Search Results1-7 of  7

  • Hatasako Kenichi ID: 9000025031042

    Articles in CiNii:1

    • Novel design of vertical double-diffused metal-oxide-semiconductor transistor for high electrostatic discharge robustness (Special issue: Solid state devices and materials) (2009)
  • HATASAKO Kenichi ID: 9000016816219

    Mixed Signal Device Technology Department, Devices & Analysis Technology Division, Renesas Electronics Corporation (2011 from CiNii)

    Articles in CiNii:2

    • Analysis of Snapback Phenomena in VDMOS Transistor having the High Second Breakdown Current : A High ESD Mechanism Analysis (2009)
    • ESD Robustness Improvement for Integrated DMOS Transistors-The Different Gate-Voltage Dependence of I_<t2> Between VDMOS and LDMOS Transistors (2011)
  • HATASAKO Kenichi ID: 9000240236399

    Mixed Signal Device Tech. Dept. Renesas Electronics Corp.Advanced LSI Devices Research Renesas Electronics Corp. (2013 from CiNii)

    Articles in CiNii:12

    • 120V BiC-DMOS Process for the Latest Automotive and Display Applications (2002)
    • 60V Field NMOS and PMOS transistors for the multi-voltage system integration (2001)
    • Development of 0.5μm BiCMOS & DMOS process (1999)
  • HATASAKO Kenichi ID: 9000243892938

    Mixed Signal Device Tech. Dept., Renesas Electronics Corp. (2014 from CiNii)

    Articles in CiNii:1

    • Past and Future Technology for Mixed Signal LSI (2014)
  • Hatasako Kenichi ID: 9000401778518

    Articles in CiNii:1

    • 2009-04-20 (2009)
  • Hatasako Kenichi ID: 9000401787667

    Articles in CiNii:1

    • 2010-04-20 (2010)
  • Hatasako Kenichi ID: 9000402022282

    Articles in CiNii:1

    • Reliability study of thermal cycling stress on smart power devices (2014)
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