Search Results1-20 of  43

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  • HIRATANI Masahiko ID: 9000001506713

    Central Research Laboratory, Hitachi, Ltd. (2001 from CiNii)

    Articles in CiNii:1

    • The Atomistic Origin of High Dielectric Constants of Ta_2O_5 Thin Film Deposited on Ru Electrodes (2001)
  • HIRATANI Masahiko ID: 9000004817241

    Central Research Laboratory, Hitachi, Ltd. (2004 from CiNii)

    Articles in CiNii:14

    • Effects of Post-Annealing Temperatures and Ambient Atmospheres on the Electrical Properties of Ultrathin (Ba, Sr) TiO_3 Capacitors (1998)
    • Fabrication of Pd(Zr, Ti)O_3 Microscopic Capacitors by Electron Beam Lithography (1997)
    • Conformal Platinum Electrodes Prepared by Chemical Vapor Deposition Using a Liquid MeCpPtMe_3 Precursor in an Oxidizing Atmosphere (2000)
  • HIRATANI Masahiko ID: 9000004963465

    Hitachi Europe, Ltd., Whitebrook Park (2005 from CiNii)

    Articles in CiNii:13

    • Scaling limit of high-κ gate dielectrics (2001)
    • Breakthrough in technologies for electrodes of MIM capacitors (2002)
    • ギガビットDRAMに向けたキャパシタ技術 (超LSI製造・試験装置ガイドブック 2002年版) -- (総論) (2001)
  • HIRATANI Masahiko ID: 9000006464126

    Central Research Laboratory, Hitachi, Ltd. (2002 from CiNii)

    Articles in CiNii:1

    • Effective Electron Mobility Reduced by Remote Charge Scattering in High-κ Gate Stacks (2002)
  • HIRATANI Masahiko ID: 9000107389743

    Central Research Laboratory, Hitachi, Ltd. (2003 from CiNii)

    Articles in CiNii:1

    • Inversion Electron Mobility Affected by Phase Separation in High-Permittivity Gate Dielectrics (2003)
  • Hiratani Masahiko ID: 9000252762033

    Central Research Laboratory, Hitachi, Ltd. (1989 from CiNii)

    Articles in CiNii:1

    • Superconducting Thin Film of (Nd, Ce)<SUB>2</SUB>CuO<SUB>4−<I>y</I></SUB> (1989)
  • Hiratani Masahiko ID: 9000252764598

    Central Research Laboratory, Hitachi, Ltd. (1991 from CiNii)

    Articles in CiNii:1

    • Low-Temperature Annealing Effect on Bi–Sr–Ca–Cu–O Thin Films Prepared by Layer-by-Layer Deposition (1991)
  • Hiratani Masahiko ID: 9000252961268

    Central Research Laboratory, Hitachi, Ltd. (1987 from CiNii)

    Articles in CiNii:1

    • Tetragonal High-<I>T</I><SUB>c</SUB> Superconductor in the System Ba<SUB>2</SUB>Y(Cu<SUB>1−<I>x</I></SUB>Ga<I><SUB>x</SUB></I>)<SUB>3</SUB>O<SUB>7−δ</SUB> (1987)
  • Hiratani Masahiko ID: 9000252970893

    Central Research Laboratory, Hitachi, Ltd. (1989 from CiNii)

    Articles in CiNii:1

    • Annealing of (Nd, Ca)<SUB>2</SUB>CuO<SUB>4</SUB> Compounds under High Oxygen Pressure (1989)
  • Hiratani Masahiko ID: 9000252977440

    Central Research Laboratory, Hitachi, Ltd. (1991 from CiNii)

    Articles in CiNii:1

    • Electrical Characteristics of HoBa<SUB>2</SUB>Cu<SUB>3</SUB>O<SUB>7−<I>x</I></SUB>–La<SUB>1.5</SUB>Ba<SUB>1.5</SUB>Cu<SUB>3</SUB>O<SUB>7−<I>y</I></SUB>–HoBa<SUB>2</SUB>Cu<SUB>3</SUB>O<SUB>7−<I>x</I></SUB> Junctions with Planar-Type Structures (1991)
  • Hiratani Masahiko ID: 9000258124595

    Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185, Japan (1995 from CiNii)

    Articles in CiNii:1

    • Orientation and Crystal Structure of SrTiO3 Thin Films Prepared by Pulsed Laser Deposition. (1995)
  • Hiratani Masahiko ID: 9000258138235

    Central Research Laboratory, Hitachi, Ltd., 1–280 Higashi–koigakubo, Kokubunji–shi, Tokyo 185, Japan (1997 from CiNii)

    Articles in CiNii:1

    • Oxygen Diffusion in Pt Bottom Electrodes of Ferroelectric Capacitors. (1997)
  • Hiratani Masahiko ID: 9000258140502

    Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185, Japan (1998 from CiNii)

    Articles in CiNii:1

    • Interfacial Reaction of SrRuO3 Prepared Directly on TiN. (1998)
  • Hiratani Masahiko ID: 9000258141412

    Central Research Laboratory, Hitachi, Ltd., 1–280 Higashi–koigakubo, Kokubunji–shi, Tokyo 185–0014, Japan (1998 from CiNii)

    Articles in CiNii:1

    • Thermal Stability of Pt Bottom Electrodes for Ferroelectric Capacitors. (1998)
  • Hiratani Masahiko ID: 9000258143278

    Central Research Laboratory, Hitachi, Ltd., 1–280 Higashi–koigakubo, Kokubunji–shi, Tokyo 185, Japan (1998 from CiNii)

    Articles in CiNii:1

    • Effects of Post-Annealing Temperatures and Ambient Atmospheres on the Electrical Properties of Ultrathin (Ba,Sr)TiO3 Capacitors. (1998)
  • Hiratani Masahiko ID: 9000258144008

    Central Research Laboratory, Hitachi, Ltd., 1–280 Higashi–Koigakubo, Kokubunji, Tokyo 185–8601, Japan (1999 from CiNii)

    Articles in CiNii:1

    • Hydrogen Reduction Properties of RuO2 Electrodes. (1999)
  • Hiratani Masahiko ID: 9000258148796

    Central Research Laboratory, Hitachi, Ltd., Tokyo 185-8601, Japan (2000 from CiNii)

    Articles in CiNii:1

    • Thermal Stability of a RuO2 Electrode Prepared by DC Reactive Sputtering. (2000)
  • Hiratani Masahiko ID: 9000258149514

    Central Research Laboratory, Hitachi Ltd., 1-280 Higashi-Koigakubo, Kokubunji, Tokyo 185-8601, Japan (2000 from CiNii)

    Articles in CiNii:1

    • Properties of Ruthenium Films Prepared by Liquid Source Metalorganic Chemical Vapor Deposition Using Ru(EtCp)2 with Tetrahydrofuran Solvent. (2000)
  • Hiratani Masahiko ID: 9000258162912

    Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185-8601, Japan (2002 from CiNii)

    Articles in CiNii:1

    • Effective Electron Mobility Reduced by Remote Charge Scattering in High-.KAPPA. Gate Stacks. (2002)
  • Hiratani Masahiko ID: 9000258164615

    Central Research Laboratory, Hitachi, Ltd., Kokubunji (2003 from CiNii)

    Articles in CiNii:1

    • Inversion Electron Mobility Affected by Phase Separation in High-Permittivity Gate Dielectrics (2003)
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