Search Results1-20 of  81

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  • Hatayama Tomoaki ID: 9000010056680

    Articles in CiNii:1

    • Nondestructive Analysis of Crystal Defects in 4H-SiC Epilayer by Devised Electron-Beam-Induced Current Method (2005)
  • Hatayama Tomoaki ID: 9000025059489

    Articles in CiNii:1

    • Thermal analysis of degradation in Ga2O3-In2O3-ZnO thin-film transistors (2008)
  • HATAYAMA Tomoaki ID: 9000001623222

    Graduate School of Materials Science, Nara Institute of Science and Technology (2010 from CiNii)

    Articles in CiNii:13

    • Comprehensive Study on Reliability of Low-Temperature Poly-Si TFTs under Dynamic CMOS Operations (2001)
    • High pressure water vapor annealing for improving HfSiO dielectrics properties (2005)
    • Electron Injection into Si Nanodot Fabricated by Side-Wall Plasma Enhanced Chemical Vapor Deposition (2005)
  • HATAYAMA Tomoaki ID: 9000002730582

    Ion Engineering Research Institute Corporation:(Present address)Nara Institute of Science and Technology (2000 from CiNii)

    Articles in CiNii:4

    • Comparison between the Photoluminescence Properties of LaPO_4:Tb,Ce Phosphor under 254nm Excitation and those under 365nm Excitation (1996)
    • Time-Resolved Reflection High-Energy Electron Diffraction Analysis in Initial Stage of 3C-SiC Growth on Si (001) by Gas Source Molecular Beam Epitaxy (1996)
    • Quantitative Analysis for CH_3 Radicals in Low-Temperature Growth of 3C-SiC on Si(001) Clean Surface (1995)
  • HATAYAMA Tomoaki ID: 9000015641257

    Graduate School of Materials Science, Nara Institute of Science and Technology (2003 from CiNii)

    Articles in CiNii:1

    • Low Temperature Nitridation of Si Oxide Utilizing Activated Oxygen and Nitrogen (2003)
  • HATAYAMA Tomoaki ID: 9000107313934

    Nara Institute of Science and Technology (2007 from CiNii)

    Articles in CiNii:1

    • Reliability Analysis of Ultra Low-Temperature Polycrystalline Silicon Thin-Film Transistors (2007)
  • HATAYAMA Tomoaki ID: 9000107316943

    Graduate School of Materials Science, Nara Institute of Science and Technology (2011 from CiNii)

    Articles in CiNii:1

    • Effects of POCl_3 Annealing on SiO_2/p-type 4H-SiC Interface Properties (2011)
  • HATAYAMA Tomoaki ID: 9000107334699

    Graduate School of Materials Science, Nara Institute of Science and Technology (2001 from CiNii)

    Articles in CiNii:1

    • Hot Carrier Effects in Low-Temperature Polysilicon Thin-Film Transistors (2001)
  • HATAYAMA Tomoaki ID: 9000107341474

    Graduate School of Materials Science, Nara Institute of Science and Technology (2005 from CiNii)

    Articles in CiNii:1

    • Fabrication of Anodic Oxidation Films on 4H-SiC at Room Temperature Using HNO_3-Based Electrolytes (2005)
  • HATAYAMA Tomoaki ID: 9000107341631

    Graduate School of Materials Science, Nara Institute of Science and Technology (2005 from CiNii)

    Articles in CiNii:1

    • Role of Hydrogen in Dry Etching of Silicon Carbide Using Inductively and Capacitively Coupled Plasma (2005)
  • HATAYAMA Tomoaki ID: 9000107344333

    Graduate School of Materials Science, Nara Institute of Science and Technology (2005 from CiNii)

    Articles in CiNii:1

    • Degradation in Low-Temperature Poly-Si Thin Film Transistors Depending on Grain Boundaries (2005)
  • HATAYAMA Tomoaki ID: 9000107354748

    Graduate School of Materials Science, Nara Institute of Science and Technology (2006 from CiNii)

    Articles in CiNii:1

    • Floating Nanodot Gate Memory Devices Based on Biomineralized Inorganic Nanodot Array as a Storage Node (2006)
  • HATAYAMA Tomoaki ID: 9000107366514

    Graduate School of Materials Science, Nara Institute of Science and Technology (2005 from CiNii)

    Articles in CiNii:1

    • Analysis of Photoelectrochemical Processes in α-SiC Substrates with Atomically Flat Surfaces (2005)
  • HATAYAMA Tomoaki ID: 9000107377084

    Graduate School of Materials Science, Nara Institute of Science and TechnologyGraduate School of Materials Science, Nara Institute of Science and Technology (2003 from CiNii)

    Articles in CiNii:1

    • Improvement of SiO_2 / SiC Interface Properties by Nitrogen Radical Irradiation (2003)
  • HATAYAMA Tomoaki ID: 9000107384336

    Articles in CiNii:1

    • Degradation of Ga_2O_3-In_2O_3-ZnO (GIZO) Thin Film Transistor (2008)
  • HATAYAMA Tomoaki ID: 9000107386484

    Nara Institute of Science and Technology (2006 from CiNii)

    Articles in CiNii:1

    • Improvement of Reliability in Low-Temperature Polycrystalline Silicon Thin-Film Transistors by Water Vapor Annealing (2006)
  • HATAYAMA Tomoaki ID: 9000107390418

    Graduate School of Materials Science, Nara Institute of Science and Technology (2006 from CiNii)

    Articles in CiNii:1

    • Evaluation of Crystallinity in 4H-SiC{0001} Epilayers Thermally Etched by Chlorine and Oxygen System (2006)
  • HATAYAMA Tomoaki ID: 9000257786110

    Graduate School of Engineering, Kyoto University (1996 from CiNii)

    Articles in CiNii:1

    • Comparison between the Photoluminescence Properties of LaPO4:Tb,Ce Phosphor under 254nm Excitation and those under 365nm Excitation. (1996)
  • HATAYAMA Tomoaki ID: 9000283228127

    Graduate School of Materials Science, Nara Institute of Science and Technology (2014 from CiNii)

    Articles in CiNii:1

    • Reduction of SiC-MOS Interface Traps and Improved MOSFET Performance by Phosphorus Incorporation into Gate Oxides (2014)
  • Hatayama Tomoaki ID: 9000025058719

    Articles in CiNii:1

    • Thermal etching of 4H-SiC(0001) Si faces in the mixed gas of chlorine and oxygen (2009)
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