the Vapor-Liquid-Solid Technique (1997)
    • High Performance Bottom Gate TFTs by Excimer Laser Crystallization and Post Hydrogenation (1995)
  • GOSAIN Dharam Pal ID: 9000015563636

    Materials Laboratories, Yokohama Research Ceter, Sony Corporation (2003 from CiNii)

    Articles in CiNii:1

    • Formation of (100)-Textured Si Film Using an Excimer Laser on a Glass Substrate (2003)
  • GOSAIN Dharam Pal ID: 9000045945830

    Forntier Science Laboratories, Yokohama Research Center, Sony Corporation (2000 from CiNii)

    Articles in CiNii:1

    • High Mobility Thin Film Transistors Fabricated on a Plastic Substrate at a Processing Temperature of 110℃ (2000)
  • GOSAIN Rohan ID: 9000018185554

    International Center for Actuators and Transducers, Materials Research Institute, The Pennsylvania State University (2009 from CiNii)

    Articles in CiNii:1

    • High Power Piezoelectric Transformers with Pb(Mg_<1/3>Nb_<2/3>)O_3-PbTiO_3 Single Crystals (2009)
  • Gosain Dharam Pal ID: 9000258126227

    Sony Corporation Research Center, 174 Fujitsuka–cho, Hodogaya–ku, Yokohama–240, Japan (1995 from CiNii)

    Articles in CiNii:1

    • High Performance Bottom Gate TFTs by Excimer Laser Crystallization and Post Hydrogenation. (1995)
  • Gosain Dharam Pal ID: 9000258133574

    Research Center, Sony Corporation, 174 Fujitsuka–cho, Hodogaya–ku, Yokohama 240, Japan (1997 from CiNii)

    Articles in CiNii:1

    • Control of the Size and Position of Silicon Nanowires Grown via the Vapor-Liquid-Solid Technique. (1997)
  • Gosain Dharam Pal ID: 9000258165053

    Materials Laboratories, Yokohama Research Center, Sony Corporation (2003 from CiNii)

    Articles in CiNii:1

    • Formation of (100)-Textured Si Film Using an Excimer Laser on a Glass Substrate. (2003)
  • Gosain Dharam Pal ID: 9000401611258

    Articles in CiNii:1

    • Nonvolatile Memory Based on Reversible Phase Transition Phenomena in Telluride Glasses (1989)
  • Gosain Dharam Pal ID: 9000401652901

    Articles in CiNii:1

    • High Performance Bottom Gate TFTs by Excimer Laser Crystallization and Post Hydrogenation (1995)
  • Gosain Dharam Pal ID: 9000401666865

    Articles in CiNii:1

    • Control of the Size and Position of Silicon Nanowires Grown via the Vapor-Liquid-Solid Technique (1997)
  • Gosain Dharam Pal ID: 9000401694217

    Articles in CiNii:1

    • High Mobility Thin Film Transistors Fabricated on a Plastic Substrate at a Processing Temperature of 110°C (2000)
  • Gosain Dharam Pal ID: 9000401722005

    Articles in CiNii:1

    • Formation of (100)-Textured Si Film Using an Excimer Laser on a Glass Substrate (2003)
  • Gosain Dharam Pal ID: 9000401777746

    Articles in CiNii:1

    • Instability of Amorphous Indium Gallium Zinc Oxide Thin Film Transistors under Light Illumination (2009)
  • Gosain Dharam Pal ID: 9000252969094

    Department of Electrical and Computer Engineering, Faculty of Technology, Kanazawa University (1989 from CiNii)

    Articles in CiNii:1

    • Nonvolatile Memory Based on Reversible Phase Transition Phenomena in Telluride Glasses (1989)
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