Search Results1-20 of  33

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  • HAYASAKA NOBUO ID: 9000256789733

    Clinical Laboratories, Sendai City Hospital (1990 from CiNii)

    Articles in CiNii:1

    • HOSPITAL AND DISTRICT DIFFERENCES IN SUSCEPTIBILITIES TO ANTIBIOTICS OF MAIN CLINICAL ISOLATES (1990)
  • HAYASAKA Nobuo ID: 9000000209215

    (株)東芝 (1996 from CiNii)

    Articles in CiNii:1

    • 2. CVD プロセス技術と反応装置 プラズマCVD装置 (1996)
  • HAYASAKA Nobuo ID: 9000001720678

    ULSI Research Laboratories, TOSHIBA Corporation (1996 from CiNii)

    Articles in CiNii:1

    • Significant Effect of OH inside Silicon Chemical Oxides on AHF(Anhydrous Hydrofluoric Acid) Etching (1996)
  • HAYASAKA Nobuo ID: 9000004777436

    Process and Manufacturing Engineering Center Semiconductor Company, TOSHIBA Corp. (2000 from CiNii)

    Articles in CiNii:2

    • Silicon Interposer Technology for High-density Package (2000)
    • Silicon Interposer Technology for High-density Package (2000)
  • HAYASAKA Nobuo ID: 9000005544012

    Microelectronics Engineering Lab., Toshiba Corp. (1997 from CiNii)

    Articles in CiNii:6

    • Ab Initio Molecular Orbital Study of Suppression of Water Absorption and Hydrolysis(F-Removal)of Chemical-Vapor-Deposited SiOF Films by Nitrogen Doping (1997)
    • Fluorine Doped SiO_2 for Low Dielectric Constant Films in Sub-Half Micron ULSI Multilevel Interconnection (1995)
    • Water Absorption Properties of Fluorine-Doped SiO_2 Films Using Plasma-Enhanced Chemical Vapor Deposition (1996)
  • HAYASAKA Nobuo ID: 9000107341723

    Advanced ULSI Process Engineering Department, Process & Manufacturing Engineering Center, Toshiba Corporation Semiconductor Company (2005 from CiNii)

    Articles in CiNii:1

    • Properties of High-Performance Porous SiOC Low-k Film Fabricated Using Electron-Beam Curing (2005)
  • HAYASAKA Nobuo ID: 9000107348173

    Advanced ULSI Process Engineering Department, Process & Manufacturing Engineering Center, Toshiba Corporation Semiconductor Company (2004 from CiNii)

    Articles in CiNii:1

    • High-Performance SiOF Film Fabricated Using a Dual-Frequency-Plasma Chemical Vapor Deposition system (2004)
  • HAYASAKA Nobuo ID: 9000107352763

    Advanced ULSI Process Engineering Department, Process & Manufacturing Engineering Center, Toshiba Corporation Semiconductor Company (2005 from CiNii)

    Articles in CiNii:1

    • Structural Studies of High-Performance Low-k Dielectric Materials Improved by Electron-Beam Curing (2005)
  • HAYASAKA Nobuo ID: 9000253324189

    ULSI Research Center, Toshiba Corp. (1988 from CiNii)

    Articles in CiNii:1

    • Liquid Phase CVD Technology of Insulator Film (1988)
  • Hayasaka Nobuo ID: 9000252958273

    VLSI Research Center, Toshiba Corp. (1986 from CiNii)

    Articles in CiNii:1

    • Radiation Damage Evaluation in Excimer Laser Beam Irradiation and Reactive Ion Etching (1986)
  • Hayasaka Nobuo ID: 9000252963201

    Institute for Molecular Science (1987 from CiNii)

    Articles in CiNii:1

    • Synchrotron Radiation-Assisted Etching of Silicon Surface (1987)
  • Hayasaka Nobuo ID: 9000252977367

    ULSI Research Center, Toshiba Corp. (1991 from CiNii)

    Articles in CiNii:1

    • Mechanism of Corrosion in Al–Si–Cu (1991)
  • Hayasaka Nobuo ID: 9000252987078

    ULSI Research Laboratories, Research and Development Center, TOSHIBA Corporation (1993 from CiNii)

    Articles in CiNii:1

    • Formation of Single-Crystal Al Interconnection by <I>In Situ</I> Annealing (1993)
  • Hayasaka Nobuo ID: 9000258124744

    ULSI Research Laboratories, Research and Development Center, Toshiba Corporation, 1 Komukai, Toshiba–cho, Saiwai–ku, Kawasaki 210, Japan (1995 from CiNii)

    Articles in CiNii:1

    • In Situ Transmission Electron Microscopy Observation of Single Crystallization of Filled Aluminum Interconnection. (1995)
  • Hayasaka Nobuo ID: 9000258136857

    Microelectronics Engineering Lab., Toshiba Corp., 1, Komukai Toshiba–cho, Saiwai–ku, Kawasaki 210, Japan (1997 from CiNii)

    Articles in CiNii:1

    • Ab initio Molecular Orbital Study of Water Absorption and Hydrolysis of Chemical Vapor Deposited SiOF Films II. (1997)
  • Hayasaka Nobuo ID: 9000258136944

    Microelectronics Engineering Lab., Toshiba Corp., 1 Komukai Toshiba–cho, Saiwai–ku, Kawasaki 210, Japan (1997 from CiNii)

    Articles in CiNii:1

    • Ab initio Molecular Orbital Study of Water Absorption and Hydrolysis of Chemical Vapor Deposited SiOF Films I. (1997)
  • Hayasaka Nobuo ID: 9000258177731

    Advanced ULSI Process Engineering Department, Process & Manufacturing Engineering Center, Toshiba Corporation Semiconductor Company (2005 from CiNii)

    Articles in CiNii:1

    • Structural Studies of High-Performance Low-k Dielectric Materials Improved by Electron-Beam Curing (2005)
  • Hayasaka Nobuo ID: 9000258182749

    Advanced ULSI Process Engineering Department, Process & Manufacturing Engineering Center, Toshiba Corporation Semiconductor Company (2005 from CiNii)

    Articles in CiNii:1

    • Properties of High-Performance Porous SiOC Low-k Film Fabricated Using Electron-Beam Curing (2005)
  • Hayasaka Nobuo ID: 9000392709838

    Articles in CiNii:1

    • Synchrotron Radiation-Assisted Etching of Silicon Surface (1987)
  • Hayasaka Nobuo ID: 9000392712845

    Articles in CiNii:1

    • Radiation Damage Evaluation in Excimer Laser Beam Irradiation and Reactive Ion Etching (1986)
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