Search Results1-20 of  32

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  • GOTOH YOSHITAKA ID: 9000392080469

    JAERI NAKA (2003 from CiNii)

    Articles in CiNii:1

    • Thermal properties of redeposition layer in the JT-60 divertor region (2003)
  • GOTOH YOSHITAKA ID: 9000392080488

    Naka Fusion Reserch Establishment, JAERI (2003 from CiNii)

    Articles in CiNii:1

    • Application of Imaging Plate Technique for determination of Tritium Distribution on Graphite tiles of JT-60U (_IV_) (2003)
  • GOTOH Yoshihiko ID: 9000005543950

    Department of Electronic Science and Engineering, Kyoto University (2010 from CiNii)

    Articles in CiNii:27

    • SEM Observation of Ag Crystallites Growing on Graphite Substrate (1995)
    • Single Electron Memory at Romm Temperature: Experiment and Simulation (2001)
    • Single Electron Transistor on Atomically Flat α-Al_2O_3 Substrate Made by AFM Nano-Oxidation Process (1997)
  • GOTOH Yoshitaka ID: 9000000521355

    (株)デンソー IC技術2部 (2001 from CiNii)

    Articles in CiNii:1

    • High-Power Pulsed Laser Diode for an Automotive Laser Radar Sensor (2001)
  • GOTOH Yoshitaka ID: 9000001718931

    Electrotechnical Laboratory (2000 from CiNii)

    Articles in CiNii:1

    • Ultra-Low Biased Field Emitter Using Single Wall Carbon Nanotube Directly Grown onto Silicon Tip by Thermal CVD (2000)
  • GOTOH Yoshitaka ID: 9000003635553

    Hitachi Research Laboratory, Hitachi Ltd. (1997 from CiNii)

    Articles in CiNii:6

    • Contact Resistance Characteristics of Butt-Weld Joints of (Nb, Ti)_3Sn Superconducting Wires (1995)
    • 2重コンジット型強制冷却コイルの製作と試験(1) : コイル製作 (1995)
    • Development of Boron Carbide-Carbon Fiber Composite Ceramics as Plasma Facing Materials in Nuclear Fusion Reactor(Part 1) Fabrication and Characteristics of the Materials (1997)
  • GOTOH Yoshitaka ID: 9000003717662

    (株)日立製作所 (1995 from CiNii)

    Articles in CiNii:1

    • Effect of Compressive Prestress on the Mechanical Properties of Isotropic Graphite (1995)
  • GOTOH Yoshitaka ID: 9000005407436

    Advantest Tech. (2006 from CiNii)

    Articles in CiNii:16

    • Tritium Distribution in the First Wall of JT-60U (2003)
    • 29pA05P Analyses of Re-deposition Layers on Graphite Tiles Used in JT-60U (2001)
    • Tritium behavior on the plasma facing material of JT-60U (2002)
  • GOTOH Yoshitaka ID: 9000005940528

    Corp. Misawa Home Shizuoka (1996 from CiNii)

    Articles in CiNii:2

    • FeRCEPTIONAL CHARACTERISTICS CONCERNING THE CEILING HEIGHT IN THE INTERIOR SPACE BY METHOD OF ADJUSTMENT : Study on space Perception in a Lying Posturre-1 (1996)
    • THE RELATIONS BETWEEN THE PERCEPTION OF THE CEILING HEIGHT AND THE DEPTH AND THE PERCEPTION OF THE VOLUME IN THE INTERIOR SPACE : Study on Space Perception a Lying Posture-2 (1996)
  • GOTOH Yoshitaka ID: 9000015687602

    Advanced Industrial Science & Technology, CREST (2003 from CiNii)

    Articles in CiNii:1

    • Single-Electron Transistor with Ultra-High Coulomb Energy of 5000K Using Position Controlled Grown Carbon Nanotube as Channel (2003)
  • GOTOH Yoshitaka ID: 9000022051300

    Central Research Laboratory, Hitachi Ltd. (1981 from CiNii)

    Articles in CiNii:1

    • Pyrolytic graphite irradiated with 4keV hydrogen ions using reflection high-energy electron diffraction. (1981)
  • GOTOH Yoshitaka ID: 9000253575802

    Hitachi Research Laboratory, Hitachi Ltd. (1995 from CiNii)

    Articles in CiNii:1

    • Contact Resistance Characteristics of Butt-Weld Joints of (Nd,Ti)3Sn Superconducting Wires. (1995)
  • GOTOH Yoshitaka ID: 9000254668198

    Naka Fusion Res. Establishment, Japan At. Energy Res. Inst. (2003 from CiNii)

    Articles in CiNii:1

    • Tritium Distribution in the First Wall of JT-60U (2003)
  • GOTOH Yoshitaka ID: 9000392073920

    Japan Atomic Energy Reseaech Institute, Naka Establishment (2005 from CiNii)

    Articles in CiNii:1

    • Plasma Wall Interactions and Hydrogen Retention in Plasma Facing Surface:(8) The <SUP>13</SUP>C Distribution on the First Wall in JT-60U (2005)
  • Gotoh Yoshitaka ID: 9000255728253

    Articles in CiNii:1

    • Room Temperature Single Electron Memory Made by AFM Nano-Oxidation Process. (1999)
  • Gotoh Yoshitaka ID: 9000258145348

    Electrotechnical Laboratory, 1–1–4, Umezono, Tsukuba 305, Japan (1999 from CiNii)

    Articles in CiNii:1

    • Metal-Based Room-Temperature Operating Single Electron Devices Using Scanning Probe Oxidation. (1999)
  • Gotoh Yoshitaka ID: 9000258151590

    Electrotechnical Laboratory MITI, 1-1-4 Umezono, Tsukuba, Ibaraki 305-8568, Japan (2000 from CiNii)

    Articles in CiNii:1

    • Experimental and Simulated Results of Room Temperature Single Electron Transistor Formed by Atomic Force Microscopy Nano-Oxidation Process. (2000)
  • Gotoh Yoshitaka ID: 9000258154152

    Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305-8568, Japan (2001 from CiNii)

    Articles in CiNii:1

    • Single Electron Memory at Room Temperature: Experiment and Simulation. (2001)
  • Gotoh Yoshitaka ID: 9000258160925

    Tsukuba University, 1-1-1 Tennoudai, Tsukuba, Ibaraki 305-8573, Japan (2002 from CiNii)

    Articles in CiNii:1

    • Room Temperature Coulomb Diamond Characteristic of Single Electron Transistor Made by AFM Nano-Oxidation Process. (2002)
  • Gotoh Yoshitaka ID: 9000258166736

    Advanced Industrial Science & Technology, CREST (2003 from CiNii)

    Articles in CiNii:1

    • Single-Electron Transistor with Ultra-High Coulomb Energy of 5000K Using Position Controlled Grown Carbon Nanotube as Channel (2003)
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