Search Results1-13 of  13

  • HIROI Masayuki ID: 9000002165515

    Silicon Systems Research Laboratories, NEC Corporation (1999 from CiNii)

    Articles in CiNii:1

    • Measurement of As and B Profiles Implanted into SOI Substrates (1999)
  • HIROI Masayuki ID: 9000004954245

    NEC Electronics Corporation (2004 from CiNii)

    Articles in CiNii:6

    • Evaluation of TaN Films by Power Swing Sputtering for MOCVD-Cu Damascene Interconnects (2000)
    • A pair diffusion model for arsenic in silicon considering with interstitial silicon emission induced by arsenic deactivation (1996)
    • Suppression of Stress Induced Open Failures between Via and Cu Wide Line by Inserting Ti Layer under Ta/TaN Barrier (2003)
  • HIROI Masayuki ID: 9000005560640

    Microelectronics Research Laboratories, NEC Corporation (1994 from CiNii)

    Articles in CiNii:1

    • Temperature Dependence of Etching with Molecular Fluorine on Si(111) Surface (1994)
  • HIROI Masayuki ID: 9000017683492

    NEC Electronics Corporation (2008 from CiNii)

    Articles in CiNii:1

    • Accurate Modeling Method for Cu Interconnect (2008)
  • Hiroi Masayuki ID: 9000025106877

    Articles in CiNii:1

    • Suppression of electromigration early failure of Cu/porous low-k interconnects using dummy metal (2009)
  • Hiroi Masayuki ID: 9000252757764

    Department of Electronic Engineering, The University of Electro-Communications (1983 from CiNii)

    Articles in CiNii:1

    • Formation of MIS Structure in Organic Cell Al/Pb-Phthalocyanine/ITO (1983)
  • Hiroi Masayuki ID: 9000252981585

    Microelectronics Laboratories, NEC Corp. (1992 from CiNii)

    Articles in CiNii:1

    • Selective Epitaxial Growth of Si and Si<SUB>1−<I>x</I></SUB>Ge<I><SUB>x</SUB></I> Films by Ultrahigh-Vacuum Chemical Vapor Deposition Using Si<SUB>2</SUB>H<SUB>6</SUB> and GeH<SUB>4</SUB> (1992)
  • Hiroi Masayuki ID: 9000258121707

    Microelectronics Research Laboratories, NEC Corporation, 34 Miyukigaoka, Tsukuba, Ibaraki 305 (1994 from CiNii)

    Articles in CiNii:1

    • Temperature Dependence of Etching with Molecular Fluorine on Si(111) Surface. (1994)
  • Hiroi Masayuki ID: 9000392690367

    Articles in CiNii:1

    • Formation of MIS Structure in Organic Cell Al/Pb-Phthalocyanine/ITO (1983)
  • Hiroi Masayuki ID: 9000392729652

    Articles in CiNii:1

    • Selective Epitaxial Growth of Si and Si<SUB>1−<I>x</I></SUB>Ge<I><SUB>x</SUB></I> Films by Ultrahigh-Vacuum Chemical Vapor Deposition Using Si<SUB>2</SUB>H<SUB>6</SUB> and GeH<SUB>4</SUB> (1992)
  • Hiroi Masayuki ID: 9000401592888

    Articles in CiNii:1

    • Formation of MIS Structure in Organic Cell Al/Pb-Phthalocyanine/ITO (1983)
  • Hiroi Masayuki ID: 9000401627692

    Articles in CiNii:1

    • Selective Epitaxial Growth of Si and Si1-xGexFilms by Ultrahigh-Vacuum Chemical Vapor Deposition Using Si2H6and GeH4 (1992)
  • Hiroi Masayuki ID: 9000401640865

    Articles in CiNii:1

    • Temperature Dependence of Etching with Molecular Fluorine on Si(111) Surface (1994)
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