Search Results1-20 of  166

  • HIRAMATSU Kazumasa ID: 9000023214462

    Articles in CiNii:1

    • Characterization of GaN based Schottky UV detectors in the vacuum UV (VUV) and the soft X-ray (SX) region (10-100 nm) (2003)
  • Hiramatsu Kazumasa ID: 9000241670637

    Articles in CiNii:1

    • AlN Grown on a- and n-Plane Sapphire Substrates by Low-Pressure Hydride Vapor Phase Epitaxy (Special Issue : Recent Advances in Nitride Semiconductors) (2013)
  • HIRAMATSU KAZUMASA ID: 9000006089079

    Department of Electrical and Electronic Engineering, Mie University (2006 from CiNii)

    Articles in CiNii:1

    • Simulation of Liquid Phase Epitaxy considering two dimensional flow (2006)
  • HIRAMATSU Kazumasa ID: 9000002561000

    Division of Electrical and Electronic Engineering, Graduate School of Engineering, Mie University (2009 from CiNii)

    Articles in CiNii:26

    • X-Ray Analysis of Twist and Tilt of GaN Prepared by Facet-Controlled Epitaxial Lateral Overgrowth (FACELO) (2003)
    • Gradual tilting of crystallographic orientation and configuration of dislocations in GaN selectively grown by vapour phase epitaxy methods (2000)
    • Freestanding GaN Substrate by Advanced Facet-Controlled Epitaxial Lateral Overgrowth Technique with Masking Side Facets (2005)
  • HIRAMATSU Kazumasa ID: 9000005661557

    Department of Electronics, Nagoya University (1995 from CiNii)

    Articles in CiNii:1

    • Fabrication of GaN Hexagonal Pyramids on Dot-Patterned GaN/Sapphire Substrates via Selective Metalorganic Vapor Phase Epitaxy (1995)
  • HIRAMATSU Kazumasa ID: 9000006690999

    Department of Electrical and Electronic Engineering, Mie University (2008 from CiNii)

    Articles in CiNii:1

    • Selective Area Growth of III-Nitride and Their Application for Emitting Devices (2008)
  • HIRAMATSU Kazumasa ID: 9000017504665

    Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University (2010 from CiNii)

    Articles in CiNii:2

    • Variation of Surface Potentials of Si-Doped Al_xGa_<1-x>N (O<x<0.87) Grown on AlN/Sapphire Template by Metal-Organic Vapor Phase Epitaxy (2010)
    • Characterization of deep electron levels of AlGaN grown by MOVPE (2010)
  • HIRAMATSU Kazumasa ID: 9000018185469

    Department of Electrical and Electronic Engineering, Mie University (2012 from CiNii)

    Articles in CiNii:2

    • Effects of Substrate Plane on the Growth of High Quality AlN by Hydride Vapor Phase Epitaxy (2009)
    • Microstructure of AlN Grown on a Nucleation Layer on a Sapphire Substrate (2012)
  • HIRAMATSU Kazumasa ID: 9000019236682

    Department of Electrical and Electronic Engineering, Mie University (2012 from CiNii)

    Articles in CiNii:1

    • Photoluminescence due to Inelastic Biexciton Scattering from an Al_<0.61>Ga_<0.39>N Ternary Alloy Epitaxial Layer at Room Temperature (2012)
  • HIRAMATSU Kazumasa ID: 9000107308404

    Department of Electrical and Electronic Engineering, Mie University (2005 from CiNii)

    Articles in CiNii:1

    • Growth of Thick AlN Layer by Hydride Vapor Phase Epitaxy (2005)
  • HIRAMATSU Kazumasa ID: 9000107350625

    Department of Electrical and Electronic Engineering, Graduate School of Engineering, Mie University (2011 from CiNii)

    Articles in CiNii:1

    • Raman Scattering Spectroscopy of Residual Stresses in Epitaxial AlN Films (2011)
  • HIRAMATSU Kazumasa ID: 9000107359902

    Department、Mie University (2011 from CiNii)

    Articles in CiNii:1

    • Etch-pit method of threading dislocations in epitaxial AlN films (2011)
  • HIRAMATSU Kazumasa ID: 9000107359939

    Department、Mie University (2011 from CiNii)

    Articles in CiNii:1

    • Etch-pit method of threading dislocations in epitaxial AlN films (2011)
  • HIRAMATSU Kazumasa ID: 9000107375352

    Articles in CiNii:1

    • Characterization of deep electron levels of AlGaN grown by MOVPE (2010)
  • HIRAMATSU Kazumasa ID: 9000107377014

    Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University (2003 from CiNii)

    Articles in CiNii:1

    • Metalorganic Vapor Phase Epitaxy Growth and Study of Stress in AlGaN Using Epitaxial AlN Underlying Layer (2003)
  • HIRAMATSU Kazumasa ID: 9000107378992

    Department of Electrical and Electronic Engineering, Mie University (2011 from CiNii)

    Articles in CiNii:1

    • Fabrication of Deep-Ultraviolet-Light-Source Tube Using Si-Doped AlGaN (2011)
  • HIRAMATSU Kazumasa ID: 9000107392623

    Department of Electronics, School of Engineering, Nagoya University (1997 from CiNii)

    Articles in CiNii:1

    • Metalorganic Vapor Phase Epitaxy of Thick InGaN on Sapphire Substrate (1997)
  • HIRAMATSU Kazumasa ID: 9000253322181

    Department of Electronics, Nagoya University (1981 from CiNii)

    Articles in CiNii:1

    • On Miscibility of Compound Semiconductor Alloys (1981)
  • HIRAMATSU Kazumasa ID: 9000257786616

    Mie University, Department of Electrical and Electronic Engineering, Graduate School of Engineering (2008 from CiNii)

    Articles in CiNii:1

    • Optical Characterization of Japanese Papers for Application in the LED Lighting System with Human Sensitivity (2008)
  • HIRAMATSU Kazumasa ID: 9000257786656

    Department of Electrical and Electronic Engineering, Mie University (2008 from CiNii)

    Articles in CiNii:1

    • Selective Area Growth of III-Nitride and Their Application for Emitting Devices (2008)
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