Search Results1-20 of  8309

  • HIRAYAMA Tetsuya ID: 9000005978982

    East Japan Railway Company (2006 from CiNii)

    Articles in CiNii:5

    • 阪急電鉄の現場における事故防止活動 (1997)
    • ME化配電盤状態監視装置の開発 (1998)
    • SWING-HIJET工法による地盤改良 (2000)
  • HIRAYAMA Tetsuya ID: 9000005978982

    East Japan Railway Company (2006 from CiNii)

    Articles in CiNii:5

    • 阪急電鉄の現場における事故防止活動 (1997)
    • ME化配電盤状態監視装置の開発 (1998)
    • SWING-HIJET工法による地盤改良 (2000)
  • HARAYAMA Tomoko ID: 1000000340505

    Faculty of Science and Engineering, Doshisha University (2019 from CiNii)

    Articles in CiNii:172

    • Improvement of hydrodynamic performances by surface texturing technologies (2005)
    • Influence of Spin on Efficiency of 2K-H Type Traction Drive CVT (2008)
    • Development of Balancing System by 3K Type CVT (2008)
  • HIRAYAMA Yoshiro ID: 9000251872492

    Tohoku Univ.:JST-ERATO:WPI-AIMR Tohoku Univ. (2014 from CiNii)

    Articles in CiNii:31

    • Control of Valley and Spatial Subbands in Double-Gate MOSFETs : Electronic States in a Silicon Quantum Well(Functional Devices and Circuits) (2005)
    • Control of Valley and Spatial Subbands in Double-Gate MOSFETs : Electronic States in a Silicon Quantum Well(Functional Devices and Circuits) (2005)
    • 2006年国際固体素子・材料コンファレンス(SSDM 2006)報告 (2007)
  • HARAYAMA Tomoko ID: 1000000340505

    Faculty of Science and Engineering, Doshisha University (2019 from CiNii)

    Articles in CiNii:172

    • Improvement of hydrodynamic performances by surface texturing technologies (2005)
    • Influence of Spin on Efficiency of 2K-H Type Traction Drive CVT (2008)
    • Development of Balancing System by 3K Type CVT (2008)
  • HARAYAMA Tomoko ID: 1000000340505

    Faculty of Science and Engineering, Doshisha University (2019 from CiNii)

    Articles in CiNii:172

    • Improvement of hydrodynamic performances by surface texturing technologies (2005)
    • Influence of Spin on Efficiency of 2K-H Type Traction Drive CVT (2008)
    • Development of Balancing System by 3K Type CVT (2008)
  • HARAYAMA Tomoko ID: 1000000340505

    Faculty of Science and Engineering, Doshisha University (2019 from CiNii)

    Articles in CiNii:172

    • Improvement of hydrodynamic performances by surface texturing technologies (2005)
    • Influence of Spin on Efficiency of 2K-H Type Traction Drive CVT (2008)
    • Development of Balancing System by 3K Type CVT (2008)
  • HARAYAMA Tomoko ID: 1000000340505

    Faculty of Science and Engineering, Doshisha University (2019 from CiNii)

    Articles in CiNii:172

    • Improvement of hydrodynamic performances by surface texturing technologies (2005)
    • Influence of Spin on Efficiency of 2K-H Type Traction Drive CVT (2008)
    • Development of Balancing System by 3K Type CVT (2008)
  • HIRAYAMA Yoshiro ID: 9000251872492

    Tohoku Univ.:JST-ERATO:WPI-AIMR Tohoku Univ. (2014 from CiNii)

    Articles in CiNii:31

    • Control of Valley and Spatial Subbands in Double-Gate MOSFETs : Electronic States in a Silicon Quantum Well(Functional Devices and Circuits) (2005)
    • Control of Valley and Spatial Subbands in Double-Gate MOSFETs : Electronic States in a Silicon Quantum Well(Functional Devices and Circuits) (2005)
    • 2006年国際固体素子・材料コンファレンス(SSDM 2006)報告 (2007)
  • HIRAYAMA Yoshiro ID: 9000251872492

    Tohoku Univ.:JST-ERATO:WPI-AIMR Tohoku Univ. (2014 from CiNii)

    Articles in CiNii:31

    • Control of Valley and Spatial Subbands in Double-Gate MOSFETs : Electronic States in a Silicon Quantum Well(Functional Devices and Circuits) (2005)
    • Control of Valley and Spatial Subbands in Double-Gate MOSFETs : Electronic States in a Silicon Quantum Well(Functional Devices and Circuits) (2005)
    • 2006年国際固体素子・材料コンファレンス(SSDM 2006)報告 (2007)
  • HIRAYAMA Yoshiro ID: 9000251872492

    Tohoku Univ.:JST-ERATO:WPI-AIMR Tohoku Univ. (2014 from CiNii)

    Articles in CiNii:31

    • Control of Valley and Spatial Subbands in Double-Gate MOSFETs : Electronic States in a Silicon Quantum Well(Functional Devices and Circuits) (2005)
    • Control of Valley and Spatial Subbands in Double-Gate MOSFETs : Electronic States in a Silicon Quantum Well(Functional Devices and Circuits) (2005)
    • 2006年国際固体素子・材料コンファレンス(SSDM 2006)報告 (2007)
  • Hirayama Shigeru ID: 9000237845577

    Articles in CiNii:1

    • スミア法における拭き取り効率の検討 (2002)
  • HIRAYAMA Yoshiro ID: 9000251872492

    Tohoku Univ.:JST-ERATO:WPI-AIMR Tohoku Univ. (2014 from CiNii)

    Articles in CiNii:31

    • Control of Valley and Spatial Subbands in Double-Gate MOSFETs : Electronic States in a Silicon Quantum Well(Functional Devices and Circuits) (2005)
    • Control of Valley and Spatial Subbands in Double-Gate MOSFETs : Electronic States in a Silicon Quantum Well(Functional Devices and Circuits) (2005)
    • 2006年国際固体素子・材料コンファレンス(SSDM 2006)報告 (2007)
  • HIRAYAMA Yoshiro ID: 9000251872492

    Tohoku Univ.:JST-ERATO:WPI-AIMR Tohoku Univ. (2014 from CiNii)

    Articles in CiNii:31

    • Control of Valley and Spatial Subbands in Double-Gate MOSFETs : Electronic States in a Silicon Quantum Well(Functional Devices and Circuits) (2005)
    • Control of Valley and Spatial Subbands in Double-Gate MOSFETs : Electronic States in a Silicon Quantum Well(Functional Devices and Circuits) (2005)
    • 2006年国際固体素子・材料コンファレンス(SSDM 2006)報告 (2007)
  • HIRAYAMA Yoshiro ID: 9000251872492

    Tohoku Univ.:JST-ERATO:WPI-AIMR Tohoku Univ. (2014 from CiNii)

    Articles in CiNii:31

    • Control of Valley and Spatial Subbands in Double-Gate MOSFETs : Electronic States in a Silicon Quantum Well(Functional Devices and Circuits) (2005)
    • Control of Valley and Spatial Subbands in Double-Gate MOSFETs : Electronic States in a Silicon Quantum Well(Functional Devices and Circuits) (2005)
    • 2006年国際固体素子・材料コンファレンス(SSDM 2006)報告 (2007)
  • HIRAYAMA Yoshiro ID: 9000251872492

    Tohoku Univ.:JST-ERATO:WPI-AIMR Tohoku Univ. (2014 from CiNii)

    Articles in CiNii:31

    • Control of Valley and Spatial Subbands in Double-Gate MOSFETs : Electronic States in a Silicon Quantum Well(Functional Devices and Circuits) (2005)
    • Control of Valley and Spatial Subbands in Double-Gate MOSFETs : Electronic States in a Silicon Quantum Well(Functional Devices and Circuits) (2005)
    • 2006年国際固体素子・材料コンファレンス(SSDM 2006)報告 (2007)
  • HIRAYAMA Yoshiro ID: 9000251872492

    Tohoku Univ.:JST-ERATO:WPI-AIMR Tohoku Univ. (2014 from CiNii)

    Articles in CiNii:31

    • Control of Valley and Spatial Subbands in Double-Gate MOSFETs : Electronic States in a Silicon Quantum Well(Functional Devices and Circuits) (2005)
    • Control of Valley and Spatial Subbands in Double-Gate MOSFETs : Electronic States in a Silicon Quantum Well(Functional Devices and Circuits) (2005)
    • 2006年国際固体素子・材料コンファレンス(SSDM 2006)報告 (2007)
  • HIRAYAMA Yoshiro ID: 9000251872492

    Tohoku Univ.:JST-ERATO:WPI-AIMR Tohoku Univ. (2014 from CiNii)

    Articles in CiNii:31

    • Control of Valley and Spatial Subbands in Double-Gate MOSFETs : Electronic States in a Silicon Quantum Well(Functional Devices and Circuits) (2005)
    • Control of Valley and Spatial Subbands in Double-Gate MOSFETs : Electronic States in a Silicon Quantum Well(Functional Devices and Circuits) (2005)
    • 2006年国際固体素子・材料コンファレンス(SSDM 2006)報告 (2007)
  • HIRAYAMA Yoshiro ID: 9000251872492

    Tohoku Univ.:JST-ERATO:WPI-AIMR Tohoku Univ. (2014 from CiNii)

    Articles in CiNii:31

    • Control of Valley and Spatial Subbands in Double-Gate MOSFETs : Electronic States in a Silicon Quantum Well(Functional Devices and Circuits) (2005)
    • Control of Valley and Spatial Subbands in Double-Gate MOSFETs : Electronic States in a Silicon Quantum Well(Functional Devices and Circuits) (2005)
    • 2006年国際固体素子・材料コンファレンス(SSDM 2006)報告 (2007)
  • HIRAYAMA Yoshiro ID: 9000251872492

    Tohoku Univ.:JST-ERATO:WPI-AIMR Tohoku Univ. (2014 from CiNii)

    Articles in CiNii:31

    • Control of Valley and Spatial Subbands in Double-Gate MOSFETs : Electronic States in a Silicon Quantum Well(Functional Devices and Circuits) (2005)
    • Control of Valley and Spatial Subbands in Double-Gate MOSFETs : Electronic States in a Silicon Quantum Well(Functional Devices and Circuits) (2005)
    • 2006年国際固体素子・材料コンファレンス(SSDM 2006)報告 (2007)
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