Search Results1-8 of  8

  • Hattori Nozomu ID: 9000018898677

    Articles in CiNii:1

    • Low-Temperature-Processed Zinc Oxide Thin-Film Transistors Fabricated by Plasma-Assisted Atomic Layer Deposition (Special Issue : Solid State Devices and Materials (1)) (2012)
  • Hattori Nozomu ID: 9000024980360

    Articles in CiNii:1

    • ZnO thin films fabricated by plasma-assisted atomic layer deposition (Special issue: Solid state devices and materials) (2011)
  • HATTORI Nozomu ID: 9000020103564

    The Graduate School of Natural Science and Technology, Okayama University (2001 from CiNii)

    Articles in CiNii:1

    • サマリー・アブストラクト (2001)
  • Hattori Nozomu ID: 9000006144225

    Department of Physics, Waseda University (2006 from CiNii)

    Articles in CiNii:1

    • Short-Time Scaling in a Critical Relaxation Dynamics with a Kernelized Langevin Equation(Fundamental Problems and Applications of Quantum Field Theory) (2006)
  • Hattori Nozomu ID: 9000401796092

    Articles in CiNii:1

    • ZnO Thin Films Fabricated by Plasma-Assisted Atomic Layer Deposition (2011)
  • Hattori Nozomu ID: 9000401803836

    Articles in CiNii:1

    • Low-Temperature-Processed Zinc Oxide Thin-Film Transistors Fabricated by Plasma-Assisted Atomic Layer Deposition (2012)
  • Hattori Nozomu ID: 9000401996966

    Articles in CiNii:1

    • ZnO Thin Films Fabricated by Plasma-Assisted Atomic Layer Deposition (2011)
  • Hattori Nozomu ID: 9000402004698

    Articles in CiNii:1

    • Low-Temperature-Processed Zinc Oxide Thin-Film Transistors Fabricated by Plasma-Assisted Atomic Layer Deposition (2012)
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