Search Results1-19 of  19

  • HATTORI NOBUYOSHI ID: 9000256197623

    LSI Research and Development Laboratory (1989 from CiNii)

    Articles in CiNii:1

    • The Clean Room and Clean Garment Technology for LSI Process (1989)
  • HATTORI Nobuyoshi ID: 9000001227655

    Semiconductor Technology Academic Research Center (2004 from CiNii)

    Articles in CiNii:1

    • Characterizing Metal-Oxide Semiconductor Structures Consisting of HfSiO_x as Gate Dielectrics using Monoenergetic Positron Beams (2004)
  • HATTORI Nobuyoshi ID: 9000001935187

    Japan Tobacco Inc,. Leaf Tobacco Research Laboratory (1999 from CiNii)

    Articles in CiNii:7

    • Development of a Sewing Machine for Burley Tobacco Leaves (Part 1) : Production of a sewing machine for sewing leaves to garland rope (1999)
    • Development of a Full Automated Tying Machine for Burley Tobacco Leaves (Part 3) : Examination of performance and cycle about leaf feeding mechanism (1998)
    • Development of a Full Automated Tying Machine for Burley Tobacco Leaves (Part 2) : Production of a Full Automated Tying Machine (1997)
  • HATTORI Nobuyoshi ID: 9000002172139

    Process Technology Development Division, Renesas Technology Corp. (2006 from CiNii)

    Articles in CiNii:1

    • Local Bonding Structure of High-Stress Silicon Nitride Film modified by UV Curing for Strained-Silicon Technology beyond 45nm Node SoC Devices (2006)
  • HATTORI Nobuyoshi ID: 9000004754731

    Mitsubishi Electric Corporation ULSI Development Center (2001 from CiNii)

    Articles in CiNii:3

    • シリコンウェハの技術動向 (超LSI製造・試験装置ガイドブック 2001年版) -- (総論) (2000)
    • Surface Defects on SOI Wafers and Their Influences on Device Characteristics (2001)
    • Surface defects on SOI wafers and their influences on device characteristics (2000)
  • HATTORI Nobuyoshi ID: 9000004813001

    ULSI Laboratory, Mitsubishi Electric Corporation (1996 from CiNii)

    Articles in CiNii:1

    • Yield Prediction Method Considering the Effect of Particles on Sub-Micron Patterning (1996)
  • HATTORI Nobuyoshi ID: 9000020099254

    Contamination Control Technology Group, LSI Research and Development Laboratory, Mitsubishi Electric Corporation (1989 from CiNii)

    Articles in CiNii:1

    • Control of Airborne Dust Generated from Materials, Garments and Process Equipments in Clean Room (1989)
  • HATTORI Nobuyoshi ID: 9000020229410

    LSI R & D LAB. MITSUBISHI Electric Corporation (1990 from CiNii)

    Articles in CiNii:1

    • Clean technology: From atomospheric condition to vacuum. (1990)
  • HATTORI Nobuyoshi ID: 9000253324605

    LSI Process Development Dept. III, LSI Research and Development Laboratory, Mitsubishi Electric Corporation. (1989 from CiNii)

    Articles in CiNii:1

    • Particle Contamination Control Technology in VLSI Wafer Fabrication Process (1989)
  • HATTORI Nobuyoshi ID: 9000256539766

    江井ケ嶋酒造株式会社 (1984 from CiNii)

    Articles in CiNii:1

    • Treatment of Waste-Water Discharged from the Distillation Process of Whisky Using Yeast (1984)
  • HATTORI Nobuyoshi ID: 9000256699986

    Japan Tobacco Inc., Leaf Tobacco Research Laboratory (1991 from CiNii)

    Articles in CiNii:1

    • Cost Estimation System for the Agricultural Mechanization. Application for the Tobacco Culture.:Application for the Tobacco Culture (1991)
  • Hattori Nobuyoshi ID: 9000047149032

    Articles in CiNii:1

    • Local Bonding Structure of High-Stress Silicon Nitride Film Modified by UV Curing for Strained Silicon Technology beyond 45 nm Node SoC Devices (2007)
  • Hattori Nobuyoshi ID: 9000079945171

    Articles in CiNii:1

    • Evaluation of Strain in Si-on-Insulator Substrate Induced by Si3N4Capping Film (2008)
  • Hattori Nobuyoshi ID: 9000258172206

    Semiconductor Technology Academic Research Center (2004 from CiNii)

    Articles in CiNii:1

    • Characterizing Metal-Oxide Semiconductor Structures Consisting of HfSiOx as Gate Dielectrics using Monoenergetic Positron Beams (2004)
  • Hattori Nobuyoshi ID: 9000401724059

    Articles in CiNii:1

    • Characterizing Metal-Oxide Semiconductor Structures Consisting of HfSiOxas Gate Dielectrics using Monoenergetic Positron Beams (2004)
  • Hattori Nobuyoshi ID: 9000402017668

    Articles in CiNii:1

    • 2013-09-01 (2013)
  • Hattori Nobuyoshi ID: 9000402020250

    Articles in CiNii:1

    • 2014-01-10 (2014)
  • Hattori Nobuyoshi ID: 9000402021351

    Articles in CiNii:1

    • 2014-01-01 (2014)
  • Hattori Nobuyoshi ID: 9000402028397

    Articles in CiNii:1

    • NiPt silicide agglomeration accompanied by stress relaxation in NiSi(010) ∥ Si(001) grains (2015)
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