Search Results1-13 of  13

  • Goto Kinya ID: 9000018256360

    Articles in CiNii:1

    • Structure-modification model of porogen-based porous SiOC film with ultraviolet curing (Special issue: Advanced metallization for ULSI applications) (2011)
  • GOTO Kinya ID: 9000004778941

    Renesas Technology Corp. (2010 from CiNii)

    Articles in CiNii:7

    • B doped Si_1-x>Ge_x film growth using ultraclean CVD (1993)
    • In-situ Doping of P and B Doping Si_<1-x>Ge_x Epitaxial Growth by LPCVD (1995)
    • Self-Aligned Ultrashallow Junction Formation Using Selective Si_<1-x>Ge_x CVD for Ultra-Small MOSFET (1995)
  • GOTO Kinya ID: 9000107344210

    Wafer Process Engineering Development Division, Renesas Technology Corporation (2005 from CiNii)

    Articles in CiNii:1

    • Low-Damage Damascene Patterning Using Porous Inorganic Low-Dielectric-Constant Materials (2005)
  • Goto Kinya ID: 9000252985486

    Laboratory for Microelectronics, Research Institute of Electrical Communication, Tohoku University (1993 from CiNii)

    Articles in CiNii:1

    • Fabrication of a Si<SUB>1−<I>x</I></SUB>Ge<I><SUB>x</SUB></I> Channel Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) Containing High Ge Fraction Layer by Low-Pressure Chemical Vapor Deposition (1993)
  • Goto Kinya ID: 9000258121842

    Laboratory for Microelectronics, Research Institute of Electrical Communication, Tohoku University, 2–1–1 Katahira, Aoba–ku, Sendai 980 (1994 from CiNii)

    Articles in CiNii:1

    • Ultrashallow Junction Formation Using Low-Temperature Selective Si1-xGex Chemical Vapor Deposition. (1994)
  • Goto Kinya ID: 9000258181798

    Wafer Process Engineering Development Division, Renesas Technology Corporation (2005 from CiNii)

    Articles in CiNii:1

    • Low-Damage Damascene Patterning Using Porous Inorganic Low-Dielectric-Constant Materials (2005)
  • Goto Kinya ID: 9000392737216

    Articles in CiNii:1

    • Fabrication of a Si<SUB>1−<I>x</I></SUB>Ge<I><SUB>x</SUB></I> Channel Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) Containing High Ge Fraction Layer by Low-Pressure Chemical Vapor Deposition (1993)
  • Goto Kinya ID: 9000401635691

    Articles in CiNii:1

    • Fabrication of a Si1-xGexChannel Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) Containing High Ge Fraction Layer by Low-Pressure Chemical Vapor Deposition (1993)
  • Goto Kinya ID: 9000401640932

    Articles in CiNii:1

    • Ultrashallow Junction Formation Using Low-Temperature SelectiveSi1-xGexChemical Vapor Deposition (1994)
  • Goto Kinya ID: 9000401736573

    Articles in CiNii:1

    • Low-Damage Damascene Patterning Using Porous Inorganic Low-Dielectric-Constant Materials (2005)
  • Goto Kinya ID: 9000401788257

    Articles in CiNii:1

    • Cu Dual-Damascene Interconnects with Direct Chemical Mechanical Polishing Process on Porous Low-kFilm (2010)
  • Goto Kinya ID: 9000401797071

    Articles in CiNii:1

    • Structure-Modification Model of Porogen-Based Porous SiOC Film with Ultraviolet Curing (2011)
  • Goto Kinya ID: 9000401997940

    Articles in CiNii:1

    • Structure-Modification Model of Porogen-Based Porous SiOC Film with Ultraviolet Curing (2011)
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